Nr. | Teilname | Beschreibung | Hersteller |
1021361 | PSMN020-30MLC | N-Kanal 30 V 18,1 mOhm Logikpegel MOSFET in LFPAK33 mit TrenchMOS Technologie | NXP Semiconductors |
1021362 | PSMN022-30BL | N-Kanal 30 V 22,6 mOhm Logikpegel MOSFET in D2PAK | NXP Semiconductors |
1021363 | PSMN022-30PL | N-Kanal 30 V 22 mOhm Logikpegel-MOSFET | NXP Semiconductors |
1021364 | PSMN023-40YLC | N-Kanal-40-V-Logikpegel 23mO MOSFET in LFPAK mit Nextpower-Technologie | NXP Semiconductors |
1021365 | PSMN023-80LS | N-Kanal-DFN3333-8-80 V 23 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021366 | PSMN025-100D | N-Führung TrenchMOS(tm) Transistor | Philips |
1021367 | PSMN025-100D | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021368 | PSMN026-80YS | N-Kanal-LFPAK 80 V 27,5 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021369 | PSMN027-100BS | N-Kanal-100V 26,8 mOhm Standardniveau MOSFET in D2PAK. | NXP Semiconductors |
1021370 | PSMN027-100PS | N-Kanal-100V 26,8 mOhm Standardniveau MOSFET im TO220. | NXP Semiconductors |
1021371 | PSMN027-100XS | N-Kanal-100V 26,8 mOhm Standardniveau MOSFET in TO220F (SOT186A) | NXP Semiconductors |
1021372 | PSMN028-100YS | N-Kanal-LFPAK 100V 27,5 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021373 | PSMN030-150B | N-Führung TrenchMOS(tm) Transistor | Philips |
1021374 | PSMN030-150B | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021375 | PSMN030-150P | N-Führung TrenchMOS(tm) Transistor | Philips |
1021376 | PSMN030-150P | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021377 | PSMN030-60YS | N-Kanal-LFPAK 60 V 24,7 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021378 | PSMN034-100BS | N-Kanal 100 V 34,5 mOhm Standardniveau MOSFET in D2PAK. | NXP Semiconductors |
1021379 | PSMN034-100PS | N-Kanal 100 V 34,5 mOhm Standardniveau MOSFET im TO220. | NXP Semiconductors |
1021380 | PSMN035-100LS | N-Kanal-DFN3333-8-100 V 32 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021381 | PSMN035-150B | Transistor des N-Führung Verbesserung Modus fangen-effect | Philips |
1021382 | PSMN035-150B | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021383 | PSMN035-150P | Transistor des N-Führung Verbesserung Modus fangen-effect | Philips |
1021384 | PSMN035-150P | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021385 | PSMN038 | Transistor des N-Führung Verbesserung Modus fangen-effect | Philips |
1021386 | PSMN038-100K | Transistor des N-Führung Verbesserung Modus fangen-effect | Philips |
1021387 | PSMN038-100K | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021388 | PSMN038-100YL | N-Kanal 100 V 37,5 mOhm Logikpegel MOSFET in LFPAK56 | NXP Semiconductors |
1021389 | PSMN039-100YS | N-Kanal-LFPAK 100 V 39,5 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021390 | PSMN040-100MSE | N-Kanal 100 V 36,6 mOhm Standardniveau MOSFET in LFPAK33 speziell für High-Power PoE-Anwendungen entwickelt | NXP Semiconductors |
1021391 | PSMN040-200W | N-Führung TrenchMOS(tm) Transistor | Philips |
1021392 | PSMN041-80YL | N-Kanal 80 V 41 mOhm Logikpegel MOSFET in LFPAK56 | NXP Semiconductors |
1021393 | PSMN045-80YS | N-Kanal-LFPAK 80 V 45 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021394 | PSMN050-80BS | N-Kanal 80 V 46 mOhm Standardniveau MOSFET in D2PAK | NXP Semiconductors |
1021395 | PSMN050-80PS | N-Kanal 80 V 46 mOhm Standardniveau MOSFET | NXP Semiconductors |
1021396 | PSMN057-200B | N-Führung TrenchMOS(tm) Transistor | Philips |
1021397 | PSMN057-200B | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021398 | PSMN057-200P | N-Führung TrenchMOS(tm) Transistor | Philips |
1021399 | PSMN057-200P | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
1021400 | PSMN059-150Y | N-Kanal-TrenchMOS SiliconMAX Standard-Niveau FET | NXP Semiconductors |
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