| 5711 | HL6333MG | (HL6334MG) Niedrige Betriebsstrom-Sichtbare Laser Diode | Hitachi Semiconductor |
| 5712 | HL6334MG | Niedrige Betriebsstrom-Sichtbare Laser Diode | Hitachi Semiconductor |
| 5713 | HL6335G | (HL6336G) Kreisförmiger Lichtstrahl-Niedriger Betriebsstrom | Hitachi Semiconductor |
| 5714 | HL6336G | Kreisförmiger Lichtstrahl-Niedriger Betriebsstrom | Hitachi Semiconductor |
| 5715 | HL6339G | (HL6342G) 633nm Lasing Laser Diode | Hitachi Semiconductor |
| 5716 | HL6342G | 633nm Lasing Laser Diode | Hitachi Semiconductor |
| 5717 | HL6503MG | Sichtbare hohe Energie Laser Diode für DVD-RAM | Hitachi Semiconductor |
| 5718 | HL6714G | AlGaInP Laser Diode | Hitachi Semiconductor |
| 5719 | HL6724MG | Das HL6724MG ist eine 0.67?m Band AlGaInP Laser Diode mit einerStruktur des Multi-quantumbrunnens (MQW). | Hitachi Semiconductor |
| 5720 | HL6738MG | Sichtbare Hohe Energie Laser Diode | Hitachi Semiconductor |
| 5721 | HL7851G | GaAlAs Laser Diode | Hitachi Semiconductor |
| 5722 | HL7859MG | Sichtbare Hohe Energie Laser Diode | Hitachi Semiconductor |
| 5723 | HL8325G | GaAlAs Laser Diode | Hitachi Semiconductor |
| 5724 | HM10500-15 | +0,5 Bis -7.0V; 15ns; 262.144 Wörtern x 1 Bit vollständig decodiert Direktzugriffsspeicher. Für Hochgeschwindigkeitssysteme wie Hauptspeicher für Supercomputer | Hitachi Semiconductor |
| 5725 | HM48416AP | 16384 Wort x 4 Bit dynamisches RAM | Hitachi Semiconductor |
| 5726 | HM5112805F-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5727 | HM5112805FLTD-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5728 | HM5112805FTD-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5729 | HM5113805F-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5730 | HM5113805FLTD-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5731 | HM5113805FTD-6 | der 128M EDODRAM (16-Mwo. x 8-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 5732 | HM5116100 | 16M FP DER DRAM (16-Mwo. x 1-bit) 4k erneuern | Hitachi Semiconductor |
| 5733 | HM5116100S | 16M FP DER DRAM (16-Mwo. x 1-bit) 4k erneuern | Hitachi Semiconductor |
| 5734 | HM5116100S-6 | 16M FP DER DRAM (16-Mwo. x 1-bit) 4k erneuern | Hitachi Semiconductor |
| 5735 | HM5116100S-7 | 16M FP DER DRAM (16-Mwo. x 1-bit) 4k erneuern | Hitachi Semiconductor |
| 5736 | HM51258P | 262144 Wort x 1 Bit-statischer Spalte CMOS DRAM | Hitachi Semiconductor |
| 5737 | HM514100DLS-6 | 4.194.304-Wort x 1-Bit dynamischen RAM, 60ns | Hitachi Semiconductor |
| 5738 | HM514100DLS-7 | 4.194.304-Wort x 1-Bit dynamischen RAM, 70 ns | Hitachi Semiconductor |
| 5739 | HM514100DLS-8 | 4.194.304-Wort x 1-Bit dynamischen RAM, 80ns | Hitachi Semiconductor |
| 5740 | HM514100DS-6 | 4.194.304-Wort x 1-Bit dynamischen RAM, 60ns | Hitachi Semiconductor |
| 5741 | HM514100DS-7 | 4.194.304-Wort x 1-Bit dynamischen RAM, 70 ns | Hitachi Semiconductor |
| 5742 | HM514100DS-8 | 4.194.304-Wort x 1-Bit dynamischen RAM, 80ns | Hitachi Semiconductor |
| 5743 | HM514258AJP-10 | 100 ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5744 | HM514258AJP-12 | 120ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5745 | HM514258AJP-6 | 60ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5746 | HM514258AJP-7 | 70ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5747 | HM514258AJP-8 | 80ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5748 | HM514258AP-10 | 100 ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5749 | HM514258AP-12 | 120ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5750 | HM514258AP-6 | 60ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5751 | HM514258AP-7 | 70ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5752 | HM514258AP-8 | 80ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5753 | HM514258AZP-10 | 100 ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5754 | HM514258AZP-12 | 120ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5755 | HM514258AZP-6 | 60ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5756 | HM514258AZP-7 | 70ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5757 | HM514258AZP-8 | 80ns; V (cc / t): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 4-Bit CMOS dynamischen RAM | Hitachi Semiconductor |
| 5758 | HM514260AJ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiã Random Access Memory | Hitachi Semiconductor |
| 5759 | HM514260AJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit-Dynamin-Lese-Speicher | Hitachi Semiconductor |
| 5760 | HM514260AJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144 Wörtern x 16 Bit Dynamic Random Access Memory | Hitachi Semiconductor |
