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| Feuilles de datas trouvées :: 1351360 | Page: << | 8958 | 8959 | 8960 | 8961 | 8962 | 8963 | 8964 | 8965 | 8966 | 8967 | 8968 | >> |
| Nr. | Nom de partie | Description | Fabricant |
| 358481 | DB3S314K | Schottky Barrier Diodes | Panasonic |
| 358482 | DB3S315E | Schottky Barrier Diodes | Panasonic |
| 358483 | DB3S406F | Schottky Barrier Diodes | Panasonic |
| 358484 | DB3TG | DIAC | ST Microelectronics |
| 358485 | DB3TG | DIAC | SGS Thomson Microelectronics |
| 358486 | DB3TG | Bidirectionnelle Trigger Diodes | Fairchild Semiconductor |
| 358487 | DB3X201K | Schottky Barrier Diodes | Panasonic |
| 358488 | DB3X206K | Schottky Barrier Diodes | Panasonic |
| 358489 | DB3X207K | Schottky Barrier Diodes | Panasonic |
| 358490 | DB3X209K | Schottky Barrier Diodes | Panasonic |
| 358491 | DB3X313F | Schottky Barrier Diodes | Panasonic |
| 358492 | DB3X313J | Schottky Barrier Diodes | Panasonic |
| 358493 | DB3X313K | Schottky Barrier Diodes | Panasonic |
| 358494 | DB3X313N | Schottky Barrier Diodes | Panasonic |
| 358495 | DB3X314F | Schottky Barrier Diodes | Panasonic |
| 358496 | DB3X314J | Schottky Barrier Diodes | Panasonic |
| 358497 | DB3X314K | Schottky Barrier Diodes | Panasonic |
| 358498 | DB3X315E | Schottky Barrier Diodes | Panasonic |
| 358499 | DB3X316F | Schottky Barrier Diodes | Panasonic |
| 358500 | DB3X316J | Schottky Barrier Diodes | Panasonic |
| 358501 | DB3X316K | Schottky Barrier Diodes | Panasonic |
| 358502 | DB3X316N | Schottky Barrier Diodes | Panasonic |
| 358503 | DB3X317K | Schottky Barrier Diodes | Panasonic |
| 358504 | DB3X407K | Schottky Barrier Diodes | Panasonic |
| 358505 | DB3X501K | Schottky Barrier Diodes | Panasonic |
| 358506 | DB3X603K | Schottky Barrier Diodes | Panasonic |
| 358507 | DB3Y313K | Schottky Barrier Diodes | Panasonic |
| 358508 | DB3Y501K | Schottky Barrier Diodes | Panasonic |
| 358509 | DB4 | DIAC | ST Microelectronics |
| 358510 | DB4 | DIAC BIDIRECTIONNEL DE SILICIUM | Chenyi Electronics |
| 358511 | DB4 | DIODES DE DÉCLENCHEMENT | SGS Thomson Microelectronics |
| 358512 | DB4 | CARACTÉRISTIQUES TECHNIQUES DES THYRISTORS BIDIRECTIONNELS DE DIODE (DIACS) | DC Components |
| 358513 | DB4 | Silicium-Déclenchement-Diodes Bidirectionnelles (DIAC) | Diotec Elektronische |
| 358514 | DB4 | DIAC BIDIRECTIONNEL DE SILICIUM | Shanghai Sunrise Electronics |
| 358515 | DB433 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| 358516 | DB434 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| 358517 | DB435 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| 358518 | DB436 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| 358519 | DB437 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| 358520 | DB438 | TRANSISTORS DU SILICIUM EPIBASE DE NPN | Siemens |
| Feuilles de datas trouvées :: 1351360 | Page: << | 8958 | 8959 | 8960 | 8961 | 8962 | 8963 | 8964 | 8965 | 8966 | 8967 | 8968 | >> |
