| Nr. | Teilname | Beschreibung | Hersteller |
| 48881 | 2N6488 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48882 | 2N6488 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48883 | 2N6488 | Energie 15A 80V Getrenntes NPN | ON Semiconductor |
| 48884 | 2N6488 | 75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48885 | 2N6488 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 90V. | General Electric Solid State |
| 48886 | 2N6489 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48887 | 2N6489 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48888 | 2N6489 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48889 | 2N6489 | 75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48890 | 2N6489 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -50 V. | General Electric Solid State |
| 48891 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 48892 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48893 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48894 | 2N6490 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48895 | 2N6490 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48896 | 2N6490 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48897 | 2N6490 | Energie 15A 80V Getrenntes NPN | ON Semiconductor |
| 48898 | 2N6490 | 75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48899 | 2N6490 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -70V. | General Electric Solid State |
| 48900 | 2N6491 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48901 | 2N6491 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48902 | 2N6491 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48903 | 2N6491 | Energie 15A 80V Getrenntes PNP | ON Semiconductor |
| 48904 | 2N6491 | 75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48905 | 2N6491 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -90V. | General Electric Solid State |
| 48906 | 2N6494 | PNP SILIKON-ENERGIE TRANSISTOR | Boca Semiconductor Corporation |
| 48907 | 2N6496 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit Silizium NPN Planartransistor. | General Electric Solid State |
| 48908 | 2N6497 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
| 48909 | 2N6497 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48910 | 2N6497 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48911 | 2N6497 | Energie 5A 250V Getrenntes NPN | ON Semiconductor |
| 48912 | 2N6497-D | Hochspannungs-NPN Silikon-Energie Transistoren | ON Semiconductor |
| 48913 | 2N6498 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
| 48914 | 2N6498 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48915 | 2N6498 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48916 | 2N6498 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 48917 | 2N6499 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
| 48918 | 2N6499 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48919 | 2N6499 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48920 | 2N6500 | EPITAXIAL- PLANARE SCHNELLTRANSISTOREN DES KOLLEKTOR-SILIKON-NPN | General Electric Solid State |
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