9011 | MC56U256NACA | MultiMediaCard Spezifikation | Samsung Electronic |
9012 | MC56U512HACA | MultiMediaCard Spezifikation | Samsung Electronic |
9013 | MC56U512HACA | MultiMediaCard Spezifikation | Samsung Electronic |
9014 | MC56U512NACA | MultiMediaCard Spezifikation | Samsung Electronic |
9015 | MC56U512NACA | MultiMediaCard Spezifikation | Samsung Electronic |
9016 | MJD127 | PNP Darlington-Transistor für hohe Gleichstromverstärkung, 100V, 8A | Samsung Electronic |
9017 | MJD127-1 | PNP Darlington-Transistor für hohe Gleichstromverstärkung, 100V, 8A | Samsung Electronic |
9018 | MJE170 | -60 V, -3 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9019 | MJE171 | -80 V, -1 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9020 | MJE172 | -100 V, -1 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9021 | MJE180 | 60 V, 3 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9022 | MJE181 | 60 V, 3 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9023 | MJE182 | 60 V, 3 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9024 | MJE200 | 40 V, 5 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9025 | MJE210 | -40 V, -5 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9026 | MJE2955T | -70 V, -10 A, PNP Silikon-Transistor | Samsung Electronic |
9027 | MJE3055T | 70 V, 10 A, NPN Silizium-Transistor | Samsung Electronic |
9028 | MJE340 | 300 V, 500 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9029 | MJE350 | -300 V, -500 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9030 | MJE700 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
9031 | MJE701 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
9032 | MJE702 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
9033 | MJE703 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
9034 | MJE800 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
9035 | MJE801 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
9036 | MJE802 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
9037 | MJE803 | 60 V, 5 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
9038 | MMBA811C5 | PNP (TREIBERTRANSISTOR) | Samsung Electronic |
9039 | MMBA811C6 | PNP EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
9040 | MMBA811C7 | PNP (TREIBERTRANSISTOR) | Samsung Electronic |
9041 | MMBA811C8 | PNP (TREIBERTRANSISTOR) | Samsung Electronic |
9042 | MMBA812M3 | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9043 | MMBA812M4 | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9044 | MMBA812M5 | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9045 | MMBA812M6 | PNP EPITAXIAL- PLANARER TRANSISTOR(General Zweck-Transistor) | Samsung Electronic |
9046 | MMBA812M7 | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9047 | MMBAB11C6 | PNP (TREIBERTRANSISTOR) | Samsung Electronic |
9048 | MMBC1009F1 | AM/FM RF VERSTÄRKER-TRANSISTOR | Samsung Electronic |
9049 | MMBC1009F2 | NPN (AM/FM RF VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9050 | MMBC1009F3 | NPN (AM/FM RF VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9051 | MMBC1009F4 | NPN (AM/FM RF VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9052 | MMBC1009F5 | NPN (AM/FM RF VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9053 | MMBC1622D6 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9054 | MMBC1622D7 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9055 | MMBC1622D8 | 40 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9056 | MMBC1622DF | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9057 | MMBC1623L3 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9058 | MMBC1623L4 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9059 | MMBC1623L5 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9060 | MMBC1623L6 | 50 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9061 | MMBC1623L7 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9062 | MMBC1626L6 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9063 | MMBR5179 | RF VERSTÄRKER-TRANSISTOR | Samsung Electronic |
9064 | MMBT2222 | 60 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9065 | MMBT2907 | 60 V, 600 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9066 | MMBT3903 | NPN (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9067 | MMBT4123 | NPN (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9068 | MMBT4124 | 30 V, 200 mA, NPN epitaktischen Siliziumtransistor | Samsung Electronic |
9069 | MMBT4125 | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9070 | MMBT4126 | -25 V, -200 Ma, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9071 | MMBT5086 | PNP (NIEDRIGER GERÄUSCH-TRANSISTOR) | Samsung Electronic |
9072 | MMBT5087 | 50 V, 50 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9073 | MMBT5088 | 35 V, 50 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9074 | MMBT5089 | 30 V, 50 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9075 | MMBT5550 | 160 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9076 | MMBT6427 | 40 V, 500 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9077 | MMBT6428 | 60 V, 200 mA, NPN epitaktischen Siliziumtransistor | Samsung Electronic |
9078 | MMBT6429 | NPN (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9079 | MMBTA70 | PNP (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9080 | MPS2222 | 60 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9081 | MPS2222A | 75 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9082 | MPS2907 | 60 V, 600 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9083 | MPS2907A | PNP (UNIVERSELLER TRANSISTOR) | Samsung Electronic |
9084 | MPS3702 | 40 V, 600 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9085 | MPS3703 | 50 V, 600 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9086 | MPS3704 | 50 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9087 | MPS3705 | 50 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9088 | MPS3706 | 40 V, 600 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9089 | MPS4249 | PNP (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9090 | MPS4250 | 40 V PNP epitaktischen Siliziumtransistor | Samsung Electronic |
9091 | MPS4250A | PNP (VERSTÄRKER-TRANSISTOR) | Samsung Electronic |
9092 | MPS5172 | 25 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9093 | MPS5179 | 20 V, 50 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9094 | MPS6513 | 30 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9095 | MPS6517 | 40 V, 100 mA, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
9096 | MPS6520 | 40 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9097 | MPS6521 | 40 V, 100 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
9098 | MPS6522 | 25 V, 100 mA, PNP epitaktischen Siliziumtransistor | Samsung Electronic |
9099 | MPS6523 | 25 V, 100 mA, PNP epitaktischen Siliziumtransistor | Samsung Electronic |
9100 | MPS6560 | 25 V, 500 mA, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
| | | |