Nr. | Nombre de la Parte | Descripción | Fabricante |
1165601 | STGB7NC60HD | N-canal 7A - 600V - To-220fp/d2pak POWERMESH MUY RÁPIDO IGBT | ST Microelectronics |
1165602 | STGB7NC60HDT4 | N-canal 7A - 600V - To-220fp/d2pak POWERMESH MUY RÁPIDO IGBT | ST Microelectronics |
1165603 | STGB7NC60KD | El N-canal 7A - 600V - CIRCUITO CORTO De To-220/to-220fp/d2pak CLASIFICÓ PowerMESH "IGBT | ST Microelectronics |
1165604 | STGB7NC60KDT4 | El N-canal 7A - 600V - CIRCUITO CORTO De To-220/to-220fp/d2pak CLASIFICÓ PowerMESH "IGBT | ST Microelectronics |
1165605 | STGB8NC60KD | Nuevo cortocircuito accidentado serie "K" | ST Microelectronics |
1165606 | STGB8NC60KDT4 | Nuevo cortocircuito accidentado serie "K" | ST Microelectronics |
1165607 | STGD10HF60KD | Automotive grado 10 A, 600 V cortocircuito IGBT resistente con ultrarápido de diodo | ST Microelectronics |
1165608 | STGD10NC60H | Canal N 10 A, 600 V, DPAK PowerMESH muy rápido (TM) IGBT | ST Microelectronics |
1165609 | STGD10NC60HD | Serie muy rápida "H" | ST Microelectronics |
1165610 | STGD10NC60HDT4 | Serie muy rápida "H" | ST Microelectronics |
1165611 | STGD10NC60HT4 | Canal N 10 A, 600 V, DPAK PowerMESH muy rápido (TM) IGBT | ST Microelectronics |
1165612 | STGD10NC60KD | 10 A, 600 V cortocircuito IGBT accidentado | ST Microelectronics |
1165613 | STGD10NC60KDT4 | 10 A, 600 V cortocircuito IGBT accidentado | ST Microelectronics |
1165614 | STGD14NC60K | Nuevo cortocircuito accidentado serie "K" | ST Microelectronics |
1165615 | STGD14NC60KT4 | Nuevo cortocircuito accidentado serie "K" | ST Microelectronics |
1165616 | STGD18N40LZ | EAS 180 mJ - 390 V - IGBT fijada internamente | ST Microelectronics |
1165617 | STGD18N40LZ-1 | EAS 180 mJ - 390 V - IGBT fijada internamente | ST Microelectronics |
1165618 | STGD18N40LZT4 | EAS 180 mJ - 390 V - IGBT fijada internamente | ST Microelectronics |
1165619 | STGD19N40LZ | Automotive grado 390 V fijada internamente IGBT ESCIS 180 mJ | ST Microelectronics |
1165620 | STGD20N40LZ | Automotive grado 390 V fijada internamente IGBT ESCIS 300 mJ | ST Microelectronics |
1165621 | STGD3HF60HD | 4.5 A, IGBT 600 V muy rápido con ultrarápido de diodo | ST Microelectronics |
1165622 | STGD3NB60F | N-canal Á - 600V To-220/to-220fp/dpak/d2pak POWERMESH IGBT | ST Microelectronics |
1165623 | STGD3NB60FT4 | N-canal Á - 600V To-220/to-220fp/dpak/d2pak POWERMESH IGBT | ST Microelectronics |
1165624 | STGD3NB60H | N-canal Á - 600V DPAK POWERMESH IGBT | ST Microelectronics |
1165625 | STGD3NB60H | N-canal Á - 600V DPAK POWERMESH IGBT | SGS Thomson Microelectronics |
1165626 | STGD3NB60H | N-canal Á - 600V To-252 PowerMESH ] IGBT | SGS Thomson Microelectronics |
1165627 | STGD3NB60HD | N-canal Á 600V DPAK POWERMESH IGBT | ST Microelectronics |
1165628 | STGD3NB60HDT4 | N-canal Á 600V DPAK POWERMESH IGBT | ST Microelectronics |
1165629 | STGD3NB60HT4 | N-canal Á 600V DPAK POWERMESH IGBT | ST Microelectronics |
1165630 | STGD3NB60K | N-canal 600V Á To-220/to-220fp/dpak/d2pak POWERMESH IGBT | ST Microelectronics |
1165631 | STGD3NB60K | N-canal 600V Á To-220/to-220fp/dpak/d2pak POWERMESH IGBT | SGS Thomson Microelectronics |
1165632 | STGD3NB60K | PRUEBA POWERMESH IGBT del CIRCUITO CORTO Del N-canal 600V Á DPAK | SGS Thomson Microelectronics |
1165633 | STGD3NB60KT4 | N-canal 600V Á To-220/to-220fp/dpak/d2pak POWERMESH IGBT | ST Microelectronics |
1165634 | STGD3NB60M | N-canal 600V Á To-220/dpak POWERMESH IGBT | ST Microelectronics |
1165635 | STGD3NB60MT4 | N-canal 600V Á To-220/dpak POWERMESH IGBT | ST Microelectronics |
1165636 | STGD3NB60S | N-canal Á - 600V To-220/dpak POWERMESH IGBT | ST Microelectronics |
1165637 | STGD3NB60S | N-canal Á - ACOPLAMIENTO IGBT De la Energía De 600V DPAK | SGS Thomson Microelectronics |
1165638 | STGD3NB60SD | N-canal Á - 600V DPAK POWERMESH IGBT | ST Microelectronics |
1165639 | STGD3NB60SD | N-canal Á - ACOPLAMIENTO IGBT De la Energía De 600V DPAK | SGS Thomson Microelectronics |
1165640 | STGD3NB60SD-1 | N-canal Á - 600V - DPAK PowerMESH "IGBT | ST Microelectronics |
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