| Nr. | Teilname | Beschreibung | Hersteller |
| 52361 | 2SB549 | (2SB548) PNP/NPN Silikon-Epitaxial- Transistor | NEC |
| 52362 | 2SB554 | Endverstärker-Anwendungen | TOSHIBA |
| 52363 | 2SB555 | DREIFACHER ZERSTREUTER MESA TRANSISTOR DES SILIKON-PNP | Unknow |
| 52364 | 2SB556 | DREIFACHER ZERSTREUTER MESA TRANSISTOR DES SILIKON-PNP | Unknow |
| 52365 | 2SB557 | IKONE PNP DREIFACHER ZERSTREUTER MESA TRANSISTOR | Unknow |
| 52366 | 2SB559 | Niederfrequenzenergie Ampere, Mittlere Geschwindigkeit Schaltung Anwendungen | Unknow |
| 52367 | 2SB560 | Niedrig-Frequenz Energie Ampere Anwendungen | SANYO |
| 52368 | 2SB561 | Transistor Des Silikon-PNP | Hitachi Semiconductor |
| 52369 | 2SB561 | Silikon PNP Epitaxial- | Hitachi Semiconductor |
| 52370 | 2SB561 | Transistors>Amplifiers/Bipolar | Renesas |
| 52371 | 2SB562 | Transistor Des Silikon-PNP | Hitachi Semiconductor |
| 52372 | 2SB562 | Silikon PNP Epitaxial- | Hitachi Semiconductor |
| 52373 | 2SB562 | Transistors>Amplifiers/Bipolar | Renesas |
| 52374 | 2SB564 | SILIKON-TRANSISTOR | Micro Electronics |
| 52375 | 2SB564A | Audio Frequenz-Leistungsverstärker. Kollektor-Basis-Spannung VCBO = -30V. Kollektor-Emitter-Spannung Vceo = -25 V. Emitter-Basis-Spannung Vebo = 5V. Kollektor-Verlust PC (max) = 800mW. Kollektorstrom Ic = -1.0A. | USHA India LTD |
| 52376 | 2SB566 | Dreifaches Des Silikon-PNP Zerstreut | Hitachi Semiconductor |
| 52377 | 2SB566 | Transistors>Switching/Bipolar | Renesas |
| 52378 | 2SB566(K) | Transistor Des Silikon-PNP | Hitachi Semiconductor |
| 52379 | 2SB566A | Dreifaches Des Silikon-PNP Zerstreut | Hitachi Semiconductor |
| 52380 | 2SB566A | Transistors>Switching/Bipolar | Renesas |
| 52381 | 2SB566A(K) | Transistor Des Silikon-PNP | Hitachi Semiconductor |
| 52382 | 2SB566AK | Dreifaches Des Silikon-PNP Zerstreut | Hitachi Semiconductor |
| 52383 | 2SB566K | Dreifaches Des Silikon-PNP Zerstreut | Hitachi Semiconductor |
| 52384 | 2SB592 | 750mW NPN Silizium-Transistor | Micro Electronics |
| 52385 | 2SB592A | 750mW NPN Silizium-Transistor | Micro Electronics |
| 52386 | 2SB595 | NIEDERFREQUENZENERGIE AMPLIFIER(PNP EPITAXUAL) | Wing Shing Computer Components |
| 52387 | 2SB596 | ENERGIE TRANSISTORS(4.0A, 80v, 30w) | MOSPEC Semiconductor |
| 52388 | 2SB596 | PNP EPITAXIAL- FREQUENZ-ENDVERSTÄRKER DES SILIKON-TRANSISTOR(LOW) | Wing Shing Computer Components |
| 52389 | 2SB598 | FÜR TONFREQUENZ-ENERGIE AMPERE, KONVERTER, ELEKTRONISCHE REGLER | SANYO |
| 52390 | 2SB601 | Silikontransistor | NEC |
| 52391 | 2SB601-S | Silikontransistor | NEC |
| 52392 | 2SB601-Z | Silikontransistor | NEC |
| 52393 | 2SB605 | PNP SILIKON-TRANSISTOR | NEC |
| 52394 | 2SB621 | Differentielle Vorrichtung - differentieller Transistor - Allgemein-verwenden Sie Niedrig-Frequenz Amplifires | Panasonic |
| 52395 | 2SB621 | 750mW NPN Silizium-Transistor | Micro Electronics |
| 52396 | 2SB621A | Differentielle Vorrichtung - differentieller Transistor - Allgemein-verwenden Sie Niedrig-Frequenz Amplifires | Panasonic |
| 52397 | 2SB621A | 750mW NPN Silizium-Transistor | Micro Electronics |
| 52398 | 2SB624 | SILIKON-EPITAXIAL- TRANSISTOR-MINIFORM DES TONFREQUENZ-ENDVERSTÄRKER-PNP | NEC |
| 52399 | 2SB624-L | Silikontransistor | NEC |
| 52400 | 2SB624-T1B | Silikontransistor | NEC |
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