| Nr. | Teilname | Beschreibung | Hersteller |
| 881961 | MJE3055T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881962 | MJE3055T | ENERGIE TRANSISTORS(10A, 60v, 75w) | MOSPEC Semiconductor |
| 881963 | MJE3055T | SILIKON-EPITAXIAL- PLANARER TRANSISTOR | Wing Shing Computer Components |
| 881964 | MJE3055T | 10 AMPERE-ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN 60 VOLT 75 WATT | Motorola |
| 881965 | MJE3055T | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881966 | MJE3055T | Energie 10A 60V Getrenntes NPN | ON Semiconductor |
| 881967 | MJE3055T | NPN Plastikenergie Transistor | Continental Device India Limited |
| 881968 | MJE3055T | 70 V, 10 A, NPN Silizium-Transistor | Samsung Electronic |
| 881969 | MJE3055T | NPN, Silizium Kunststoff-Leistungstransistor. Konzipiert für allgemeine Zwecke Schalt- und Verstärkeranwendung. Vceo (sus) = 60Vdc, Vcb = 70Vdc VEB = 5VDC, Ic = 10Adc, Pd = 75W. | USHA India LTD |
| 881970 | MJE3055TTU | NPN Silikon-Transistor | Fairchild Semiconductor |
| 881971 | MJE340 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881972 | MJE340 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881973 | MJE340 | COMPLEMETARY SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881974 | MJE340 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881975 | MJE340 | SILIKON DES 0.5 AMPERE-ENERGIE TRANSISTOR-NPN 300 VOLT 20 WATT | Motorola |
| 881976 | MJE340 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881977 | MJE340 | Mittlerer Energie NPN Silikon-Plastiktransistor | ON Semiconductor |
| 881978 | MJE340 | 20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0,500A Ic, 30-240 hFE. Ergänzende MJE350 | Continental Device India Limited |
| 881979 | MJE340 | 300 V, 500 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
| 881980 | MJE340-D | Mittlerer Energie NPN Silikon-Plastiktransistor | ON Semiconductor |
| 881981 | MJE340STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881982 | MJE341 | SILIKON DER 0.5 AMPERE-ENERGIE TRANSISTOR-NPN 150-200 VOLT 20 WATT | Motorola |
| 881983 | MJE341 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881984 | MJE3439 | SILIKON DES 0.3 AMPERE-ENERGIE TRANSISTOR-NPN 350 VOLT 15 WATT | Motorola |
| 881985 | MJE3439 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881986 | MJE3439 | Energie 1A 350V NPN | ON Semiconductor |
| 881987 | MJE3439-D | NPN Silikon Hoch-Spannung Energie Transistoren | ON Semiconductor |
| 881988 | MJE344 | SILIKON DER 0.5 AMPERE-ENERGIE TRANSISTOR-NPN 150-200 VOLT 20 WATT | Motorola |
| 881989 | MJE344 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881990 | MJE344 | Energie 1A 200V NPN | ON Semiconductor |
| 881991 | MJE344-D | Plastik-NPN Silikon Mittel-Energie Transistor | ON Semiconductor |
| 881992 | MJE3440 | TRANSISTOR DES SILIKON-NPN | ST Microelectronics |
| 881993 | MJE3440 | TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 881994 | MJE3440 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881995 | MJE350 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881996 | MJE350 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881997 | MJE350 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881998 | MJE350 | COMPLEMETARY SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881999 | MJE350 | SILIKON DES 0.5 AMPERE-ENERGIE TRANSISTOR-PNP 300 VOLT 20 WATT | Motorola |
| 882000 | MJE350 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| | | |
