| Nr. | Teilname | Beschreibung | Hersteller |
| 45601 | 2N3772 | HOHE ENERGIE NPN SILIKON-TRANSISTOR | ST Microelectronics |
| 45602 | 2N3772 | NPN Transistor | Microsemi |
| 45603 | 2N3772 | HOHE ENERGIE NPN SILIKON-TRANSISTOR | SGS Thomson Microelectronics |
| 45604 | 2N3772 | HOHE ENERGIE NPN SILIKON-TRANSISTOR | SGS Thomson Microelectronics |
| 45605 | 2N3772 | ENERGIE TRANSISTORS(150W) | MOSPEC Semiconductor |
| 45606 | 2N3772 | HOHE ENERGIE NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 45607 | 2N3772 | NPN PLANARES ENDVERSTÄRKER-DC DES SILIKON-TRANSISTOR(AUDIO ZUM DC KONVERTER) | Wing Shing Computer Components |
| 45608 | 2N3772 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 45609 | 2N3772 | Energie 20A 60V Getrenntes NPN | ON Semiconductor |
| 45610 | 2N3772 | 150.000W Leistung NPN Metall kann der Transistor. 60V Vceo, 20.000A Ic, 15-60 hFE. | Continental Device India Limited |
| 45611 | 2N3772 | 100 V, 30 A, 150 W, NPN Silizium-Leistungstransistor | Texas Instruments |
| 45612 | 2N3773 | ENERGIE TRANSISTORS(16A, 140v, 150w) | MOSPEC Semiconductor |
| 45613 | 2N3773 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 45614 | 2N3773 | NPN PLANARES ENDVERSTÄRKER-DC DES SILIKON-TRANSISTOR(AUDIO ZUM DC KONVERTER) | Wing Shing Computer Components |
| 45615 | 2N3773 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 45616 | 2N3773 | Energie 16A 140V Getrenntes NPN | ON Semiconductor |
| 45617 | 2N3773 | 150.000W Leistung NPN Metall kann der Transistor. 140V Vceo, 16.000A Ic, 5 hFE. | Continental Device India Limited |
| 45618 | 2N3773 | Hochspannung, Hochleistungstransistor. 160V, 150W. | General Electric Solid State |
| 45619 | 2N3773 | Hohe Leistung NPN-Transistor. Hohe Leistungs Audio- und lineare Anwendungen. Vceo = 140Vdc, Vcer = 150V DC betragen, Vcb = 160Vdc VEB = 7VDC, Ic = 16Adc, Ib = 4Adc, PD = 150W. | USHA India LTD |
| 45620 | 2N3773-D | Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 45621 | 2N3773AR | NPN Silizium-Leistungstransistor. 16Amp, 140V, 150Watt. Hohe Leistungs Audio, Platten Kopfpositioniereinrichtungen und andere lineare Anwendungen. Leistungsschaltkreise wie Relais oder Magnettreiber, DC-DC-Konverter oder Inverter. | USHA India LTD |
| 45622 | 2N3789 | ENERGIE TRANSISTORS(10A, 150w) | MOSPEC Semiconductor |
| 45623 | 2N3789 | ENERGIE TRANSISTOREN DES SILIKON-PNP | Boca Semiconductor Corporation |
| 45624 | 2N3789 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 45625 | 2N3789 | 80V Epitaxial-Basis NPN-PNP | Comset Semiconductors |
| 45626 | 2N3789 | Chip: Geometrie 0220; Polarität NPN | Semicoa Semiconductor |
| 45627 | 2N3790 | ENERGIE TRANSISTOREN DES SILIKON-PNP | Boca Semiconductor Corporation |
| 45628 | 2N3790 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 45629 | 2N3790 | ENERGIE TRANSISTOREN: UNIVERSELLE VERSTÄRKER-UND LOW-FREQUENCY SCHALTUNG ANWENDUNG | MOSPEC Semiconductor |
| 45630 | 2N3790 | 100V Epitaxial-Basis NPN-PNP | Comset Semiconductors |
| 45631 | 2N3791 | PNP Transistor | Microsemi |
| 45632 | 2N3791 | ENERGIE TRANSISTOREN DES SILIKON-PNP | Boca Semiconductor Corporation |
| 45633 | 2N3791 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 45634 | 2N3791 | ENERGIE TRANSISTOREN: UNIVERSELLE VERSTÄRKER-UND LOW-FREQUENCY SCHALTUNG ANWENDUNG | MOSPEC Semiconductor |
| 45635 | 2N3791 | 80V Epitaxial-Basis NPN-PNP | Comset Semiconductors |
| 45636 | 2N3791 | Silikon PNP epitaktischen-Basishochleistungstransistor. -60V, 150W. | General Electric Solid State |
| 45637 | 2N3791 | -60 V, -10 C, 150 W, PNP Silizium-Leistungstransistor | Texas Instruments |
| 45638 | 2N3792 | PNP Transistor | Microsemi |
| 45639 | 2N3792 | ENERGIE TRANSISTORS(10A, 150w) | MOSPEC Semiconductor |
| 45640 | 2N3792 | ENERGIE TRANSISTOREN DES SILIKON-PNP | Boca Semiconductor Corporation |
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