| Nr. | Teilname | Beschreibung | Hersteller |
| 429961 | FZT955 | 140V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429962 | FZT955TA | 140V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429963 | FZT956 | PNP Hohes VoltageTransistor | Zetex Semiconductors |
| 429964 | FZT956 | 200V PNP SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOR IN SOT223 | Diodes |
| 429965 | FZT956QTA | 200V PNP SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOR IN SOT223 | Diodes |
| 429966 | FZT956TA | 200V PNP SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOR IN SOT223 | Diodes |
| 429967 | FZT957 | PNP Hohes VoltageTransistor | Zetex Semiconductors |
| 429968 | FZT957 | 300V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429969 | FZT957TA | 300V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429970 | FZT957TC | 300V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429971 | FZT958 | PNP Hohes VoltageTransistor | Zetex Semiconductors |
| 429972 | FZT958 | 400V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429973 | FZT958TA | 400V PNP MEDIUM Leistungstransistor SOT223 | Diodes |
| 429974 | FZT968 | PNP Niedriger Gesessener Transistor | Zetex Semiconductors |
| 429975 | FZT968 | Discrete - Bipolare Transistoren - Transistor (BJT) Master-Tabelle - Transistoren | Diodes |
| 429976 | FZT969 | SOT223 NPN SILIKON-PLANARER HOHER GEGENWÄRTIGER (HOHE LEISTUNG) TRANSISTOR | Zetex Semiconductors |
| 429977 | FZTA14 | NPN Darlington Transistor | Zetex Semiconductors |
| 429978 | FZTA14 | Discrete - Bipolare Transistoren - Darlington-Transistoren | Diodes |
| 429979 | FZTA14TA | Discrete - Bipolare Transistoren - Darlington-Transistoren | Diodes |
| 429980 | FZTA42 | NPN Hohes VoltageTransistor | Zetex Semiconductors |
| 429981 | FZTA42 | SOT223 NPN SILIKON-PLANARE Hochspannungstransistor | Diodes |
| 429982 | FZTA64 | SOT223 PNP PLANARE DARLINGTON TRANSISTOREN DES SILIKON- | Zetex Semiconductors |
| 429983 | FZTA92 | PNP Hochspannung-Transistor | Zetex Semiconductors |
| 429984 | FZTA92 | SOT223 PNP SILIKON-PLANARE Hochspannungstransistor | Diodes |
| 429985 | G | Militär, MIL-R-26, das, Art RW, Präzision Energie, das Silikon beschichtet wird qualifiziert wird, führt geschweißten Aufbau, das Hochtemperatursilikon durch, das beschichtet wird und geformt ist, vorhanden in den nichtinduktiven Art | Vishay |
| 429986 | G-310 | FOTO-UNTERBRECHER | etc |
| 429987 | G01BA | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429988 | G01BB | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429989 | G01BC | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429990 | G01BE | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429991 | G01BF | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429992 | G01BG | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429993 | G01CA | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429994 | G01CB | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429995 | G01CC | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429996 | G01CE | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429997 | G01CF | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429998 | G01CG | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 429999 | G01RA | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
| 430000 | G01RB | SUBMINATURE/MULTI-FUNCTION/UNBRACKETED | etc |
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