| Nr. | Teilname | Beschreibung | Hersteller |
| 881841 | MJE182 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881842 | MJE182 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881843 | MJE182 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881844 | MJE182 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881845 | MJE182 | ENERGIE TRANSISTORS(3.0A, 40-80V, 12.5w) | MOSPEC Semiconductor |
| 881846 | MJE182 | 3 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 60-80 VOLT 12.5 WATT | Motorola |
| 881847 | MJE182 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881848 | MJE182 | Energie 3A 80V NPN | ON Semiconductor |
| 881849 | MJE182 | 12.500W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50-250 hFE. | Continental Device India Limited |
| 881850 | MJE182 | 60 V, 3 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
| 881851 | MJE18204 | ENERGIE TRANSISTOREN 5 AMPERE 1200 VOLT 35 und 75 WATT | Motorola |
| 881852 | MJE18204 | SWITCH ™ NPN bipolaren Leistungstransistor für Electronic Light Ballast und Schaltnetzteil-Anwendungen | ON Semiconductor |
| 881853 | MJE18204-D | SWITCHMODE NPN zweipoliger Energie Transistor für elektronische helle Drossel-und Schaltung Spg.Versorgungsteil-Anwendungen ENERGIE TRANSISTOREN 5 AMPERE 1200 VOLT 35 und 75 WATT | ON Semiconductor |
| 881854 | MJE18206 | ENERGIE TRANSISTOREN 8 AMPERE 1200 VOLT 40 und 100 WATT | Motorola |
| 881855 | MJE18206 | SWITCH ™ NPN bipolaren Leistungstransistor für Electronic Light Ballast und Schaltnetzteil-Anwendungen | ON Semiconductor |
| 881856 | MJE182STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881857 | MJE18604 | ENERGIE TRANSISTOREN 3 AMPERE 1600 VOLT 100 WATT | Motorola |
| 881858 | MJE18604D2 | ENERGIE TRANSISTOREN 3 AMPERE 1600 VOLT 100 WATT | Motorola |
| 881859 | MJE200 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881860 | MJE200 | 5 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 25 VOLT 15 WATT | Motorola |
| 881861 | MJE200 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881862 | MJE200 | Energie 5A 25V NPN | ON Semiconductor |
| 881863 | MJE200 | 40 V, 5 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
| 881864 | MJE200-D | Ergänzende Silikon-Energie Plastiktransistoren | ON Semiconductor |
| 881865 | MJE200STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881866 | MJE200TSTU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881867 | MJE210 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881868 | MJE210 | TRANSISTOR DES SILIKON-PNP | ST Microelectronics |
| 881869 | MJE210 | 5 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 25 VOLT 15 WATT | Motorola |
| 881870 | MJE210 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881871 | MJE210 | Energie 5A 25V PNP | ON Semiconductor |
| 881872 | MJE210 | -40 V, -5 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
| 881873 | MJE210 | SILICON PNP-Transistor | SGS Thomson Microelectronics |
| 881874 | MJE210STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881875 | MJE210T | Energie 5A 25V PNP | ON Semiconductor |
| 881876 | MJE220 | NPN SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 881877 | MJE220 | NPN SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 881878 | MJE221 | NPN SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 881879 | MJE221 | NPN SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 881880 | MJE222 | NPN SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
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