| Nr. | Teilname | Beschreibung | Hersteller |
| 331841 | CSD19533KCS | 100V, 8.7mOhm, TO-220-N-Kanal Power MOSFET NexFET | Texas Instruments |
| 331842 | CSD19533Q5A | 100V, 7.8mOhm, SON5x6 N-Kanal Power MOSFET NexFET | Texas Instruments |
| 331843 | CSD20060D | NULLWIEDERAUFNAHME GLEICHRICHTER | etc |
| 331844 | CSD20060D | NULLWIEDERAUFNAHME GLEICHRICHTER | etc |
| 331845 | CSD20060D | 600V; 20A; keine Verwertungsgewinne erzielt Gleichrichter. Für Schaltnetzteile, Power Factor Correction, Motorsteuerung, Dämpfer | CREE POWER |
| 331846 | CSD20120 | GLEICHRICHTER | etc |
| 331847 | CSD20120 | GLEICHRICHTER | etc |
| 331848 | CSD20120D | GLEICHRICHTER | etc |
| 331849 | CSD20120D | GLEICHRICHTER | etc |
| 331850 | CSD22202W15 | P-Kanal-MOSFET NexFET ™ Power | Texas Instruments |
| 331851 | CSD23381F4 | 12V, P-Kanal-MOSFET FemtoFET ??™ | Texas Instruments |
| 331852 | CSD2470 | 0.400W General Purpose NPN Plastic Leaded Transistor. 10V Vceo, 5.000A Ic, 270-820 hFE | Continental Device India Limited |
| 331853 | CSD25211W1015 | P-Kanal-MOSFET NexFET ™ Power | Texas Instruments |
| 331854 | CSD25213W10 | P-Kanal-MOSFET NexFET ™ Power | Texas Instruments |
| 331855 | CSD25302Q2 | P-Kanal-MOSFET NexFET ™ Power | Texas Instruments |
| 331856 | CSD25303W1015 | P-Kanal Power MOSFET NexFET | Texas Instruments |
| 331857 | CSD25402Q3A | P-Kanal Power MOSFET NexFET | Texas Instruments |
| 331858 | CSD25481F4 | 20V P-Kanal-MOSFET FemtoFET ??™ | Texas Instruments |
| 331859 | CSD25483F4 | 20V P-Kanal-MOSFET FemtoFET ??™ | Texas Instruments |
| 331860 | CSD288 | 25.000W Low Frequency NPN Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40-240 hFE. | Continental Device India Limited |
| 331861 | CSD3080H | Einzelne Störungsbesuch POW-R-BLOK.?odules 400 Volt Amperes/800 | Powerex Power Semiconductors |
| 331862 | CSD3120H | Einzelne Störungsbesuch POW-R-BLOK.?odules 400 Volt Amperes/1200-1600 | Powerex Power Semiconductors |
| 331863 | CSD313 | 30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-320 hFE. | Continental Device India Limited |
| 331864 | CSD313C | 30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-80 hFE. | Continental Device India Limited |
| 331865 | CSD313D | 30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60-120 hFE. | Continental Device India Limited |
| 331866 | CSD313E | 30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100-200 hFE. | Continental Device India Limited |
| 331867 | CSD313F | 30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160-320 hFE. | Continental Device India Limited |
| 331868 | CSD3160H | Einzelne Störungsbesuch POW-R-BLOK.?odules 400 Volt Amperes/1200-1600 | Powerex Power Semiconductors |
| 331869 | CSD362 | 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20-140 hFE. | Continental Device India Limited |
| 331870 | CSD362N | 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20-50 hFE. | Continental Device India Limited |
| 331871 | CSD362O | 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70-140 hFE. | Continental Device India Limited |
| 331872 | CSD362R | 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40-80 hFE. | Continental Device India Limited |
| 331873 | CSD363 | 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40-240 hFE. | Continental Device India Limited |
| 331874 | CSD363O | 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70-140 hFE. | Continental Device India Limited |
| 331875 | CSD363R | 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40-80 hFE. | Continental Device India Limited |
| 331876 | CSD363Y | 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120-240 hFE. | Continental Device India Limited |
| 331877 | CSD401 | 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40-400 hFE. Ergänzende CSB546 | Continental Device India Limited |
| 331878 | CSD401G | 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 200-400 hFE. Ergänzende CSB546G | Continental Device India Limited |
| 331879 | CSD401O | 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70-140 hFE. Ergänzende CSB546O | Continental Device India Limited |
| 331880 | CSD401R | 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40-80 hFE. Ergänzende CSB546R | Continental Device India Limited |
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