| Nr. | Teilname | Beschreibung | Hersteller |
| 48561 | 2N6288 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 40V. | General Electric Solid State |
| 48562 | 2N6289 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48563 | 2N6289 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 40V. | General Electric Solid State |
| 48564 | 2N6290 | ENERGIE TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
| 48565 | 2N6290 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48566 | 2N6290 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48567 | 2N6290 | 40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Ergänzende 2N6109 | Continental Device India Limited |
| 48568 | 2N6290 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V. | General Electric Solid State |
| 48569 | 2N6291 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48570 | 2N6291 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V. | General Electric Solid State |
| 48571 | 2N6292 | ENERGIE TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
| 48572 | 2N6292 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48573 | 2N6292 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48574 | 2N6292 | Energie 7A 70V Getrenntes NPN | ON Semiconductor |
| 48575 | 2N6292 | 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. | Continental Device India Limited |
| 48576 | 2N6292 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V. | General Electric Solid State |
| 48577 | 2N6292 | Silicon plastik NPN-Transistor. Allzweck-Schalt- und Verstärkeranwendungen. Vceo = 70Vdc, Vcb = 80VDC VEB = 5VDC, Ic = 7Adc, Ib = 3Adc, PD = 40W. | USHA India LTD |
| 48578 | 2N6293 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48579 | 2N6293 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V. | General Electric Solid State |
| 48580 | 2N6294 | ERGÄNZENDES SILIKON DARLINGTONl | Central Semiconductor |
| 48581 | 2N6295 | ERGÄNZENDES SILIKON DARLINGTONl | Central Semiconductor |
| 48582 | 2N6295 | DARLINGTON ERGÄNZENDER SILIKON-ENERGIE TRANSISTOR | SemeLAB |
| 48583 | 2N6296 | ERGÄNZENDES SILIKON DARLINGTONl | Central Semiconductor |
| 48584 | 2N6296 | Zweipolige PNP Vorrichtung | SemeLAB |
| 48585 | 2N6297 | ERGÄNZENDES SILIKON DARLINGTONl | Central Semiconductor |
| 48586 | 2N6298 | PNP Darlington Transistor | Microsemi |
| 48587 | 2N6298 | ENERGIE TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
| 48588 | 2N6298 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48589 | 2N6298 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48590 | 2N6299 | PNP Darlington Transistor | Microsemi |
| 48591 | 2N6299 | ENERGIE TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
| 48592 | 2N6299 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48593 | 2N6299 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48594 | 2N6300 | NPN Darlington Transistor | Microsemi |
| 48595 | 2N6300 | ENERGIE TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
| 48596 | 2N6300 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48597 | 2N6300 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48598 | 2N6301 | NPN Darlington Transistor | Microsemi |
| 48599 | 2N6301 | ENERGIE TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
| 48600 | 2N6301 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
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