| Nr. | Teilname | Beschreibung | Hersteller |
| 251041 | BC640_J61Z | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 251042 | BC646BDW1T1 | Universelles Verdoppelungtransistors(NPN Verdoppelt) | Leshan Radio Company |
| 251043 | BC647BDW1T1 | Universelles Verdoppelungtransistors(NPN Verdoppelt) | Leshan Radio Company |
| 251044 | BC647CDW1T1 | Universelles Verdoppelungtransistors(NPN Verdoppelt) | Leshan Radio Company |
| 251045 | BC648BDW1T1 | Universelles Verdoppelungtransistors(NPN Verdoppelt) | Leshan Radio Company |
| 251046 | BC648CDW1T1 | Universelles Verdoppelungtransistors(NPN Verdoppelt) | Leshan Radio Company |
| 251047 | BC68-25PA | 20 V, 2 A NPN-Transistor mittlerer Leistung | NXP Semiconductors |
| 251048 | BC68PA | 20 V, 2 A NPN-Transistor mittlerer Leistung | NXP Semiconductors |
| 251049 | BC69-16PA | 20 V, 2 A PNP-Transistor mittlerer Leistung | NXP Semiconductors |
| 251050 | BC69-25PA | 20 V, 2 A PNP-Transistor mittlerer Leistung | NXP Semiconductors |
| 251051 | BC69PA | 20 V, 2 A PNP-Transistor mittlerer Leistung | NXP Semiconductors |
| 251052 | BC727 | PNP SILIKONAF MITTLERE ENERGIE TRANSISTOREN | Micro Electronics |
| 251053 | BC728 | PNP SILIKONAF MITTLERE ENERGIE TRANSISTOREN | Micro Electronics |
| 251054 | BC737 | NPN SILIKONAF MITTLERE ENERGIE TRANSISTOREN | Micro Electronics |
| 251055 | BC738 | NPN SILIKONAF MITTLERE ENERGIE TRANSISTOREN | Micro Electronics |
| 251056 | BC807 | PNP Zwecktransistor | Philips |
| 251057 | BC807 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 251058 | BC807 | Universeller Transistor | Korea Electronics (KEC) |
| 251059 | BC807 | Kleine Signal-Transistoren (PNP) | Vishay |
| 251060 | BC807 | SOT23 PNP SILIKON-PLANARER MITTLERER ENERGIE TRANSISTOR | Zetex Semiconductors |
| 251061 | BC807 | Kleine Signal-Transistoren (PNP) | General Semiconductor |
| 251062 | BC807 | PNP Silikon Af Transistor | Infineon |
| 251063 | BC807 | PNP Silikon AF Transistoren (für hohe Stromverstärkung allgemeine des AF Anwendungen hohe Kollektorstroms) | Siemens |
| 251064 | BC807 | PNP Silikon-Transistor (hohe gegenwärtige Anwendung Schaltung Anwendung) | AUK Corp |
| 251065 | BC807 | Universelles Transistors(PNP Silikon) | Leshan Radio Company |
| 251066 | BC807 | PNP OBERFLÄCHE EINFASSUNG TRANSISTOR | Diodes |
| 251067 | BC807 | Oberflächeneinfassung Silikon-Epitaxial- PlanarTransistors | Diotec Elektronische |
| 251068 | BC807 | 45 V, 500 mA PNP Zwecktransistoren | NXP Semiconductors |
| 251069 | BC807 | 0.250W General Purpose PNP SMD-Transistor. 45V Vceo, 0,500A Ic, 40 hFE. Ergänzende BC817 | Continental Device India Limited |
| 251070 | BC807-16 | PNP Zwecktransistor | Philips |
| 251071 | BC807-16 | PNP Zweck-Verstärker | Fairchild Semiconductor |
| 251072 | BC807-16 | SOT23 PNP SILIKON-PLANARER MITTLERER ENERGIE TRANSISTOR | Zetex Semiconductors |
| 251073 | BC807-16 | Zweipolige Transistoren | Diodes |
| 251074 | BC807-16 | Universelle Transistoren - Paket SOT23 | Infineon |
| 251075 | BC807-16 | PNP Silikon AF Transistoren (für hohe Stromverstärkung allgemeine des AF Anwendungen hohe Kollektorstroms) | Siemens |
| 251076 | BC807-16 | Transistoren, Rf U. Af | Vishay |
| 251077 | BC807-16 | Oberflächeneinfassung Silikon-Epitaxial- PlanarTransistors | Diotec Elektronische |
| 251078 | BC807-16 | 45 V, 500 mA PNP Zwecktransistoren | NXP Semiconductors |
| 251079 | BC807-16 | 0.250W General Purpose PNP SMD-Transistor. 45V Vceo, 0,500A Ic, 100-250 hFE. Ergänzende BC817-16 | Continental Device India Limited |
| 251080 | BC807-16 | Kleiner Signal-Transistor (PNP) | General Semiconductor |
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