| Nr. | Teilname | Beschreibung | Hersteller |
| 881681 | MJE13005 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881682 | MJE13005 | Energie 4A 400V SM1 NPN | ON Semiconductor |
| 881683 | MJE13005 | 2.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10-60 hFE. | Continental Device India Limited |
| 881684 | MJE13005 | NPN, Silizium Kunststoff-Leistungstransistor. Für 115 und 220 V Schaltanwendungen wie Schaltregler, Wechselrichter Motorsteuerungen, Magnet / Relaistreiber und Ablenkschaltungen. Vceo (sus) = 400Vdc, Vcev = 700 Vdc VEB = 9Vdc, Ic = | USHA India LTD |
| 881685 | MJE13005-D | SWITCHMODE Reihe NPN Silikon-Energie Transistoren | ON Semiconductor |
| 881686 | MJE13005B | TRANSFORMATOREN DES NPN SILIKON-TRANSISTOR(ELECTRONIC, ENERGIE SWICHING STROMKREIS) | Wing Shing Computer Components |
| 881687 | MJE13005F | Schaltung Transistor | Korea Electronics (KEC) |
| 881688 | MJE13006 | ENERGIE TRANSISTORS(8A, 300-400V, 80w) | MOSPEC Semiconductor |
| 881689 | MJE13006 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881690 | MJE13006 | 2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 8.000A Ic, 8-60 hFE. | Continental Device India Limited |
| 881691 | MJE13006_13007 | Hochspannungsschalter-Modus-Anwendung | Fairchild Semiconductor |
| 881692 | MJE13007 | SCHALTUNG TRANSISTOR DES SILIKON-NPN | ST Microelectronics |
| 881693 | MJE13007 | Schaltung Transistor | Korea Electronics (KEC) |
| 881694 | MJE13007 | SCHALTUNG TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 881695 | MJE13007 | ENERGIE TRANSISTORS(8A, 300-400V, 80w) | MOSPEC Semiconductor |
| 881696 | MJE13007 | TRANSFORMATOREN DES NPN SILIKON-TRANSISTOR(ELECTRONIC, ENERGIE SWICHING STROMKREIS) | Wing Shing Computer Components |
| 881697 | MJE13007 | ENERGIE TRANSISTOR 8.0 AMPERE 400 VOLT 80/40 WATT | Motorola |
| 881698 | MJE13007 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881699 | MJE13007 | Energie 8A 400V NPN | ON Semiconductor |
| 881700 | MJE13007 | Energie 8A 400V NPN | ON Semiconductor |
| 881701 | MJE13007 | 80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5-30 hFE. | Continental Device India Limited |
| 881702 | MJE13007 | NPN, Silizium Kunststoff-Leistungstransistor. Geeignet für 115 und 220 V Schaltanwendungen wie Schaltregler, Wechselrichter, Motorsteuerungen, Magnet / Relais. Vceo (sus) = 400Vdc, Vcev = 700 Vdc VEB = 9Vdc, Ic = 8Adc, Pd = 80W. | USHA India LTD |
| 881703 | MJE13007-D | SWITCHMODE NPN Zweipoliger Energie Transistor Für Schaltung Spg.Versorgungsteil-Anwendungen | ON Semiconductor |
| 881704 | MJE13007A | SCHALTUNG TRANSISTOR DES SILIKON-NPN | ST Microelectronics |
| 881705 | MJE13007A | SCHALTUNG TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 881706 | MJE13007A | ENERGIE TRANSISTORS(8A, 400v, 80w) | MOSPEC Semiconductor |
| 881707 | MJE13007A | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881708 | MJE13007F | Schaltung Transistor | Korea Electronics (KEC) |
| 881709 | MJE13007R | Minigröße der getrennten Halbleiterelemente | SINYORK |
| 881710 | MJE13007R | Minigröße der getrennten Halbleiterelemente | SINYORK |
| 881711 | MJE13007R | Minigröße der getrennten Halbleiterelemente | SINYORK |
| 881712 | MJE13008 | ENERGIE TRANSISTORS(12A, 300-400V, 100w) | MOSPEC Semiconductor |
| 881713 | MJE13008 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881714 | MJE13009 | ENERGIE TRANSISTOR DER HOCHSPANNUNG-FAST-SWITCHING NPN | ST Microelectronics |
| 881715 | MJE13009 | SCHALTUNG TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 881716 | MJE13009 | SCHALTUNG TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 881717 | MJE13009 | ENERGIE TRANSISTORS(12A, 300-400V, 100w) | MOSPEC Semiconductor |
| 881718 | MJE13009 | 12 SILIKON-ENERGIE TRANSISTOR DES AMPERE-NPN 400 VOLT 100 WATT | Motorola |
| 881719 | MJE13009 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881720 | MJE13009 | Energie 12A 400V NPN | ON Semiconductor |
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