| Nr. | Teilname | Beschreibung | Hersteller |
| 48321 | 2N6080 | V (CBO): 36V; V (CEO): 18V; V (ebo): 4V; VHF Kommunikation Transistor | SGS Thomson Microelectronics |
| 48322 | 2N6081 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48323 | 2N6081 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48324 | 2N6081 | V (CBO): 36V; V (CEO): 18V; V (ebo): 4V; VHF Kommunikation Transistor | SGS Thomson Microelectronics |
| 48325 | 2N6082 | NPN Silikon Rf Energie Transistoren | Motorola |
| 48326 | 2N6082 | VHF Kommunikationen Transistor | ST Microelectronics |
| 48327 | 2N6082 | V (CBO): 36V; V (CEO): 18V; V (ebo): 4V; VHF Kommunikation Transistor | SGS Thomson Microelectronics |
| 48328 | 2N6083 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48329 | 2N6083 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48330 | 2N6083 | V (CBO): 36V; V (CEO): 18V; V (ebo): 4V; VHF Kommunikation Transistor | SGS Thomson Microelectronics |
| 48331 | 2N6084 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48332 | 2N6084 | RF U. MIKROWELLE TRANSISTOREN 130... 230 MHZ FM MODUL-ANWENDUNGEN | Microsemi |
| 48333 | 2N6084 | V (CBO): 36V; V (CEO): 18V; V (ebo): 4V; VHF Kommunikation Transistor | SGS Thomson Microelectronics |
| 48334 | 2N6099 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48335 | 2N6101 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48336 | 2N6101 | 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 48337 | 2N6103 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48338 | 2N6106 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48339 | 2N6106 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V. | General Electric Solid State |
| 48340 | 2N6107 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | ST Microelectronics |
| 48341 | 2N6107 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
| 48342 | 2N6107 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
| 48343 | 2N6107 | ENERGIE TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
| 48344 | 2N6107 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48345 | 2N6107 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48346 | 2N6107 | Energie 7A 70V Getrenntes PNP | ON Semiconductor |
| 48347 | 2N6107 | 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. | Continental Device India Limited |
| 48348 | 2N6107 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V. | General Electric Solid State |
| 48349 | 2N6107 | PNP Silikon Kunststoff-Leistungstransistor. Konzipiert für den Einsatz in Mehrzweck-Schalt- und Verstärkeranwendungen. Vceo = 70Vdc, Vcb = 80VDC VEB = 5VDC Ic = 7Adc, PD = 40W. | USHA India LTD |
| 48350 | 2N6107-D | Ergänzendes Silikon-Plastikenergie Transistoren | ON Semiconductor |
| 48351 | 2N6108 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48352 | 2N6108 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V. | General Electric Solid State |
| 48353 | 2N6109 | ENERGIE TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
| 48354 | 2N6109 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48355 | 2N6109 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48356 | 2N6109 | Energie 7A 50V Getrenntes PNP | ON Semiconductor |
| 48357 | 2N6109 | 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30-150 hFE. | Continental Device India Limited |
| 48358 | 2N6109 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V. | General Electric Solid State |
| 48359 | 2N6110 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48360 | 2N6110 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -40 V. | General Electric Solid State |
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