| Nr. | Teilname | Beschreibung | Hersteller |
| 499281 | HM5165165FTT-5 | der 64M EDODRAM (4-Mwo. x 16-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 499282 | HM5165165FTT-6 | der 64M EDODRAM (4-Mwo. x 16-bit) 8k refresh/4k erneuern | Hitachi Semiconductor |
| 499283 | HM5165165J-5 | 64M EDO DRAM (4-Mword x 16 Bit), 50ns | Hitachi Semiconductor |
| 499284 | HM5165165J-6 | 64M EDO DRAM (4-Mword x 16 Bit), 60ns | Hitachi Semiconductor |
| 499285 | HM5165165LJ-5 | 64M EDO DRAM (4-Mword x 16 Bit), 50ns | Hitachi Semiconductor |
| 499286 | HM5165165LJ-6 | 64M EDO DRAM (4-Mword x 16 Bit), 60ns | Hitachi Semiconductor |
| 499287 | HM5165165LTT-5 | 64M EDO DRAM (4-Mword x 16 Bit), 50ns | Hitachi Semiconductor |
| 499288 | HM5165165LTT-6 | 64M EDO DRAM (4-Mword x 16 Bit), 60ns | Hitachi Semiconductor |
| 499289 | HM5165165TT-5 | 64M EDO DRAM (4-Mword x 16 Bit), 50ns | Hitachi Semiconductor |
| 499290 | HM5165165TT-6 | 64M EDO DRAM (4-Mword x 16 Bit), 60ns | Hitachi Semiconductor |
| 499291 | HM5165405FJ-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 499292 | HM5165405FJ-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 499293 | HM5165405FLJ-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 499294 | HM5165405FLJ-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 499295 | HM5165405FLTT-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 499296 | HM5165405FLTT-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 499297 | HM5165405FTT-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 499298 | HM5165405FTT-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 499299 | HM51S4260AJ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÖ Random Access Memory | Hitachi Semiconductor |
| 499300 | HM51S4260AJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiß Random Access Memory | Hitachi Semiconductor |
| 499301 | HM51S4260AJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiú Random Access Memory | Hitachi Semiconductor |
| 499302 | HM51S4260ALJ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit Dynamid Random Access Memory | Hitachi Semiconductor |
| 499303 | HM51S4260ALJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÖ Random Access Memory | Hitachi Semiconductor |
| 499304 | HM51S4260ALJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiæ Random Access Memory | Hitachi Semiconductor |
| 499305 | HM51S4260ALRR-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiú Random Access Memory | Hitachi Semiconductor |
| 499306 | HM51S4260ALRR-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiæ Random Access Memory | Hitachi Semiconductor |
| 499307 | HM51S4260ALRR-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÖ Random Access Memory | Hitachi Semiconductor |
| 499308 | HM51S4260ALTT-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiß Random Access Memory | Hitachi Semiconductor |
| 499309 | HM51S4260ALTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499310 | HM51S4260ALTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiõ Random Access Memory | Hitachi Semiconductor |
| 499311 | HM51S4260ALZ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiï Random Access Memory | Hitachi Semiconductor |
| 499312 | HM51S4260ALZ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499313 | HM51S4260ALZ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÌ Random Access Memory | Hitachi Semiconductor |
| 499314 | HM51S4260ARR-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiõ Random Access Memory | Hitachi Semiconductor |
| 499315 | HM51S4260ARR-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiú Random Access Memory | Hitachi Semiconductor |
| 499316 | HM51S4260ARR-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiß Random Access Memory | Hitachi Semiconductor |
| 499317 | HM51S4260ATT-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499318 | HM51S4260ATT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÌ Random Access Memory | Hitachi Semiconductor |
| 499319 | HM51S4260ATT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499320 | HM51S4260AZ-10 | 100 ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiæ Random Access Memory | Hitachi Semiconductor |
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