Nr. | Teilname | Beschreibung | Hersteller |
251 | 2N6345A | 12-A Silizium Triac. 800 V. | General Electric Solid State |
252 | 2N6346A | 12-A Silizium Triac. 200 V. | General Electric Solid State |
253 | 2N6347A | 12-A Silizium Triac. 400 V. | General Electric Solid State |
254 | 2N6348A | 12-A Silizium Triac. 600 V. | General Electric Solid State |
255 | 2N6349A | 12-A Silizium Triac. 800 V. | General Electric Solid State |
256 | 2N6354 | 120V, 10A, 140W Silizium NPN Planartransistor. | General Electric Solid State |
257 | 2N6371 | High-Power-Silizium NPN-Transistor. 50V, 117W. | General Electric Solid State |
258 | 2N6383 | 10 A NPN Darlington-Leistungstransistor. 40 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
259 | 2N6384 | 10 A NPN Darlington-Leistungstransistor. 60 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
260 | 2N6385 | 10 A NPN Darlington-Leistungstransistor. 80 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
261 | 2N6386 | 10 A NPN Darlington-Leistungstransistor. 40 V. 65 W. Gewinn von 1000 bei 3 A. | General Electric Solid State |
262 | 2N6387 | 10 A NPN Darlington-Leistungstransistor. 60 V. 65 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
263 | 2N6388 | 10 A NPN Darlington-Leistungstransistor. 80 V. 65 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
264 | 2N6394 | 12A gesteuerte Siliziumgleichrichter. Vrsom 75V. | General Electric Solid State |
265 | 2N6395 | 12A gesteuerte Siliziumgleichrichter. Vrsom 125V. | General Electric Solid State |
266 | 2N6396 | 12A gesteuerte Siliziumgleichrichter. Vrsom 250V. | General Electric Solid State |
267 | 2N6397 | 12A gesteuerte Siliziumgleichrichter. Vrsom 450V. | General Electric Solid State |
268 | 2N6398 | 12A gesteuerte Siliziumgleichrichter. Vrsom 650V. | General Electric Solid State |
269 | 2N6400 | 16A gesteuerte Siliziumgleichrichter. Vrsom 75V. | General Electric Solid State |
270 | 2N6401 | 16A gesteuerte Siliziumgleichrichter. Vrsom 125V. | General Electric Solid State |
271 | 2N6402 | 16A gesteuerte Siliziumgleichrichter. Vrsom 250V. | General Electric Solid State |
272 | 2N6403 | 16A gesteuerte Siliziumgleichrichter. Vrsom 450V. | General Electric Solid State |
273 | 2N6404 | 16A gesteuerte Siliziumgleichrichter. Vrsom 650V. | General Electric Solid State |
274 | 2N6420 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
275 | 2N6421 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
276 | 2N6422 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
277 | 2N6423 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
278 | 2N6467 | Silikon PNP Medium-Power-Transistor. -110V, 40W. | General Electric Solid State |
279 | 2N6468 | Silikon PNP Medium-Power-Transistor. -130V, 40W. | General Electric Solid State |
280 | 2N6469 | Epitaxial-Basis, Silizium PNP Hochleistungstransistor. -50 V, 125W. | General Electric Solid State |
281 | 2N6473 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 110V. | General Electric Solid State |
282 | 2N6474 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 130V. | General Electric Solid State |
283 | 2N6475 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -110V. | General Electric Solid State |
284 | 2N6476 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -130V. | General Electric Solid State |
285 | 2N6477 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
286 | 2N6477 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
287 | 2N6478 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
288 | 2N6478 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
289 | 2N6486 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 50V. | General Electric Solid State |
290 | 2N6487 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 70V. | General Electric Solid State |
291 | 2N6488 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 90V. | General Electric Solid State |
292 | 2N6489 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -50 V. | General Electric Solid State |
293 | 2N6490 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -70V. | General Electric Solid State |
294 | 2N6491 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -90V. | General Electric Solid State |
295 | 2N6496 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit Silizium NPN Planartransistor. | General Electric Solid State |
296 | 2N6500 | EPITAXIAL- PLANARE SCHNELLTRANSISTOREN DES KOLLEKTOR-SILIKON-NPN | General Electric Solid State |
297 | 2N6500 | EPITAXIAL- PLANARE SCHNELLTRANSISTOREN DES KOLLEKTOR-SILIKON-NPN | General Electric Solid State |
298 | 2N6530 | 8 A NPN Darlington-Leistungstransistor. 80 V. 60 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
299 | 2N6531 | 8 A NPN Darlington-Leistungstransistor. 100 V. 60 W. Gewinn von 500 bei 3 A. | General Electric Solid State |
300 | 2N6532 | 8 A NPN Darlington-Leistungstransistor. 100 V. 60 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
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