Nr. | Nom de partie | Description | Fabricant |
47281 | 2N5306 | Transistor de NPN Darlington | Fairchild Semiconductor |
47282 | 2N5306 | Petit Transistor Plombé Darlington De Signal | Central Semiconductor |
47283 | 2N5306 | Planaire épitaxiale de silicium passivé transistor NPN Darlington. 25V, 300mA. | General Electric Solid State |
47284 | 2N5306A | TRANSISTORS DU SILICIUM DARLINGTON | General Electric Solid State |
47285 | 2N5306A | TRANSISTORS DU SILICIUM DARLINGTON | General Electric Solid State |
47286 | 2N5306_D74Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47287 | 2N5307 | Amplificateur D'Usage universel de NPN | Fairchild Semiconductor |
47288 | 2N5307 | AMPLIFICATEUR DE NPN DARLINGTON | Micro Electronics |
47289 | 2N5307 | Planaire épitaxiale de silicium passivé transistor NPN Darlington. 40V, 300mA. | General Electric Solid State |
47290 | 2N5307_D74Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47291 | 2N5308 | Transistor de NPN Darlington | Fairchild Semiconductor |
47292 | 2N5308 | AMPLIFICATEUR DE NPN DARLINGTON | Micro Electronics |
47293 | 2N5308 | Petit Transistor Plombé Darlington De Signal | Central Semiconductor |
47294 | 2N5308 | Planaire épitaxiale de silicium passivé transistor NPN Darlington. 40V, 300mA. | General Electric Solid State |
47295 | 2N5308A | Planaire épitaxiale de silicium passivé transistor NPN Darlington. 40V, 300mA. | General Electric Solid State |
47296 | 2N5308_D26Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47297 | 2N5308_D27Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47298 | 2N5308_D74Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47299 | 2N5308_D75Z | Transistor de NPN Darlington | Fairchild Semiconductor |
47300 | 2N5320 | PETIT TRANSISTOR DU SIGNAL NPN | ST Microelectronics |
47301 | 2N5320 | PETITS TRANSISTORS DU SIGNAL NPN | SGS Thomson Microelectronics |
47302 | 2N5320 | TRANSISTORS DE COMMUTATION (SILICIUM DE NPN) | Boca Semiconductor Corporation |
47303 | 2N5320 | Petit Usage universel Plombé De Transistor De Signal | Central Semiconductor |
47304 | 2N5320 | Puissance De Silicium De Npn-pnp De 10 Watts | Fairchild Semiconductor |
47305 | 2N5320 | 10.000W NPN Transistor métal Can. 75V VCEO, 2.000A Ic, 30-130 hFE. | Continental Device India Limited |
47306 | 2N5320 | Transistor de puissance NPN au silicium à usage général. | General Electric Solid State |
47307 | 2N5321 | PETITS TRANSISTORS DU SIGNAL NPN | SGS Thomson Microelectronics |
47308 | 2N5321 | TRANSISTORS DE COMMUTATION (SILICIUM DE NPN) | Boca Semiconductor Corporation |
47309 | 2N5321 | Petit Usage universel Plombé De Transistor De Signal | Central Semiconductor |
47310 | 2N5321 | Puissance De Silicium De Npn-pnp De 10 Watts | Fairchild Semiconductor |
47311 | 2N5321 | PETITS TRANSISTORS DU SIGNAL NPN | ST Microelectronics |
47312 | 2N5321 | 10.000W NPN Transistor métal Can. 50V VCEO, 2.000A Ic, 40 - 250 hFE. | Continental Device India Limited |
47313 | 2N5321 | Transistor de puissance NPN au silicium à usage général. | General Electric Solid State |
47314 | 2N5322 | PETIT TRANSISTOR DU SIGNAL PNP | ST Microelectronics |
47315 | 2N5322 | PETITS TRANSISTORS DU SIGNAL PNP | SGS Thomson Microelectronics |
47316 | 2N5322 | TRANSISTORS DE COMMUTATION (SILICIUM DE PNP) | Boca Semiconductor Corporation |
47317 | 2N5322 | COMMUTATEURS MOYENS À GRANDE VITESSE DE TENSION | SemeLAB |
47318 | 2N5322 | Petit Usage universel Plombé De Transistor De Signal | Central Semiconductor |
47319 | 2N5322 | Puissance De Silicium De Npn-pnp De 10 Watts | Fairchild Semiconductor |
47320 | 2N5322 | Transistor de puissance PNP de silicium à usage général. | General Electric Solid State |
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