Nr. | Nome della parte | Descrizione | Fabbricatore |
6101 | HM51S4800CTT-6 | 60ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
6102 | HM51S4800CTT-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
6103 | HM51S4800CTT-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
6104 | HM51W16165 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6105 | HM51W16165J-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6106 | HM51W16165J-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6107 | HM51W16165J-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6108 | HM51W16165LJ-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6109 | HM51W16165LJ-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6110 | HM51W16165LJ-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6111 | HM51W16165LTT-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6112 | HM51W16165LTT-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6113 | HM51W16165LTT-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6114 | HM51W16165TT-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6115 | HM51W16165TT-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6116 | HM51W16165TT-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6117 | HM51W18165J-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6118 | HM51W18165J-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6119 | HM51W18165LJ-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6120 | HM51W18165LJ-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6121 | HM51W18165LJ-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6122 | HM51W18165LTT-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6123 | HM51W18165LTT-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6124 | HM51W18165LTT-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6125 | HM51W18165TT-5 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6126 | HM51W18165TT-6 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6127 | HM51W18165TT-7 | IL DRAM de EDO da 16 m. (1-Mword a 16 bit) 4 K Refresh/1 K rinfresca | Hitachi Semiconductor |
6128 | HM5212325F | interfaccia SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM di 128M LVTTL | Hitachi Semiconductor |
6129 | HM5212325F-B60 | interfaccia SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM di 128M LVTTL | Hitachi Semiconductor |
6130 | HM5212325FBP-B60 | 128M interfaccia LVTTL SDRAM 100 MHz, 1-Mword x 32 bit x 4-bank | Hitachi Semiconductor |
6131 | HM5212325FBPC | interfaccia SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM di 128M LVTTL | Hitachi Semiconductor |
6132 | HM5212325FBPC-B60 | interfaccia SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM di 128M LVTTL | Hitachi Semiconductor |
6133 | HM5225325F-B60 | interfaccia SDRAM 100 megahertz 1-Mword x x 64-bit 4-bank/2-Mword x x 32-bit 4-bank PC/100 SDRAM di 256M LVTTL | Hitachi Semiconductor |
6134 | HM5225645F | interfaccia SDRAM 100 megahertz 1-Mword x x 64-bit 4-bank/2-Mword x x 32-bit 4-bank PC/100 SDRAM di 256M LVTTL | Hitachi Semiconductor |
6135 | HM5225645F-B60 | interfaccia SDRAM 100 megahertz 1-Mword x x 64-bit 4-bank/2-Mword x x 32-bit 4-bank PC/100 SDRAM di 256M LVTTL | Hitachi Semiconductor |
6136 | HM5264165A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6137 | HM5264165B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6138 | HM5264165F | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6139 | HM5264165F-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6140 | HM5264165FLTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6141 | HM5264165FLTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6142 | HM5264165FLTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6143 | HM5264165FTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6144 | HM5264165FTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6145 | HM5264165FTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6146 | HM5264405F | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6147 | HM5264405FLTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6148 | HM5264405FLTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6149 | HM5264405FLTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6150 | HM5264405FTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6151 | HM5264405FTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6152 | HM5264405FTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6153 | HM5264805F | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6154 | HM5264805F-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6155 | HM5264805F-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6156 | HM5264805F-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6157 | HM5264805FLTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6158 | HM5264805FLTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6159 | HM5264805FLTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6160 | HM5264805FTT-75 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6161 | HM5264805FTT-A60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6162 | HM5264805FTT-B60 | interfaccia SDRAM 133 MHz/100 megahertz di 64M LVTTL | Hitachi Semiconductor |
6163 | HM530281 | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6164 | HM530281RTT-20 | 20ns; V (cc): da -1,0 a + 7,0 V; 1W; ; Memoria fiamma 331.776 parole x 8-bit | Hitachi Semiconductor |
6165 | HM530281RTT-25 | 25ns; V (cc): da -1,0 a + 7,0 V; 1W; ; Memoria fiamma 331.776 parole x 8-bit | Hitachi Semiconductor |
6166 | HM530281RTT-34 | 34ns; V (cc): da -1,0 a + 7,0 V; 1W; ; Memoria fiamma 331.776 parole x 8-bit | Hitachi Semiconductor |
6167 | HM530281RTT-45 | 45ns; V (cc): da -1,0 a + 7,0 V; 1W; ; Memoria fiamma 331.776 parole x 8-bit | Hitachi Semiconductor |
6168 | HM530281TT | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6169 | HM530281TT-20 | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6170 | HM530281TT-25 | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6171 | HM530281TT-34 | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6172 | HM530281TT-45 | 331.776 WORD X MEMORIA Della STRUTTURA Dei 8 BIT | Hitachi Semiconductor |
6173 | HM53051P-45 | 45ns; V (cc): da -1,0 a + 7,0 V; 1W; 262.144-parola di memoria fotogramma x 4-bit | Hitachi Semiconductor |
6174 | HM53051P-60 | 60ns; V (cc): da -1,0 a + 7,0 V; 1W; 262.144-parola di memoria fotogramma x 4-bit | Hitachi Semiconductor |
6175 | HM53461 | 65536 parola x RAM del video di Multiport CMOS dei 4 bit | Hitachi Semiconductor |
6176 | HM53461P-10 | 100ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6177 | HM53461P-12 | 120ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6178 | HM53461P-15 | 150ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6179 | HM53461ZP-10 | 100ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6180 | HM53461ZP-12 | 120ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6181 | HM53461ZP-15 | 150ns; V (cc): -0.5 a + 7.0V; 50mA; 1W; 65.536-parola x 4-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6182 | HM538123BJ-10 | 100ns; V (cc): -0.5 a + 7.0V; 1M VRAM (128 -kword x 8-bit) | Hitachi Semiconductor |
6183 | HM538123BJ-6 | 60ns; V (cc): -0.5 a + 7.0V; 1M VRAM (128 -kword x 8-bit) | Hitachi Semiconductor |
6184 | HM538123BJ-7 | 70ns; V (cc): -0.5 a + 7.0V; 1M VRAM (128 -kword x 8-bit) | Hitachi Semiconductor |
6185 | HM538123BJ-8 | 80ns; V (cc): -0.5 a + 7.0V; 1M VRAM (128 -kword x 8-bit) | Hitachi Semiconductor |
6186 | HM538253J-10 | 100ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6187 | HM538253J-7 | 70ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6188 | HM538253J-8 | 80ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6189 | HM538253RR-10 | 100ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6190 | HM538253RR-7 | 70ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6191 | HM538253RR-8 | 80ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6192 | HM538253TT-10 | 100ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6193 | HM538253TT-7 | 70ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6194 | HM538253TT-8 | 80ns; 1W; V (cc): -0.5 a + 7.0V; 262.144 parole x 8-bit CMOS multiporta RAM video | Hitachi Semiconductor |
6195 | HM6116 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
6196 | HM6116FP-2 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
6197 | HM6116FP-3 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
6198 | HM6116FP-4 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
6199 | HM6116LFP-2 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
6200 | HM6116LFP-3 | RAM Ad alta velocitą Di Elettricitą statica Di 2048-parole X 8bit Cmos | Hitachi Semiconductor |
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