Nr. | Nombre de la Parte | Descripción | Fabricante |
415801 | FG4000GX-90DA | TIPO DEL PAQUETE DE PRENSA DEL USO DEL INVERSOR DE ALTAENERGÍA | Powerex Power Semiconductors |
415802 | FG4000HX-90DS | TIPO Turn-off del PAQUETE de PRENSA del USO del INVERSOR de ALTA ENERGÍA de los TIRISTORES de la PUERTA de MITSUBISHI | Mitsubishi Electric Corporation |
415803 | FG50N06L | MOSFETs Llanos De la Energía Del N-Canal De 50A/De 60V/0,022 Ohmios/Lógica | Intersil |
415804 | FG6000AU-120D | TIPO Turn-off del PAQUETE de PRENSA del USO del INVERSOR de ALTA ENERGÍA de los TIRISTORES de la PUERTA de MITSUBISHI | Mitsubishi Electric Corporation |
415805 | FG654301 | Pequeños MOSFETs de señal | Panasonic |
415806 | FG694301 | Pequeños MOSFETs de señal | Panasonic |
415807 | FG6K4206 | MOSFETs para convertidor DC-DC | Panasonic |
415808 | FGA15N120AND | Discreto, NPT IGBT con el diodo | Fairchild Semiconductor |
415809 | FGA15N120ANDTU | Discreto, NPT IGBT con el diodo | Fairchild Semiconductor |
415810 | FGA15N120ANTDTU | 1200V, 15A, NPT Trench IGBT | Fairchild Semiconductor |
415811 | FGA15N120FTD | 1200V, 16A Campo Parada Trench IGBT | Fairchild Semiconductor |
415812 | FGA15S125P | 1250V, 15A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415813 | FGA180N33AT | IGBT discreto | Fairchild Semiconductor |
415814 | FGA180N33ATD | 330V PDP Trench IGBT | Fairchild Semiconductor |
415815 | FGA20N120FTD | 1200V, 20A, Campo Parada Trench IGBT | Fairchild Semiconductor |
415816 | FGA20S120M | 1200V, 20A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415817 | FGA20S125P | 1250V, 20A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415818 | FGA20S140P | 1400V, 20A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415819 | FGA25N120AN | Discreto, NPT IGBT | Fairchild Semiconductor |
415820 | FGA25N120AND | Copak IGBT Discreto | Fairchild Semiconductor |
415821 | FGA25N120ANDTU | Copak IGBT Discreto | Fairchild Semiconductor |
415822 | FGA25N120ANTD | Foso IGBT De 1200V NPT | Fairchild Semiconductor |
415823 | FGA25N120ANTDTU | 1200V, 25A, NPT Trench IGBT | Fairchild Semiconductor |
415824 | FGA25N120ANTU | Discreto, NPT IGBT | Fairchild Semiconductor |
415825 | FGA25N120FTD | 1200V, 25A Campo Parada Trench IGBT | Fairchild Semiconductor |
415826 | FGA25N12ANTD | Foso IGBT De 1200V NPT | Fairchild Semiconductor |
415827 | FGA25S125P | 1250V, 25A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415828 | FGA30N120FTD | 1200V, 30A, Campo Parada Trench IGBT | Fairchild Semiconductor |
415829 | FGA30N60LSD | 600V, 30A, PT IGBT | Fairchild Semiconductor |
415830 | FGA30N65SMD | 650V, 30A, Campo Parada IGBT | Fairchild Semiconductor |
415831 | FGA30S120P | 1300V, 30A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415832 | FGA40N60UFD | Ultrafast IGBT | Fairchild Semiconductor |
415833 | FGA40N60UFDTU | Ultrafast IGBT | Fairchild Semiconductor |
415834 | FGA40N65SMD | 650V, 40A, Campo Parada IGBT | Fairchild Semiconductor |
415835 | FGA50N100BNT | 1000V, 50A NPT Trench IGBT | Fairchild Semiconductor |
415836 | FGA50N100BNTD | 1000V, NPT Trench IGBT | Fairchild Semiconductor |
415837 | FGA50N100BNTD2 | 1000V, NPT Trench IGBT | Fairchild Semiconductor |
415838 | FGA50N60LS | El circuito discreto, corto clasificó IGBT con el diodo (voltaje bajo de la saturación) | Fairchild Semiconductor |
415839 | FGA50S110P | 1100V, 50A, IGBT-ánodo cortocircuito | Fairchild Semiconductor |
415840 | FGA60N60UFD | 600V, 60A, Campo Parada IGBT | Fairchild Semiconductor |
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