| Nr. | Teilname | Beschreibung | Hersteller |
| 49001 | 2N6520 | 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0,500A Ic, 20 - hFE | Continental Device India Limited |
| 49002 | 2N6520 | Ic = 500mA, VCE = 10V-Transistor | MCC |
| 49003 | 2N6520 | Hochspannungstransistoren. Kollektor-Emitter-Spannung: Vceo = -350V. Kollektor-Basis-Spannung: VCBO = -350V. Collector Ableitung: Pc (max) = 0.625W. | USHA India LTD |
| 49004 | 2N6520 | PNP SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOR | Diodes |
| 49005 | 2N6520BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 49006 | 2N6520RL1 | Hochspannungstransistoren | ON Semiconductor |
| 49007 | 2N6520RLRA | Hochspannungstransistoren | ON Semiconductor |
| 49008 | 2N6520RLRM | Hochspannungstransistoren | ON Semiconductor |
| 49009 | 2N6520TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 49010 | 2N6530 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 49011 | 2N6530 | 8 A NPN Darlington-Leistungstransistor. 80 V. 60 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 49012 | 2N6531 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 49013 | 2N6531 | 8 A NPN Darlington-Leistungstransistor. 100 V. 60 W. Gewinn von 500 bei 3 A. | General Electric Solid State |
| 49014 | 2N6532 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 49015 | 2N6532 | 8 A NPN Darlington-Leistungstransistor. 100 V. 60 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 49016 | 2N6533 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 49017 | 2N6533 | 8 A NPN Darlington-Leistungstransistor. 120 V. 60 W. Gewinn von 1000 bei 3 A. | General Electric Solid State |
| 49018 | 2N6535 | Zweipolige NPN Vorrichtung | SemeLAB |
| 49019 | 2N6535 | Zweipolige NPN Vorrichtung | SemeLAB |
| 49020 | 2N6537 | Zweipolige NPN Vorrichtung | SemeLAB |
| 49021 | 2N6542 | ENERGIE TRANSISTORS(5A, 100w) | MOSPEC Semiconductor |
| 49022 | 2N6542 | SWCHMODE REIHE NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 49023 | 2N6542 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 49024 | 2N6542 | 3A Leistungsschalt NPN-Transistor. | General Electric Solid State |
| 49025 | 2N6543 | ENERGIE TRANSISTORS(5A, 100w) | MOSPEC Semiconductor |
| 49026 | 2N6543 | SWCHMODE REIHE NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 49027 | 2N6543 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 49028 | 2N6544 | ENERGIE TRANSISTORS(8A, 125w) | MOSPEC Semiconductor |
| 49029 | 2N6544 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 49030 | 2N6544 | 5A Leistungsschalt NPN-Transistor. | General Electric Solid State |
| 49031 | 2N6545 | ENERGIE TRANSISTORS(8A, 125w) | MOSPEC Semiconductor |
| 49032 | 2N6545 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 49033 | 2N6545 | 5A Leistungsschalt NPN-Transistor. | General Electric Solid State |
| 49034 | 2N6546 | ENERGIE TRANSISTORS(15A, 175w) | MOSPEC Semiconductor |
| 49035 | 2N6546 | SWITCHMODE REIHE NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 49036 | 2N6546 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 49037 | 2N6546 | MULTIEPITAXIAL MESA NPN | ST Microelectronics |
| 49038 | 2N6546 | 10A Leistungsschalt NPN-Transistor. | General Electric Solid State |
| 49039 | 2N6546 | MESA MULTIEPITAXIAL NPN | SGS Thomson Microelectronics |
| 49040 | 2N6547 | HOHE ENERGIE NPN SILIKON-TRANSISTOR | ST Microelectronics |
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