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Datenblaetter Gefunden :: 79397 English Version for this page Version française pour cette page Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version Romanian Version
Nr.TeilnameBeschreibungHersteller
61901STB20N95K5N-Kanal 950 V, 0.275 Ohm typ., 17.5 Eine Zener-geschützt SuperMESH (TM) 5 Power MOSFET in D2PAK VerpackungST Microelectronics
61902STB20NE06N-CHANNEL 60V -0.06 OHM - 20A D2PAK STRIPFET ENERGIE MOSFETST Microelectronics
61903STB20NE06LN-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET ENERGIE MOSFETST Microelectronics
61904STB20NE06LT4N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET ENERGIE MOSFETST Microelectronics
61905STB20NK50ZN-CHANNEL 500V - 0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 ZENER-PROTECTED SUPERMESH MOSFETST Microelectronics
61906STB20NK50Z-SN-CHANNEL 500V - 0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 ZENER-PROTECTED SUPERMESH MOSFETST Microelectronics
61907STB20NK50ZT4N-CHANNEL 500V - 0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 ZENER-PROTECTED SUPERMESH MOSFETST Microelectronics
61908STB20NM50N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFETST Microelectronics
61909STB20NM50-1N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFETST Microelectronics
61910STB20NM50FDN-CHANNEL 500V 0.20 ENERGIE MOSFET DES OHM-20A D2PAK FDMESHST Microelectronics



61911STB20NM50FD-1N-CHANNEL 500V 0.22 ENERGIE MOSFET DES OHM-20A TO-220/I2PAK FDMESHST Microelectronics
61912STB20NM50FDT4N-CHANNEL 500V 0.22 ENERGIE MOSFET DES OHM-20A TO-220/TO-220FP/D2PAK FDMESHST Microelectronics
61913STB20NM50T4N-CHANNEL 550V @ Tjmax - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH MosfetST Microelectronics
61914STB20NM60N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFETST Microelectronics
61915STB20NM60-1N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFETST Microelectronics
61916STB20NM60AN-CHANNEL 600V - 0.25 OHM - 20A I2PAK/TO-220/TO-220FP MDMESH MOSFETST Microelectronics
61917STB20NM60A-1N-CHANNEL 600V - 0.25 OHM - 20A I2PAK/TO-220/TO-220FP MDMESH MOSFETST Microelectronics
61918STB20NM60DN-Kanal 600V - 0.26Y - 20A - D2PAKST Microelectronics
61919STB20NM60T4N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFETST Microelectronics
61920STB20PF75P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II ENERGIE MosfetST Microelectronics
61921STB20PF75T4P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II ENERGIE MosfetST Microelectronics
61922STB210NF02N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFETST Microelectronics
61923STB210NF02-1N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFETST Microelectronics
61924STB210NF02T4N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFETST Microelectronics
61925STB21N65M5N-Kanal 650 V, 0.150 Ohm, 17 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAKST Microelectronics
61926STB21N90K5N-Kanal 900 V, 0,25 Ohm, 18,5 A D2PAK Zener-geschützt SuperMESH (TM) 5 Power MOSFETST Microelectronics
61927STB21NK50ZN-Kanal 500 V - 0,23 Y - 17 A - D2PAK Zener-geschützt superMESHTM MOSFETST Microelectronics
61928STB21NM60NDN-Kanal 600 V, 0,17 Ohm typ. 17 A, FDmesh (TM) II Power MOSFET (Whit schnelle Diode) in D2PAK VerpackungST Microelectronics
61929STB22NE03LN-CHANNEL 30V - 0.034 OHM - 22A D2PAK STRIPFET ENERGIE MOSFETST Microelectronics
61930STB22NM50N-CHANNEL 500 V - 0.16 OHM - 20 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE MosfetST Microelectronics
61931STB22NM50-1N-CHANNEL 500 V - 0.16 OHM - 20 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE MosfetST Microelectronics
61932STB22NM60N-CHANNEL 600 V - 0.19 OHM - 22 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE MosfetST Microelectronics
61933STB22NM60-1N-CHANNEL 600 V - 0.19 OHM - 22 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE MosfetST Microelectronics
