| Nr. | Teilname | Beschreibung | Hersteller |
| 569921 | IRFP453 | N-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569922 | IRFP460 | 20A, 500V, 0.270 Ohm, N-Führung Energie Mosfet | Fairchild Semiconductor |
| 569923 | IRFP460 | N-CHANNEL 500V - 0.22 OHM - 18.4A - TO-247 POWERMESH II MOSFET | ST Microelectronics |
| 569924 | IRFP460 | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569925 | IRFP460 | N-CHANNEL 500V - 0.22 OHM - 18.4A - TO-247 POWERMESH II MOSFET | SGS Thomson Microelectronics |
| 569926 | IRFP460 | N - FÜHRUNG 500V - 0.22 Ohm - 20 A - TO-247 PowerMESH Mosfet | SGS Thomson Microelectronics |
| 569927 | IRFP460 | PowerMOS Transistoren Lawine Energie veranschlug | Philips |
| 569928 | IRFP460 | Getrennte MOSFETs: StandardN-führung Arten | IXYS |
| 569929 | IRFP460 | 20A, 500V, 0.270 Ohm, N-Kanal-Leistungs-MOSFET | Intersil |
| 569930 | IRFP460A | 20A, 500v, 0.22 Ohm, N-Führung SMPS Energie Mosfet | Fairchild Semiconductor |
| 569931 | IRFP460A | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569932 | IRFP460APBF | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569933 | IRFP460AS | 500V Single N-Führung HEXFET Energie MOSFET in einem Paket SMD-247 | International Rectifier |
| 569934 | IRFP460C | N-Führung 500V Mosfet | Fairchild Semiconductor |
| 569935 | IRFP460LC | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569936 | IRFP460LCPBF | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569937 | IRFP460N | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569938 | IRFP460NPBF | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569939 | IRFP460P | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569940 | IRFP460PBF | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569941 | IRFP460PPBF | 500V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569942 | IRFP470 | Getrennte MOSFETs: StandardN-führung Arten | IXYS |
| 569943 | IRFP4710 | 100V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569944 | IRFP4710PBF | 100V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569945 | IRFP90N20D | 200V Single N-Führung HEXFET Energie MOSFET in einem TO-247AC Paket | International Rectifier |
| 569946 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569947 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569948 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569949 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569950 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569951 | IRFP9130 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569952 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569953 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569954 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569955 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569956 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569957 | IRFP9131 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569958 | IRFP9132 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569959 | IRFP9132 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
| 569960 | IRFP9132 | P-CHANNEL ENERGIE MOSFETS | Samsung Electronic |
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