| Nr. | Teilname | Beschreibung | Hersteller |
| 48241 | 2N6052 | Energie 12A 100V Darlington PNP | ON Semiconductor |
| 48242 | 2N6052 | 100V Strom komplementären Silizium-Transistor | Comset Semiconductors |
| 48243 | 2N6052 | 12A PNP monolithischen Darlington-Leistungstransistor. | General Electric Solid State |
| 48244 | 2N6052-D | Darlington Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 48245 | 2N6053 | ENERGIE TRANSISTORS(8A, 100w) | MOSPEC Semiconductor |
| 48246 | 2N6053 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48247 | 2N6053 | 60V komplementären Leistungs Darlington | Comset Semiconductors |
| 48248 | 2N6054 | ENERGIE TRANSISTORS(8A, 100w) | MOSPEC Semiconductor |
| 48249 | 2N6054 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48250 | 2N6055 | ENERGIE TRANSISTORS(8A, 100w) | MOSPEC Semiconductor |
| 48251 | 2N6055 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48252 | 2N6055 | 60V komplementären Leistungs Darlington | Comset Semiconductors |
| 48253 | 2N6055 | 8 A Silizium NPN Darlington-Leistungstransistor. | General Electric Solid State |
| 48254 | 2N6056 | ENERGIE TRANSISTORS(8A, 100w) | MOSPEC Semiconductor |
| 48255 | 2N6056 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48256 | 2N6056 | 8 A Silizium NPN Darlington-Leistungstransistor. | General Electric Solid State |
| 48257 | 2N6056-D | NPN Darlington Silikon-Energie Transistor | ON Semiconductor |
| 48258 | 2N6057 | ENERGIE TRANSISTORS(12A, 150w) | MOSPEC Semiconductor |
| 48259 | 2N6057 | DARLINGTON ERGÄNZENDE SILICON-POWER TRANSISTOREN | Boca Semiconductor Corporation |
| 48260 | 2N6057 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48261 | 2N6057 | 60V Strom komplementären Silizium-Transistor | Comset Semiconductors |
| 48262 | 2N6057 | 12A NPN monolithischen Darlington-Leistungstransistor. | General Electric Solid State |
| 48263 | 2N6058 | NPN Darlington Transistor | Microsemi |
| 48264 | 2N6058 | ENERGIE TRANSISTORS(12A, 150w) | MOSPEC Semiconductor |
| 48265 | 2N6058 | DARLINGTON ERGÄNZENDE SILICON-POWER TRANSISTOREN | Boca Semiconductor Corporation |
| 48266 | 2N6058 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48267 | 2N6058 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 48268 | 2N6058 | 80V Strom komplementären Silizium-Transistor | Comset Semiconductors |
| 48269 | 2N6058 | 12A NPN monolithischen Darlington-Leistungstransistor. | General Electric Solid State |
| 48270 | 2N6059 | ERGÄNZENDER SILIKON-ENERGIE DARLINGTON TRANSISTOR | ST Microelectronics |
| 48271 | 2N6059 | NPN Darlington Transistor | Microsemi |
| 48272 | 2N6059 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOR | SGS Thomson Microelectronics |
| 48273 | 2N6059 | ENERGIE TRANSISTORS(12A, 150w) | MOSPEC Semiconductor |
| 48274 | 2N6059 | DARLINGTON ERGÄNZENDE SILICON-POWER TRANSISTOREN | Boca Semiconductor Corporation |
| 48275 | 2N6059 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48276 | 2N6059 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 48277 | 2N6059 | 100V Strom komplementären Silizium-Transistor | Comset Semiconductors |
| 48278 | 2N6059 | 12A NPN monolithischen Darlington-Leistungstransistor. | General Electric Solid State |
| 48279 | 2N6071 | TRIAC 4 AMPERE Effektivwert 200 bis 600 VOLT | Motorola |
| 48280 | 2N6071 | Sensitive-Gate Triacs | ON Semiconductor |
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