| Nr. | Teilname | Beschreibung | Hersteller |
| 510161 | HY29LV800T-70 | 8 Mbit (1M x 8/512K x 16) Niederspannung Blitz-Gedächtnis | Hynix Semiconductor |
| 510162 | HY29LV800T-70I | 8 Mbit (1M x 8/512K x 16) Niederspannung Blitz-Gedächtnis | Hynix Semiconductor |
| 510163 | HY29LV800T-90 | 8 Mbit (1M x 8/512K x 16) Niederspannung Blitz-Gedächtnis | Hynix Semiconductor |
| 510164 | HY29LV800T-90I | 8 Mbit (1M x 8/512K x 16) Niederspannung Blitz-Gedächtnis | Hynix Semiconductor |
| 510165 | HY5-P | Gegenwärtige Signalumformer HY 5 zu 25-P | LEM |
| 510166 | HY50-P | Gegenwärtiger Signalumformer HY 50-P | LEM |
| 510167 | HY50-P/SP1 | Gegenwärtige Signalumformer, HY 50-P/SP1 | LEM |
| 510168 | HY50P | Gegenwärtige Signalumformer, HY 50-P/SP1 | LEM |
| 510169 | HY5100 | 2 Eingegeben/3 Geben Sie Digital Verzögerungsstrecke Aus | Hytek Microsystems |
| 510170 | HY514400A | 1M x 4-bit CMOS DRAM | etc |
| 510171 | HY514400AJ | 1M x 4-bit CMOS DRAM | etc |
| 510172 | HY514400ALJ | 1M x 4-bit CMOS DRAM | etc |
| 510173 | HY514400ALR | 1M x 4-bit CMOS DRAM | etc |
| 510174 | HY514400AR | 1M x 4-bit CMOS DRAM | etc |
| 510175 | HY514400AT | 1M x 4-bit CMOS DRAM | etc |
| 510176 | HY514400B | 1Mx4, schneller Seite Modus | etc |
| 510177 | HY514400BJ | 1Mx4, schneller Seite Modus | etc |
| 510178 | HY514400BLJ | 1Mx4, schneller Seite Modus | etc |
| 510179 | HY514400BLT | 1Mx4, schneller Seite Modus | etc |
| 510180 | HY514400BSLJ | 1Mx4, schneller Seite Modus | etc |
| 510181 | HY514400BSLT | 1Mx4, schneller Seite Modus | etc |
| 510182 | HY514400BT | 1Mx4, schneller Seite Modus | etc |
| 510183 | HY514400J | 1M x 4-bit CMOS DRAM | etc |
| 510184 | HY51V17403HGJ-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 510185 | HY51V17403HGJ-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 510186 | HY51V17403HGJ-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns | Hynix Semiconductor |
| 510187 | HY51V17403HGLJ-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns, geringer Strom | Hynix Semiconductor |
| 510188 | HY51V17403HGLJ-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns, geringer Strom | Hynix Semiconductor |
| 510189 | HY51V17403HGLJ-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns, geringer Strom | Hynix Semiconductor |
| 510190 | HY51V17403HGLT-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns, geringer Strom | Hynix Semiconductor |
| 510191 | HY51V17403HGLT-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns, geringer Strom | Hynix Semiconductor |
| 510192 | HY51V17403HGLT-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns, geringer Strom | Hynix Semiconductor |
| 510193 | HY51V17403HGT-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 510194 | HY51V17403HGT-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 510195 | HY51V17403HGT-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns | Hynix Semiconductor |
| 510196 | HY51V18163HGJ | 1M x EDO16Bit DRAM | Hynix Semiconductor |
| 510197 | HY51V18163HGJ-5 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
| 510198 | HY51V18163HGJ-6 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
| 510199 | HY51V18163HGJ-7 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
| 510200 | HY51V18163HGLJ-5 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 50ns, geringer Strom | Hynix Semiconductor |
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