61934STB22NM60NN-Kanal 600 V, 0,2 Ohm, 16 A MDmesh (TM) II Power MOSFET in D2PAKST Microelectronics
61935STB22NS25ZN-CHANNEL 250V 0.13 OHM 22A TO-220/D2PAK ZENER-PROTECTED INEINANDERGREIFEN-TESTBLATTMOSFETST Microelectronics
61936STB22NS25ZT4N-CHANNEL 250V 0.13 OHM 22A TO-220/D2PAK ZENER-PROTECTED INEINANDERGREIFEN-TESTBLATTMOSFETST Microelectronics
61937STB23NM50NN-Kanal 500 V, 0.162 Ohm, 17 A, D2PAK MDmesh (TM) II Power MOSFETST Microelectronics
61938STB23NM60NDN-Kanal 600 V, 0.150 Ohm, 19,5 A, FDmesh (TM) II Power MOSFET (mit schnellen Diode) D2PAKST Microelectronics
61939STB24N60DM2N-Kanal 600 V, 0.175 Ohm typ. 18 A FDmesh II Plus (TM) niedriger Qg Power MOSFET in D2PAK VerpackungST Microelectronics
61940STB24N60M2N-Kanal 600 V, 0.168 Ohm typ. 18 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in D2PAK VerpackungST Microelectronics
61941STB24NF10N-CHANNEL 100V - 0.055 OHM - 26A TO-220/D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFETST Microelectronics
61942STB24NF10T4N-CHANNEL 100V - 0.055 OHM - 26A TO-220/D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFETST Microelectronics
61943STB24NM60NN-Kanal 600 V, 0.168 Ohm, 17 A MDmesh (TM) II Power MOSFET D2PAKST Microelectronics
61944STB24NM65NN-Kanal 650 V - 0,16 Y - 19 A - TO-220 / FP - D2 / I2PAK - TO-247 der zweiten Generation MDmesh ™ Leistungs-MOSFETST Microelectronics
61945STB25N80K5N-Kanal 800 V, 0,19 Ohm typ. 19,5 A SuperMESH (TM) 5 Power MOSFET in D2PAK VerpackungST Microelectronics
61946STB25NM50NN-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61947STB25NM50N-1N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61948STB25NM50NT4N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61949STB25NM60NN-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61950STB25NM60N-1N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61951STB25NM60NDN-Kanal 600 V, 0,13 Ohm typ. 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK VerpackungST Microelectronics
61952STB25NM60NT4N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh MosfetST Microelectronics
61953STB26NM60NN-Kanal 600 V, 0.135 Ohm typ. 20 A MDmesh (TM) II Power MOSFET in D2PAK VerpackungST Microelectronics
61954STB26NM60NDN-Kanal 600 V, 0.145 Ohm typ. 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK VerpackungST Microelectronics
61955STB270N4F3N-Kanal-40 V, 1,6 mOhm typ., 160 A STripFET (TM) III Power-MOSFETs im D2PAK-PaketST Microelectronics
61956STB27NM60NDN-Kanal 600 V, 0,13 Ohm, 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAKST Microelectronics
61957STB28N60M2N-Kanal 600 V, 0.135 Ohm typ. 22 A MDmesh II Plus (TM) niedriger Qg Leistungs-MOSFETs in D2PAK VerpackungST Microelectronics
61958STB28NM50NN-Kanal 500 V, 0.135 Ohm typ. 21 A MDmesh (TM) II Power MOSFET in D2PAK VerpackungST Microelectronics
61959STB28NM60NDN-Kanal 600 V, 0.120 Ohm typ. 24 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK VerpackungST Microelectronics
61960STB2N62K3N-Kanal 620 V, 3 Ohm, 2,2 A, D2PAK SuperMESH3 (TM) Power MOSFETST Microelectronics
61961STB3015N - FÜHRUNG 30V - 0.013 Ohm - 40A - D2PAK/TO-220 STripFETO ENERGIEMOSFETST Microelectronics
61962STB3015N - FÜHRUNG 30V - 0.013 Ohm - 40A - D2PAK/TO-220 STripFETO ENERGIEMOSFETST Microelectronics
61963STB3015LN-CHANNEL 30V - 0.013 OHM - 40A D2PAK/TO-220 STRIPFET ENERGIE MOSFETST Microelectronics
61964STB30N10ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-INST Microelectronics
61965STB30N65M5N-Kanal 650 V, 0.125 Ohm, 22 A, MDmesh (TM) V Power MOSFET D2PAKST Microelectronics
61966STB30NE06LN-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET ENERGIE MOSFETST Microelectronics
61967STB30NF10N-CHANNEL 100V 0.038 GATTER-AUFLADUNG STRIPFET DES OHM-35A TO-220/TO-220FP/D2PAK NIEDRIGER ENERGIE II MOSFETST Microelectronics