| 5761 | HM514260ALJ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiò Random Access Memory | Hitachi Semiconductor |
| 5762 | HM514260ALJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiã Random Access Memory | Hitachi Semiconductor |
| 5763 | HM514260ALJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÔ Random Access Memory | Hitachi Semiconductor |
| 5764 | HM514260ALRR-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144 Wörtern x 16 Bit Dynamic Random Access Memory | Hitachi Semiconductor |
| 5765 | HM514260ALRR-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÔ Random Access Memory | Hitachi Semiconductor |
| 5766 | HM514260ALRR-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiã Random Access Memory | Hitachi Semiconductor |
| 5767 | HM514260ALTT-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit-Dynamin-Lese-Speicher | Hitachi Semiconductor |
| 5768 | HM514260ALTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5769 | HM514260ALTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÓ Random Access Memory | Hitachi Semiconductor |
| 5770 | HM514260ALZ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÎ Random Access Memory | Hitachi Semiconductor |
| 5771 | HM514260ALZ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5772 | HM514260ALZ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamií Random Access Memory | Hitachi Semiconductor |
| 5773 | HM514260ARR-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÓ Random Access Memory | Hitachi Semiconductor |
| 5774 | HM514260ARR-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144 Wörtern x 16 Bit Dynamic Random Access Memory | Hitachi Semiconductor |
| 5775 | HM514260ARR-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit-Dynamin-Lese-Speicher | Hitachi Semiconductor |
| 5776 | HM514260ATT-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5777 | HM514260ATT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamií Random Access Memory | Hitachi Semiconductor |
| 5778 | HM514260ATT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5779 | HM514260AZ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÔ Random Access Memory | Hitachi Semiconductor |
| 5780 | HM514260AZ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÎ Random Access Memory | Hitachi Semiconductor |
| 5781 | HM514260AZ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiò Random Access Memory | Hitachi Semiconductor |
| 5782 | HM514260CJ-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiò Random Access Memory | Hitachi Semiconductor |
| 5783 | HM514260CJ-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit Dynamid Random Access Memory | Hitachi Semiconductor |
| 5784 | HM514260CJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiï Random Access Memory | Hitachi Semiconductor |
| 5785 | HM514260CJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÎ Random Access Memory | Hitachi Semiconductor |
| 5786 | HM514260CLJ-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5787 | HM514260CLJ-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5788 | HM514260CLJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÌ Random Access Memory | Hitachi Semiconductor |
| 5789 | HM514260CLJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamií Random Access Memory | Hitachi Semiconductor |
| 5790 | HM514260CLTT-6 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit-Dynamin-Lese-Speicher | Hitachi Semiconductor |
| 5791 | HM514260CLTT-6R | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÓ Random Access Memory | Hitachi Semiconductor |
| 5792 | HM514260CLTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiõ Random Access Memory | Hitachi Semiconductor |
| 5793 | HM514260CLTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 5794 | HM514260CTT-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiã Random Access Memory | Hitachi Semiconductor |
| 5795 | HM514260CTT-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÖ Random Access Memory | Hitachi Semiconductor |
| 5796 | HM514260CTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiæ Random Access Memory | Hitachi Semiconductor |
| 5797 | HM514260CTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÔ Random Access Memory | Hitachi Semiconductor |
| 5798 | HM514260DJI-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiß Random Access Memory | Hitachi Semiconductor |
| 5799 | HM514260DJI-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiú Random Access Memory | Hitachi Semiconductor |
| 5800 | HM514260DLJI-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiã Random Access Memory | Hitachi Semiconductor |
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