| Nr. | Teilname | Beschreibung | Hersteller |
| 250921 | BC635-10 | NPN mittleren Leistungstransistoren | Philips |
| 250922 | BC635-16 | NPN mittlere Energie Transistoren | Philips |
| 250923 | BC635-16 | 0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 100-250 hFE | Continental Device India Limited |
| 250924 | BC635-AP | KLEINER TRANSISTOR DES SIGNAL-NPN | ST Microelectronics |
| 250925 | BC635-AP | KLEINE SIGNAL NPN-Transistor | SGS Thomson Microelectronics |
| 250926 | BC635-D | Hohes Gegenwärtiges Silikon Der Transistor-NPN | ON Semiconductor |
| 250927 | BC635RL1 | Hoher Gegenwärtiger Transistor | ON Semiconductor |
| 250928 | BC635ZL1 | Hoher Gegenwärtiger Transistor | ON Semiconductor |
| 250929 | BC635_D26Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250930 | BC635_D27Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250931 | BC635_D75Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250932 | BC635_L34Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250933 | BC636 | PNP mittlere Energie Transistoren | Philips |
| 250934 | BC636 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250935 | BC636 | KLEINER TRANSISTOR DES SIGNAL-PNP | ST Microelectronics |
| 250936 | BC636 | PNP Silikon Af Transistor | Infineon |
| 250937 | BC636 | SILIKON-TRANSISTOREN | Micro Electronics |
| 250938 | BC636 | PNP Silikon AF Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250939 | BC636 | Hohe Gegenwärtige Transistoren | Motorola |
| 250940 | BC636 | Hohes Gegenwärtiges Transistors(PNP Silikon) | ON Semiconductor |
| 250941 | BC636 | 0.800W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 40-250 hFE | Continental Device India Limited |
| 250942 | BC636 | KLEINE SIGNAL-PNP-Transistor | SGS Thomson Microelectronics |
| 250943 | BC636 | Transistor. Schalt- und Verstärkeranwendungen. Vcer = -45V, Vces = -45V, Vceo = -45V, Vebo = -5V, Pc = 1W, Ic = -1A. | USHA India LTD |
| 250944 | BC636-10 | PNP mittlere Energie Transistoren | Philips |
| 250945 | BC636-10 | 0.800W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE | Continental Device India Limited |
| 250946 | BC636-16 | PNP mittlere Energie Transistoren | Philips |
| 250947 | BC636-16ZL1 | Hohe Gegenwärtige Transistoren | ON Semiconductor |
| 250948 | BC636-16ZL1 | Hohe Gegenwärtige Transistoren | ON Semiconductor |
| 250949 | BC636-AP | KLEINER TRANSISTOR DES SIGNAL-PNP | ST Microelectronics |
| 250950 | BC636-AP | KLEINE SIGNAL-PNP-Transistor | SGS Thomson Microelectronics |
| 250951 | BC636-D | Hohes Gegenwärtiges Silikon Der Transistor-PNP | ON Semiconductor |
| 250952 | BC636BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250953 | BC636TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250954 | BC636TAR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250955 | BC636TF | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250956 | BC636TFR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250957 | BC636ZL1 | Hohe Gegenwärtige Transistoren | ON Semiconductor |
| 250958 | BC636ZL1 | Hohe Gegenwärtige Transistoren | ON Semiconductor |
| 250959 | BC637 | NPN mittlere Energie Transistoren | Philips |
| 250960 | BC637 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
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