| Nr. | Teilname | Beschreibung | Hersteller |
| 928641 | NE6500379 | 3W L/S-BAND ENERGIE GaAs MESFET | NEC |
| 928642 | NE6500379A | 3W L, S-BAND ENERGIE GaAs MESFET | NEC |
| 928643 | NE6500379A-T1 | 3W L, S-BAND ENERGIE GaAs MESFET | NEC |
| 928644 | NE6500496 | 4 W L, S-BAND ENERGIE GaAs Fet N-CHANNEL GaAs MES Fet | NEC |
| 928645 | NE650103M | NECS 10 W L | California Eastern Laboratories |
| 928646 | NE650103M | NECS 10 W L | California Eastern Laboratories |
| 928647 | NE650103M | 10 W, L & S-Band-Netz GaAsMESFET. | NEC |
| 928648 | NE6501077 | 10 W L, S-BAND ENERGIE GaAs Fet N-CHANNEL GaAs MES Fet | NEC |
| 928649 | NE650R279A | 0.2 W L, S-BAND ENERGIE GaAs MES Fet | NEC |
| 928650 | NE650R279A-T1 | 0.2 W L, S-BAND ENERGIE GaAs MES Fet | NEC |
| 928651 | NE650R479A | 0.4 W L, S-BAND ENERGIE GaAs MES Fet | NEC |
| 928652 | NE650R479A-T1 | 0.4 W L, S-BAND ENERGIE GaAs MES Fet | NEC |
| 928653 | NE6510179 | 1 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928654 | NE6510179A | 1 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928655 | NE6510179A-T1 | 1 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928656 | NE6510379A | 3 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928657 | NE6510379A-T1 | 3 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928658 | NE651R479A | 0.4 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928659 | NE651R479A-T1 | 0.4 W L-BAND ENERGIE GaAs HJ-FET | NEC |
| 928660 | NE661M04 | NPN SILIKON-RF TRANSISTOR FÜR NIEDRIG DIE GEGENWÄRTIGEN, NIEDRIGEN GERÄUSCHE, HIGH-GAIN VERSTÄRKUNG FLAT-LEAD 4-STIFTE DÜNNES SUPERMINI-MOLD | NEC |
| 928661 | NE661M04-T2 | NPN SILIKON-RF TRANSISTOR FÜR NIEDRIG DIE GEGENWÄRTIGEN, NIEDRIGEN GERÄUSCHE, HIGH-GAIN VERSTÄRKUNG FLAT-LEAD 4-STIFTE DÜNNES SUPERMINI-MOLD | NEC |
| 928662 | NE662M04 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928663 | NE662M04 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928664 | NE662M04-T2 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928665 | NE662M04-T2 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928666 | NE662M16 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928667 | NE662M16-T3 | NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928668 | NE663M04-T2 | NPN Silizium Hochfrequenz-Transistor. | NEC |
| 928669 | NE664M04 | MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928670 | NE664M04 | MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928671 | NE664M04-T2 | MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928672 | NE664M04-T2 | MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | NEC |
| 928673 | NE66719-T1 | NPN Silizium Hochfrequenz-Transistor. | NEC |
| 928674 | NE67400 | L auf Ku-Band rauscharmen Verstärker N-Kanal GaAsMESFET. Idss 20 bis 120 mA. | NEC |
| 928675 | NE67483B | L auf Ku-Band rauscharmen Verstärker N-Kanal GaAsMESFET. Idss 20 bis 120 mA. | NEC |
| 928676 | NE677M04 | NECs MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | California Eastern Laboratories |
| 928677 | NE677M04 | NECs MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | California Eastern Laboratories |
| 928678 | NE677M04-T2 | NECs MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | California Eastern Laboratories |
| 928679 | NE677M04-T2 | NECs MITTLERER ENERGIE NPN SILIKON-HOCHFREQUENZTRANSISTOR | California Eastern Laboratories |
| 928680 | NE677M04-T2 | Mittlerer Leistung NPN Silizium Hochfrequenz-Transistor. | NEC |
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