7111 | TC514410AZ-10 | 100 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7112 | TC514410AZ-60 | 60 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7113 | TC514410AZ-70 | 70 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7114 | TC514410AZ-80 | 80 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7115 | TC514410J-10 | 100 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7116 | TC514410J-80 | 80 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7117 | TC514410Z-10 | 100 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7118 | TC514410Z-80 | 80 ns, 4-Bit-Generierung dynamischer RAM | TOSHIBA |
7119 | TC51832 | Silikon-GatterWort CMOS/32768 x 8 Bit CMOS statisches PSEUDORAM | TOSHIBA |
7120 | TC51832F-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7121 | TC51832F-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7122 | TC51832F-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7123 | TC51832FL-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7124 | TC51832FL-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7125 | TC51832FL-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7126 | TC51832P-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7127 | TC51832P-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7128 | TC51832P-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7129 | TC51832PL-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7130 | TC51832PL-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7131 | TC51832PL-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7132 | TC51832SP-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7133 | TC51832SP-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7134 | TC51832SP-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7135 | TC51832SPL-10 | 100 ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7136 | TC51832SPL-12 | 120ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7137 | TC51832SPL-85 | 85ns; V (in / out / dd): -1 bis + 7 V; 600MW; 50mA; 32.768 Wort x 8-Bit CMOS pseudostatische RAM | TOSHIBA |
7138 | TC51WHM516AXBN | SRAM - Pseudo-SRAM | TOSHIBA |
7139 | TC51WHM516AXBN65 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7140 | TC51WHM516AXBN70 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7141 | TC51WHM516AXGN65 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7142 | TC51WHM516AXGN70 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7143 | TC51WHM616AXBN | SRAM - Pseudo-SRAM | TOSHIBA |
7144 | TC51WHM616AXBN65 | 4.194.304-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7145 | TC51WHM616AXBN70 | 4.194.304-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7146 | TC51WKM516AXBN | SRAM - Pseudo-SRAM | TOSHIBA |
7147 | TC51WKM516AXBN75 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7148 | TC51WKM516AXGN65 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7149 | TC51WKM516AXGN70 | 2.097.152-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7150 | TC51WKM616AXBN | SRAM - Pseudo-SRAM | TOSHIBA |
7151 | TC51WKM616AXBN75 | 4.194.304-WORD DURCH 16-BIT CMOS STATISCHES PSEUDORAM | TOSHIBA |
7152 | TC528128BJ-10 | 100 ns; V (cc): -1 bis + 7 V; V (in / out); -1,0 Bis + 7,0 V; 1W; 50mA; Silizium-CMOS verwöhnt 131.072 Wörter x 8 Bit Multi DRAMA | TOSHIBA |
7153 | TC528128BJ-80 | 80ns; V (cc): -1 bis + 7 V; V (in / out); -1,0 Bis + 7,0 V; 1W; 50mA; Silizium-CMOS verwöhnt 131.072 Wörter x 8 Bit Multi DRAMA | TOSHIBA |
7154 | TC528128BZ-10 | 100 ns; V (cc): -1 bis + 7 V; V (in / out); -1,0 Bis + 7,0 V; 1W; 50mA; Silizium-CMOS verwöhnt 131.072 Wörter x 8 Bit Multi DRAMA | TOSHIBA |
7155 | TC528128BZ-80 | 80ns; V (cc): -1 bis + 7 V; V (in / out); -1,0 Bis + 7,0 V; 1W; 50mA; Silizium-CMOS verwöhnt 131.072 Wörter x 8 Bit Multi DRAMA | TOSHIBA |
7156 | TC528267 | 262144 Wörter x 8 Bits Multiport DRAM | TOSHIBA |
7157 | TC531001CF | 150ns; V (dd): -0,5 bis + 7 V; 1M Bit (128K Wort x 8 Bit) CMOS MASK ROM | TOSHIBA |
7158 | TC531001CP | 120ns; V (dd): -0,5 bis + 7 V; 1M Bit (128K Wort x 8 Bit) CMOS MASK ROM | TOSHIBA |
7159 | TC531024F-12 | 120ns; 5V; 1M Bit (65.536 Wort x 16bit) CMOS MASK ROM | TOSHIBA |
7160 | TC531024F-15 | 150ns; 5V; 1M Bit (65.536 Wort x 16bit) CMOS MASK ROM | TOSHIBA |
7161 | TC531024P-12 | 120ns; 5V; 1M Bit (65.536 Wort x 16bit) CMOS MASK ROM | TOSHIBA |
7162 | TC531024P-15 | 150ns; 5V; 1M Bit (65.536 Wort x 16bit) CMOS MASK ROM | TOSHIBA |
7163 | TC54256AF | 32768 Wort x 8-Bit-CMOC einmal programmierbaren Nur-Lese-Speicher, 200ns | TOSHIBA |
7164 | TC54256AP | 32768 Wort x 8-Bit-CMOC einmal programmierbaren Nur-Lese-Speicher, 200ns | TOSHIBA |
7165 | TC54H1024F-10 | 100 ns; V (cc): -0,6 bis + 7 V; 1.5W; 65.536 Wort x 16 Bit einmal programmierbaren Nurlesespeicher | TOSHIBA |
7166 | TC54H1024F-85 | 85 ns; V (cc): -0,6 bis + 7 V; 1.5W; 65.536 Wort x 16 Bit einmal programmierbaren Nurlesespeicher | TOSHIBA |
7167 | TC54H1024P-10 | 100 ns; V (cc): -0,6 bis + 7 V; 1.5W; 65.536 Wort x 16 Bit einmal programmierbaren Nurlesespeicher | TOSHIBA |
7168 | TC54H1024P-85 | 85 ns; V (cc): -0,6 bis + 7 V; 1.5W; 65.536 Wort x 16 Bit einmal programmierbaren Nurlesespeicher | TOSHIBA |
7169 | TC5504A | 4096 Wort x 1 Bit CMOS Static RAM | TOSHIBA |
7170 | TC551001 | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7171 | TC551001 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7172 | TC551001 | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7173 | TC551001 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7174 | TC551001 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7175 | TC551001 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7176 | TC551001BFL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7177 | TC551001BFL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7178 | TC551001BFL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7179 | TC551001BFL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7180 | TC551001BFTL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7181 | TC551001BFTL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7182 | TC551001BFTL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7183 | TC551001BFTL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7184 | TC551001BPL | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7185 | TC551001BPL | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7186 | TC551001BPL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7187 | TC551001BPL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7188 | TC551001BPL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7189 | TC551001BPL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7190 | TC551001BTRL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7191 | TC551001BTRL-70L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7192 | TC551001BTRL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7193 | TC551001BTRL-85L | SILIKON-GATTER CMOS 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7194 | TC551001CF-55 | TC551001CP55 | TOSHIBA |
7195 | TC551001CF-55 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7196 | TC551001CF-55 | TC551001CP55 | TOSHIBA |
7197 | TC551001CF-55 | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7198 | TC551001CF-55L | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
7199 | TC551001CF-55L | TC551001CP55 | TOSHIBA |
7200 | TC551001CF-55L | 131.072 WORD x 8 BITSTATIC-RAM | TOSHIBA |
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