| Nr. | Nom de partie | Description | Fabricant |
| 498601 | HM5117805S-5 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498602 | HM5117805S-6 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498603 | HM5117805S-7 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498604 | HM5117805TS-5 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498605 | HM5117805TS-6 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498606 | HM5117805TS-7 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498607 | HM5117805TT-5 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498608 | HM5117805TT-6 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498609 | HM5117805TT-7 | 16 la DRACHME de M EDO (2-Mword X de 8 bits) 2 k régénèrent | Elpida Memory |
| 498610 | HM51258P | 262144 mot X 1 DRACHME statique de la colonne CMOS de bit | Hitachi Semiconductor |
| 498611 | HM514100DLS-6 | 4.194.304 mots x 1 bit RAM dynamique, 60ns | Hitachi Semiconductor |
| 498612 | HM514100DLS-7 | 4.194.304 mots x 1 bit RAM dynamique, 70ns | Hitachi Semiconductor |
| 498613 | HM514100DLS-8 | 4.194.304 mots x 1 bit RAM dynamique, 80ns | Hitachi Semiconductor |
| 498614 | HM514100DS-6 | 4.194.304 mots x 1 bit RAM dynamique, 60ns | Hitachi Semiconductor |
| 498615 | HM514100DS-7 | 4.194.304 mots x 1 bit RAM dynamique, 70ns | Hitachi Semiconductor |
| 498616 | HM514100DS-8 | 4.194.304 mots x 1 bit RAM dynamique, 80ns | Hitachi Semiconductor |
| 498617 | HM514258AJP-10 | 100 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498618 | HM514258AJP-12 | 120ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498619 | HM514258AJP-6 | 60ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498620 | HM514258AJP-7 | 70ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498621 | HM514258AJP-8 | 80 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498622 | HM514258AP-10 | 100 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498623 | HM514258AP-12 | 120ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498624 | HM514258AP-6 | 60ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498625 | HM514258AP-7 | 70ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498626 | HM514258AP-8 | 80 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498627 | HM514258AZP-10 | 100 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498628 | HM514258AZP-12 | 120ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498629 | HM514258AZP-6 | 60ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498630 | HM514258AZP-7 | 70ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498631 | HM514258AZP-8 | 80 ns; V (cc / t): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mots x 4 bits CMOS RAM dynamique | Hitachi Semiconductor |
| 498632 | HM514260AJ-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits Dynamia mémoire vive | Hitachi Semiconductor |
| 498633 | HM514260AJ-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits Dynamin mémoire vive | Hitachi Semiconductor |
| 498634 | HM514260AJ-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamique mémoire vive | Hitachi Semiconductor |
| 498635 | HM514260ALJ-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiò mémoire vive | Hitachi Semiconductor |
| 498636 | HM514260ALJ-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits Dynamia mémoire vive | Hitachi Semiconductor |
| 498637 | HM514260ALJ-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÔ mémoire vive | Hitachi Semiconductor |
| 498638 | HM514260ALRR-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamique mémoire vive | Hitachi Semiconductor |
| 498639 | HM514260ALRR-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÔ mémoire vive | Hitachi Semiconductor |
| 498640 | HM514260ALRR-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits Dynamia mémoire vive | Hitachi Semiconductor |
| | | |
