| Nr. | Teilname | Beschreibung | Hersteller |
| 1164241 | STD3PS25-1 | P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164242 | STD3PS25T4 | P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164243 | STD40NE03L | N-CHANNEL 30V - 0.012 OHM - 40A TO-252 STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164244 | STD40NE03L | N - FÜHRUNG 30V - 0.012 Ohm - 40A TO-252 STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1164245 | STD40NF02L | N-CHANNEL 20V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164246 | STD40NF02L | N-CHANNEL 20V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1164247 | STD40NF02L | N-CHANNEL 20V - 0.01 Ohm - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1164248 | STD40NF03L | N-CHANNEL 30V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164249 | STD40NF03L | N-CHANNEL 30V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1164250 | STD40NF03L | N - FÜHRUNG 30V - 0.012 Ohm - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1164251 | STD40NF03LT4 | N-CHANNEL 30V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164252 | STD40NF06 | N-CHANNEL 60V - 0.024 OHM - 40A DPAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1164253 | STD40NF06LZ | N-CHANNEL 60V - 0.020 OHM - 40A DPAK ZENER-PROTECTED STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1164254 | STD40NF06LZ | N-CHANNEL 60V - 0.020 OHM - 40A DPAK ZENER-PROTECTED STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1164255 | STD40NF06LZT4 | N-CHANNEL 60V - 0.020 OHM - 40A DPAK ZENER-PROTECTED STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1164256 | STD40NF06T4 | N-CHANNEL 60V - 0.024 OHM - 40A DPAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1164257 | STD40NF10 | N-Kanal 100 V, 0.025 Ohm, 50 A DPAK niedrige Gate-Ladung STripFET (TM) II Power MOSFET | ST Microelectronics |
| 1164258 | STD40NF3LL | N-CHANNEL 30V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164259 | STD40NF3LL | N-CHANNEL 30V - 0.0095 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1164260 | STD40NF3LL | N-CHANNEL 30V - 0.0095 Ohm - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STripFET ] ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1164261 | STD40NF3LLT4 | N-CHANNEL 30V - 0.009 OHM - 40A DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1164262 | STD44N4LF6 | N-Kanal-40 V, 8,9 mOhm, 44 A, DPAK STripFET (TM) VI DeepGATE (TM) Power MOSFET | ST Microelectronics |
| 1164263 | STD45N10F7 | N-Kanal 100 V, 0.013 Ohm typ. 45 A STripFET (TM) VII DeepGATE (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164264 | STD45NF03L | N-CHANNEL 30V - 0.011 OHM - 45A DPAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1164265 | STD45NF03L | N - FÜHRUNG 30V - 0.011 Ohm - 45A DPAK STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1164266 | STD45NF75 | N-CHANNEL 75V - ENERGIE MOSFET 0.018 OHM--40A DPAK STRIPFET II | ST Microelectronics |
| 1164267 | STD45NF75T4 | N-CHANNEL 75V - ENERGIE MOSFET 0.018 OHM--40A DPAK STRIPFET II | ST Microelectronics |
| 1164268 | STD4A60S | Empfindliche Gatter-TRIAC | SemiWell Semiconductor |
| 1164269 | STD4A60S | Empfindliche Gatter-TRIAC | SemiWell Semiconductor |
| 1164270 | STD4A60S | Empfindliche Gatter-TRIAC | SemiWell Semiconductor |
| 1164271 | STD4N20 | N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164272 | STD4N20-1 | N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164273 | STD4N25 | N - FÜHRUNG VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOREN | SGS Thomson Microelectronics |
| 1164274 | STD4N25-1 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOREN | ST Microelectronics |
| 1164275 | STD4N25-1 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOREN | SGS Thomson Microelectronics |
| 1164276 | STD4N52K3 | N-Kanal 525 V, 2,5 A, 2,1 Ohm typ., SuperMESH3 (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164277 | STD4N62K3 | N-Kanal 620 V, 1,7 Ohm typ. 3,8 A, SuperMESH3 (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164278 | STD4N80K5 | N-Kanal 800 V, 2,1 Ohm typ. 3 A Zener-geschützt SuperMESH (TM) 5 Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164279 | STD4NA40 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1164280 | STD4NA40-1 | N-CHANNEL VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | ST Microelectronics |
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