| Nr. | Teilname | Beschreibung | Hersteller |
| 882081 | MJE702T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882082 | MJE702T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882083 | MJE703 | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882084 | MJE703 | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882085 | MJE703 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882086 | MJE703 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
| 882087 | MJE703STU | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882088 | MJE703T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882089 | MJE703T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882090 | MJE710 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882091 | MJE710 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Central Semiconductor |
| 882092 | MJE711 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882093 | MJE711 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Central Semiconductor |
| 882094 | MJE712 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882095 | MJE712 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Central Semiconductor |
| 882096 | MJE720 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882097 | MJE720 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Central Semiconductor |
| 882098 | MJE721 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882099 | MJE721 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Central Semiconductor |
| 882100 | MJE722 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882101 | MJE800 | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882102 | MJE800 | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882103 | MJE800 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882104 | MJE800 | Energie 4A 60V NPND | ON Semiconductor |
| 882105 | MJE800 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
| 882106 | MJE800STU | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882107 | MJE800T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882108 | MJE800T | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882109 | MJE800T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882110 | MJE801 | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882111 | MJE801 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882112 | MJE801 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
| 882113 | MJE801STU | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882114 | MJE801T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882115 | MJE801T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882116 | MJE802 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOR | ST Microelectronics |
| 882117 | MJE802 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOREN | SGS Thomson Microelectronics |
| 882118 | MJE802 | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882119 | MJE802 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882120 | MJE802 | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
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