Nr. | Teilname | Beschreibung | Hersteller |
47441 | 2N5401SAM | 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE | Continental Device India Limited |
47442 | 2N5401TA | PNP Zweck-Verstärker | Fairchild Semiconductor |
47443 | 2N5401TAR | PNP Zweck-Verstärker | Fairchild Semiconductor |
47444 | 2N5401TF | PNP Zweck-Verstärker | Fairchild Semiconductor |
47445 | 2N5401TFR | PNP Zweck-Verstärker | Fairchild Semiconductor |
47446 | 2N5401UB1 | Hallo-Rel PNP-Bipolartransistors 150 V, 0,5 A | ST Microelectronics |
47447 | 2N5401UBG | Hallo-Rel PNP-Bipolartransistors 150 V, 0,5 A | ST Microelectronics |
47448 | 2N5401UBT | Hallo-Rel PNP-Bipolartransistors 150 V, 0,5 A | ST Microelectronics |
47449 | 2N5401ZL1 | Kleiner Signal-Verstärker PNP | ON Semiconductor |
47450 | 2N5401ZL1 | Kleiner Signal-Verstärker PNP | ON Semiconductor |
47451 | 2N5401_D81Z | PNP Zweck-Verstärker | Fairchild Semiconductor |
47452 | 2N5401_J05Z | PNP Zweck-Verstärker | Fairchild Semiconductor |
47453 | 2N5401_J61Z | PNP Zweck-Verstärker | Fairchild Semiconductor |
47454 | 2N5404 | KLEINE TRANSISTOREN DES SIGNAL-PNP IN TO-5 | SemeLAB |
47455 | 2N5405 | KLEINE TRANSISTOREN DES SIGNAL-PNP IN TO-5 | SemeLAB |
47456 | 2N5406 | KLEINE TRANSISTOREN DES SIGNAL-PNP IN TO-5 | SemeLAB |
47457 | 2N5407 | KLEINE TRANSISTOREN DES SIGNAL-PNP IN TO-5 | SemeLAB |
47458 | 2N5414 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
47459 | 2N5414 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
47460 | 2N5415 | TRANSISTOREN DES SILIKON-PNP | ST Microelectronics |
47461 | 2N5415 | PNP Transistor | Microsemi |
47462 | 2N5415 | TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
47463 | 2N5415 | HOCHSPANNUNGSVERSTÄRKER | Boca Semiconductor Corporation |
47464 | 2N5415 | PNP Hochspannungstransistoren | Philips |
47465 | 2N5415 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
47466 | 2N5415 | 1.000W General Purpose PNP Metall kann der Transistor. 200V Vceo, 1.000A Ic, 30-150 hFE. | Continental Device India Limited |
47467 | 2N5415 | PNP Silizium-Leistungstransistor. | Fairchild Semiconductor |
47468 | 2N5415 | Hochspannungs-Silizium-PNP Planartransistor. | General Electric Solid State |
47469 | 2N5415CSM4 | PNP PLANARER EPITAXIAL- TRANSISTOR IN Einem HERMETISCH KERAMISCHEN OBERFLÄCHENEINFASSUNG SIEGELPAKET FÜR HOHE ZUVERLÄSSIGKEIT ANWENDUNGEN | SemeLAB |
47470 | 2N5415S | PNP Transistor | Microsemi |
47471 | 2N5415S | HIGH-VOLTAGE VERSTÄRKER | SGS Thomson Microelectronics |
47472 | 2N5415S | HIGH-VOLTAGE VERSTÄRKER | ST Microelectronics |
47473 | 2N5416 | TRANSISTOREN DES SILIKON-PNP | ST Microelectronics |
47474 | 2N5416 | PNP Transistor | Microsemi |
47475 | 2N5416 | TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
47476 | 2N5416 | HOCHSPANNUNGSVERSTÄRKER | Boca Semiconductor Corporation |
47477 | 2N5416 | PNP Hochspannungstransistoren | Philips |
47478 | 2N5416 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
47479 | 2N5416 | 1.000W General Purpose PNP Metall kann der Transistor. 300V Vceo, 1.000A Ic, 30-120 hFE. | Continental Device India Limited |
47480 | 2N5416 | PNP Silizium-Leistungstransistor. | Fairchild Semiconductor |
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