| Nr. | Teilname | Beschreibung | Hersteller |
| 881601 | MJD44H11T4 | Energie 10A 80V Winkel des Leistungshebels NPN | ON Semiconductor |
| 881602 | MJD44H11T4 | ERGÄNZENDER TRANSISTOR DES SILIKON-PNP | ST Microelectronics |
| 881603 | MJD44H11T4-A | Ergänzende Leistungstransistoren | ST Microelectronics |
| 881604 | MJD44H11T4G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881605 | MJD44H11T4G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881606 | MJD44H11T5 | Energie 10A 80V Winkel des Leistungshebels NPN | ON Semiconductor |
| 881607 | MJD44H11TF | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881608 | MJD44H11TM | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881609 | MJD45H11 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881610 | MJD45H11 | ERGÄNZENDE TRANSISTOREN DES SILIKON-PNP | ST Microelectronics |
| 881611 | MJD45H11 | ERGÄNZENDE TRANSISTOREN DES SILIKON-PNP | SGS Thomson Microelectronics |
| 881612 | MJD45H11 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE 80 VOLT 20 WATT | Motorola |
| 881613 | MJD45H11 | Energie 10A 80V Winkel des Leistungshebels PNP | ON Semiconductor |
| 881614 | MJD45H11-001 | Energie 10A 80V Winkel des Leistungshebels PNP | ON Semiconductor |
| 881615 | MJD45H11-1 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE 80 VOLT 20 WATT | Motorola |
| 881616 | MJD45H11G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881617 | MJD45H11G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881618 | MJD45H11RL | Energie 10A 80V Winkel des Leistungshebels PNP | ON Semiconductor |
| 881619 | MJD45H11T4 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE 80 VOLT 20 WATT | Motorola |
| 881620 | MJD45H11T4 | Energie 10A 80V Winkel des Leistungshebels PNP | ON Semiconductor |
| 881621 | MJD45H11T4 | ERGÄNZENDER TRANSISTOR DES SILIKON-PNP | ST Microelectronics |
| 881622 | MJD45H11T4G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881623 | MJD45H11T4G | SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 881624 | MJD45H11TF | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881625 | MJD45H11TM | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881626 | MJD47 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881627 | MJD47 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
| 881628 | MJD47 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | SGS Thomson Microelectronics |
| 881629 | MJD47 | NPN SILIKON-ENERGIE TRANSISTOREN 1 AMPERE 250, 400 VOLT 15 WATT | Motorola |
| 881630 | MJD47 | Energie 1A 250V Inspektion NPN | ON Semiconductor |
| 881631 | MJD47-1 | NPN SILIKON-ENERGIE TRANSISTOREN 1 AMPERE 250, 400 VOLT 15 WATT | Motorola |
| 881632 | MJD47-D | Hochspannungsenergie Transistoren DPAK Für Oberflächeneinfassung Anwendungen | ON Semiconductor |
| 881633 | MJD47T4 | NPN SILIKON-ENERGIE TRANSISTOREN 1 AMPERE 250, 400 VOLT 15 WATT | Motorola |
| 881634 | MJD47T4 | Energie 1A 250V Inspektion NPN | ON Semiconductor |
| 881635 | MJD47T4 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
| 881636 | MJD47TF | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881637 | MJD49 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
| 881638 | MJD49T4 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
| 881639 | MJD50 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881640 | MJD50 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
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