| Nr. | Teilname | Beschreibung | Hersteller |
| 250881 | BC560B | PNP SILIKON-TRANSISTOREN | Siemens |
| 250882 | BC560BBU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250883 | BC560BRL1 | Low Noise Transistor PNP | ON Semiconductor |
| 250884 | BC560BTA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250885 | BC560BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250886 | BC560C | Niedrige Geräusch-Transistoren | Motorola |
| 250887 | BC560C | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250888 | BC560C | Transistor-Silikon-Plastik PNP | ON Semiconductor |
| 250889 | BC560C | 50 V, 100 mA, PNP Silikon-Transistor | Siemens |
| 250890 | BC560CBU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250891 | BC560CTA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250892 | BC560CTAR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250893 | BC560CZL1 | Transistor-Silikon-Plastik PNP | ON Semiconductor |
| 250894 | BC56PA | 80 V, 1 A NPN-Transistor mittlerer Leistung | NXP Semiconductors |
| 250895 | BC587BS | DOPPELPNP OBERFLÄCHE EINFASSUNG KLEINER SIGNAL-TRANSISTOR | Diodes |
| 250896 | BC617 | NPN Silikon Darlington Transistor | Infineon |
| 250897 | BC617 | NPN Silikon Darlington Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250898 | BC618 | NPN Darlington Transistor | Philips |
| 250899 | BC618 | NPN Silikon Darlington Transistor | Infineon |
| 250900 | BC618 | NPN Silikon Darlington Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250901 | BC618 | Darlington Transistoren | Motorola |
| 250902 | BC618 | Silikon-Plastiktransistor | ON Semiconductor |
| 250903 | BC618-D | Silikon Der Darlington Transistor-NPN | ON Semiconductor |
| 250904 | BC618RL | Darlington Transistor NPN | ON Semiconductor |
| 250905 | BC618RL1 | Silikon-Plastiktransistor | ON Semiconductor |
| 250906 | BC618ZL1 | Darlington Transistor NPN | ON Semiconductor |
| 250907 | BC627 | Tranzystor ma.ej cz?otliwo.ci ma.ej mocy | Ultra CEMI |
| 250908 | BC628 | Tranzystor ma.ej cz?otliwo.ci ma.ej mocy | Ultra CEMI |
| 250909 | BC635 | NPN mittlere Energie Transistoren | Philips |
| 250910 | BC635 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250911 | BC635 | KLEINER TRANSISTOR DES SIGNAL-NPN | ST Microelectronics |
| 250912 | BC635 | NPN Silikon Af Transistor | Infineon |
| 250913 | BC635 | SILIKON-TRANSISTOREN | Micro Electronics |
| 250914 | BC635 | NPN Silikon AF Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250915 | BC635 | Hohe Gegenwärtige Transistoren | Motorola |
| 250916 | BC635 | Hoher Gegenwärtiger Transistor | ON Semiconductor |
| 250917 | BC635 | 0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 40-250 hFE | Continental Device India Limited |
| 250918 | BC635 | KLEINE SIGNAL NPN-Transistor | SGS Thomson Microelectronics |
| 250919 | BC635 | Transistor. Schalt- und Verstärkeranwendungen. Vcer = 45V, Vces = 45V, Vceo = 45V, Vebo = 5V, Pc = 1W, Ic = 1A. | USHA India LTD |
| 250920 | BC635-10 | 0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE | Continental Device India Limited |
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