| Nr. | Teilname | Beschreibung | Hersteller |
| 48361 | 2N6111 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | ST Microelectronics |
| 48362 | 2N6111 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
| 48363 | 2N6111 | SCHALTUNG TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
| 48364 | 2N6111 | ENERGIE TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
| 48365 | 2N6111 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48366 | 2N6111 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48367 | 2N6111 | Energie 7A 30V Getrenntes PNP | ON Semiconductor |
| 48368 | 2N6111 | 40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30-150 hFE. | Continental Device India Limited |
| 48369 | 2N6111 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -40 V. | General Electric Solid State |
| 48370 | 2N6116 | Silicon programmierbare unijuction Transistor. | Motorola |
| 48371 | 2N6117 | Silicon programmierbare unijuction Transistor. | Motorola |
| 48372 | 2N6118 | Silicon programmierbare unijuction Transistor. | Motorola |
| 48373 | 2N6121 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48374 | 2N6121 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48375 | 2N6121 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48376 | 2N6121 | 40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. | Continental Device India Limited |
| 48377 | 2N6121 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 45V. | General Electric Solid State |
| 48378 | 2N6122 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48379 | 2N6122 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48380 | 2N6122 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48381 | 2N6122 | 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25-100 hFE. | Continental Device India Limited |
| 48382 | 2N6122 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V. | General Electric Solid State |
| 48383 | 2N6123 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48384 | 2N6123 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48385 | 2N6123 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48386 | 2N6123 | 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 48387 | 2N6123 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V. | General Electric Solid State |
| 48388 | 2N6124 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48389 | 2N6124 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48390 | 2N6124 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48391 | 2N6124 | 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25-100 hFE. | Continental Device India Limited |
| 48392 | 2N6124 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -45V. | General Electric Solid State |
| 48393 | 2N6125 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48394 | 2N6125 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48395 | 2N6125 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48396 | 2N6125 | 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25-100 hFE. | Continental Device India Limited |
| 48397 | 2N6125 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V. | General Electric Solid State |
| 48398 | 2N6126 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | MOSPEC Semiconductor |
| 48399 | 2N6126 | Mittlere Energie linear und Schaltung Anwendungen | Boca Semiconductor Corporation |
| 48400 | 2N6126 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
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