Nr. | Nombre de la Parte | Descripción | Fabricante |
1165841 | STGW12NB60H | 1À Del N-canal - 600V To-247 POWERMESH IGBT | SGS Thomson Microelectronics |
1165842 | STGW12NB60H | 1À Del N-canal - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165843 | STGW12NB60HD | 1À Del N-canal - 600V To-247 POWERMESH IGBT | ST Microelectronics |
1165844 | STGW12NB60HD | 1À Del N-canal - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165845 | STGW15H120DF2 | Puerta Trench campo parar IGBT, serie H 1200 V, 15 A alta velocidad | ST Microelectronics |
1165846 | STGW15H120F2 | Puerta Trench campo parar IGBT, serie H 1200 V, 15 A alta velocidad | ST Microelectronics |
1165847 | STGW15M120DF3 | Puerta Trench campo parar IGBT, serie M 1200 V, 15 A baja pérdida | ST Microelectronics |
1165848 | STGW19NC60H | IGBT muy rápido | ST Microelectronics |
1165849 | STGW19NC60HD | 19 A, 600 V, IGBT muy rápido con ultrarápido de diodo | ST Microelectronics |
1165850 | STGW19NC60W | Serie ultra rápido "W" | ST Microelectronics |
1165851 | STGW19NC60WD | Serie ultra rápido "W" | ST Microelectronics |
1165852 | STGW20H60DF | 600 V, 20 A alta velocidad de la puerta del foso campo parar IGBT | ST Microelectronics |
1165853 | STGW20H65FB | Puerta Trench campo parar IGBT, serie HB 650 V, 20 A alta velocidad | ST Microelectronics |
1165854 | STGW20IH125DF | 1250 V, 20 A IH puerta zanja serie campo parar IGBT | ST Microelectronics |
1165855 | STGW20NB60H | N-canal 20A - 600V To-247 POWERMESH IGBT | ST Microelectronics |
1165856 | STGW20NB60H | N-canal 20A - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165857 | STGW20NB60HD | N-canal 20A - 600V To-247 POWERMESH IGBT | ST Microelectronics |
1165858 | STGW20NB60HD | N-canal 20A - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165859 | STGW20NB60K | PRUEBA POWERMESH IGBT del CIRCUITO CORTO Del N-canal 20A 600V To-247 | ST Microelectronics |
1165860 | STGW20NB60K | PRUEBA POWERMESH IGBT del CIRCUITO CORTO Del N-canal 20A 600V To-247 | SGS Thomson Microelectronics |
1165861 | STGW20NB60KD | PRUEBA POWERMESH IGBT del CIRCUITO CORTO Del N-canal 20A 600V To-247 | ST Microelectronics |
1165862 | STGW20NC60V | N-canal 30A - 600V To-220/to-247 HYPERFAST POWERMESH IGBT | ST Microelectronics |
1165863 | STGW20NC60VD | N-canal 30A - 600V To-247 HYPERFAST POWERMESH IGBT | ST Microelectronics |
1165864 | STGW20V60DF | Puerta Trench campo parar IGBT, serie V 600 V, 20 A muy alta velocidad | ST Microelectronics |
1165865 | STGW20V60F | Puerta Trench campo parar IGBT, serie V 600 V, 20 A muy alta velocidad | ST Microelectronics |
1165866 | STGW25H120DF2 | Puerta Trench campo parar IGBT, serie H 1200 V, 25 A alta velocidad | ST Microelectronics |
1165867 | STGW25H120F2 | Puerta Trench campo parar IGBT, serie H 1200 V, 25 A alta velocidad | ST Microelectronics |
1165868 | STGW25M120DF3 | Puerta Trench campo parar IGBT, serie M 1200 V, 25 A baja pérdida | ST Microelectronics |
1165869 | STGW28IH125DF | 1250 V, 25 A IH puerta zanja serie campo parar IGBT | ST Microelectronics |
1165870 | STGW30H60DF | 600 V, 30 A alta velocidad de la puerta del foso campo parar IGBT | ST Microelectronics |
1165871 | STGW30H60DFB | Puerta Trench campo parar IGBT, serie HB 600 V, 30 A alta velocidad | ST Microelectronics |
1165872 | STGW30H65FB | Puerta Trench campo parar IGBT, serie HB 650 V, 30 A alta velocidad | ST Microelectronics |
1165873 | STGW30N120KD | 30 A, 1200 V cortocircuito IGBT resistente con ultrarápido de diodo | ST Microelectronics |
1165874 | STGW30NB60H | N-canal 30A - 600V To-247 POWERMESH IGBT | ST Microelectronics |
1165875 | STGW30NB60H | N-canal 30A - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165876 | STGW30NB60HD | N-canal 30A - 600V To-247 POWERMESH IGBT | ST Microelectronics |
1165877 | STGW30NB60HD | N-canal 30A - 600V To-247 PowerMESH IGBT | SGS Thomson Microelectronics |
1165878 | STGW30NC120HD | 1200V, 30A | ST Microelectronics |
1165879 | STGW30NC60KD | Nuevo cortocircuito accidentado serie "K" | ST Microelectronics |
1165880 | STGW30NC60VD | 40 A, 600 V, IGBT muy rápido con ultrarápido de diodo | ST Microelectronics |
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