61968STB30NF10T4N-CHANNEL 100V 0.038 GATTER-AUFLADUNG STRIPFET DES OHM-35A TO-220/TO-220FP/D2PAK NIEDRIGER ENERGIE II MOSFETST Microelectronics
61969STB30NF20N-Kanal 200 V, 0.065 Ohm, 30 A, D2PAK STripFET (TM) Power MOSFETST Microelectronics
61970STB30NF20LN-Kanal 200 V, 0.065 Ohm, 30 A, D2PAK STripFET (TM) Power MOSFETST Microelectronics
61971STB30NS15N-CHANNEL 150V - 0.075 OHM - 30A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFETST Microelectronics
61972STB31N65M5N-Kanal 650 V, 0.124 Ohm, 22 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK VerpackungST Microelectronics
61973STB32N65M5N-Kanal 650 V, 0.095 Ohm, 24 A, MDmesh (TM) V-Leistungs-MOSFETs in D2PAKST Microelectronics
61974STB32NM50NN-Kanal 500 V, 0,1 Ohm typ. 22 A MDmesh (TM) II Power MOSFET in D2PAK VerpackungST Microelectronics
61975STB33N60M2N-Kanal 600 V, 0.108 Ohm typ. 26 A MDmesh II Plus (TM) niedriger Qg Leistungs-MOSFETs in D2PAK VerpackungST Microelectronics
61976STB34N65M5N-Kanal 650 V, 0,09 Ohm, 28 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK VerpackungST Microelectronics
61977STB34NM60NN-Kanal 600 V, 0.092 Ohm, 29 A, MDmesh (TM) II Power MOSFET in D2PAKST Microelectronics
61978STB34NM60NDN-Kanal 600 V, 0.097 Ohm, 29 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) D2PAKST Microelectronics
61979STB35N65M5N-Kanal 650 V, 0.085 Ohm, 27 A, MDmesh (TM) V-Leistungs-MOSFETs in D2PAKST Microelectronics
61980STB35NF10N-CHANNEL 100V 0.030 GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET DES OHM-40A TO-220/D2PAK NIEDRIGERST Microelectronics
61981STB35NF10T4N-CHANNEL 100V 0.030 GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET DES OHM-40A TO-220/D2PAK NIEDRIGERST Microelectronics
61982STB36NF02LN-CHANNEL 20V - 0.016 OHM - 36A - D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFETST Microelectronics
61983STB36NF03LN-CHANNEL 30V - 0.015 OHM - 36A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFETST Microelectronics
61984STB36NF03LT4N-CHANNEL 30V - 0.015 OHM - 36A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFETST Microelectronics
61985STB36NF06LN-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II ENERGIE MOSFETST Microelectronics
61986STB36NF06LT4N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II ENERGIE MOSFETST Microelectronics
61987STB36NM60NAutomotive-N-Kanal 600 V, 0.092 Ohm typ. 29 A MDmesh (TM) II Power MOSFET in D2PAK VerpackungST Microelectronics
61988STB36NM60NDAutomotive-N-Kanal 600 V, 0.097 Ohm typ. 29 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK VerpackungST Microelectronics
61989STB38N65M5N-Kanal 650 V, 0.073 Ohm typ. 30 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK VerpackungST Microelectronics
61990STB3N60-1ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-INST Microelectronics
61991STB3NA80N-CHANNEL VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTORST Microelectronics
61992STB3NB60N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH MosfetST Microelectronics
61993STB3NB60T4N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH MosfetST Microelectronics
61994STB3NC60N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFETST Microelectronics
61995STB3NC60T4N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFETST Microelectronics
61996STB3NC90N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Schützte PowerMESH¢âIIIMosfetST Microelectronics
61997STB3NC90N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Schützte PowerMESH¢âIIIMosfetST Microelectronics
61998STB3NC90ZN-CHANNEL 900V 3.2 OHM3.5A D2PAK ZENER-PROTECTED POWERMESH III MOSFETST Microelectronics
61999STB3NC90Z-1N-CHANNEL 900V 3.2 OHM3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETST Microelectronics
62000STB3NK60ZN-CHANNEL 600V - 3.3 OHM - 2.4A TO-220/TO-220FP/D2PAK/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFETST Microelectronics



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