| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTH12N50E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 2 |
MTD2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 3 |
MTD2N50E |
OBSOLETE - Power MOSFET 2 Amps, 500 Volts |
ON Semiconductor |
| 4 |
MTD2N50E-D |
Power MOSFET 2 Amps, 500 Volts N-Channel DPAK |
ON Semiconductor |
| 5 |
MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 6 |
PHB2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 7 |
PHD2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 8 |
PHP2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 9 |
PHU2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 10 |
PHX2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| | | |
