| Nr. | Teilname | Beschreibung | Hersteller |
| 48961 | 2N6516 | 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0,500A Ic, 30 - hFE | Continental Device India Limited |
| 48962 | 2N6516 | Hochspannungstransistoren. Kollektor-Emitter-Spannung: 250V = Vceo. Kollektor-Basis-Spannung: 250V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 48963 | 2N6517 | NPN Epitaxial- Silikon-Transistor - Hochspannungstransistor | Fairchild Semiconductor |
| 48964 | 2N6517 | NPN SILIKON-PLANARER MITTLERER ENERGIE TRANSISTOR | Zetex Semiconductors |
| 48965 | 2N6517 | Hochspannungstransistor 625mW | Micro Commercial Components |
| 48966 | 2N6517 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48967 | 2N6517 | Hochspannungstransistoren | ON Semiconductor |
| 48968 | 2N6517 | NPN EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 48969 | 2N6517 | 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0,500A Ic, 20 - hFE | Continental Device India Limited |
| 48970 | 2N6517 | Ic = 500mA, VCE = 10V-Transistor | MCC |
| 48971 | 2N6517 | Hochspannungstransistoren. Kollektor-Emitter-Spannung: 350V = Vceo. Kollektor-Basis-Spannung: 350V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 48972 | 2N6517BU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48973 | 2N6517CBU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48974 | 2N6517CTA | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48975 | 2N6517RLRA | Hochspannungstransistoren | ON Semiconductor |
| 48976 | 2N6517RLRP | Hochspannungstransistoren | ON Semiconductor |
| 48977 | 2N6517TA | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48978 | 2N6518 | PNP Epitaxial- Silikon-Transistor - Hochspannungstransistor | Fairchild Semiconductor |
| 48979 | 2N6518 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48980 | 2N6518 | PNP EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 48981 | 2N6518 | Hochspannungstransistoren. Kollektor-Emitter-Spannung: Vceo = -250 V. Kollektor-Basis-Spannung: VCBO = -250 V. Collector Ableitung: Pc (max) = 0.625W. | USHA India LTD |
| 48982 | 2N6518BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48983 | 2N6518TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48984 | 2N6519 | PNP Epitaxial- Silikon-Transistor - Hochspannungstransistor | Fairchild Semiconductor |
| 48985 | 2N6519 | Hochspannungstransistor 625mW | Micro Commercial Components |
| 48986 | 2N6519 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48987 | 2N6519 | Hochspannungstransistoren | ON Semiconductor |
| 48988 | 2N6519 | PNP EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 48989 | 2N6519 | 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0,500A Ic, 30 - hFE | Continental Device India Limited |
| 48990 | 2N6519 | Ic = 500mA, VCE = 10V-Transistor | MCC |
| 48991 | 2N6519 | Hochspannungstransistoren. Kollektor-Emitter-Spannung: Vceo = -300. Kollektor-Basis-Spannung: VCBO = -300. Collector Ableitung: Pc (max) = 0.625W. | USHA India LTD |
| 48992 | 2N6519BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48993 | 2N6519RLRA | Hochspannungstransistoren | ON Semiconductor |
| 48994 | 2N6519TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 48995 | 2N6520 | PNP Epitaxial- Silikon-Transistor - Hochspannungstransistor | Fairchild Semiconductor |
| 48996 | 2N6520 | PNP SILIKON-PLANARER MITTLERER ENERGIE TRANSISTOR | Zetex Semiconductors |
| 48997 | 2N6520 | Hochspannungstransistor 625mW | Micro Commercial Components |
| 48998 | 2N6520 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48999 | 2N6520 | Hochspannungstransistoren | ON Semiconductor |
| 49000 | 2N6520 | PNP EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
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