Nr. | Nome da parte | Descrição | Fabricante |
201 | 2N6125 | Poder médio linear e aplicações do switching | Boca Semiconductor Corporation |
202 | 2N6126 | Poder médio linear e aplicações do switching | Boca Semiconductor Corporation |
203 | 2N6211 | TRANSISTOR DE PODER DE ALTA TENSÃO DE MEDIUM-POWER PNP | Boca Semiconductor Corporation |
204 | 2N6212 | TRANSISTOR DE PODER DE ALTA TENSÃO DE MEDIUM-POWER PNP | Boca Semiconductor Corporation |
205 | 2N6213 | TRANSISTOR DE PODER DE ALTA TENSÃO DE MEDIUM-POWER PNP | Boca Semiconductor Corporation |
206 | 2N6282 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
207 | 2N6283 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
208 | 2N6284 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
209 | 2N6285 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
210 | 2N6286 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
211 | 2N6287 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON COPLEMENTARY | Boca Semiconductor Corporation |
212 | 2N6288 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
213 | 2N6289 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
214 | 2N6290 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
215 | 2N6291 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
216 | 2N6292 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
217 | 2N6293 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
218 | 2N6298 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
219 | 2N6299 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
220 | 2N6300 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
221 | 2N6301 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
222 | 2N6312 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
223 | 2N6313 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
224 | 2N6314 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
225 | 2N6315 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
226 | 2N6316 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
227 | 2N6317 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
228 | 2N6318 | TRANSISTOR COMPLEMENTARES DO SILICONE MEDIUM-POWER | Boca Semiconductor Corporation |
229 | 2N6338 | TRANSISTOR DO SILICONE DE HIGH-POWER NPN | Boca Semiconductor Corporation |
230 | 2N6339 | TRANSISTOR DO SILICONE DE HIGH-POWER NPN | Boca Semiconductor Corporation |
231 | 2N6340 | TRANSISTOR DO SILICONE DE HIGH-POWER NPN | Boca Semiconductor Corporation |
232 | 2N6341 | TRANSISTOR DO SILICONE DE HIGH-POWER NPN | Boca Semiconductor Corporation |
233 | 2N6386 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
234 | 2N6387 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
235 | 2N6388 | TRANSISTOR DE PODER DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
236 | 2N6420 | TRANSISTOR DE PODER DE ALTA TENSÃO COMPLEMENTARES DE MEDIUM-POWER | Boca Semiconductor Corporation |
237 | 2N6421 | TRANSISTOR DE PODER DE ALTA TENSÃO COMPLEMENTARES DE MEDIUM-POWER | Boca Semiconductor Corporation |
238 | 2N6422 | TRANSISTOR DE PODER DE ALTA TENSÃO COMPLEMENTARES DE MEDIUM-POWER | Boca Semiconductor Corporation |
239 | 2N6423 | TRANSISTOR DE PODER DE ALTA TENSÃO COMPLEMENTARES DE MEDIUM-POWER | Boca Semiconductor Corporation |
240 | 2N6436 | TRANSISTOR DO SILICONE DE HIGH-POWER PNP | Boca Semiconductor Corporation |
241 | 2N6437 | TRANSISTOR DO SILICONE DE HIGH-POWER PNP | Boca Semiconductor Corporation |
242 | 2N6438 | TRANSISTOR DO SILICONE DE HIGH-POWER PNP | Boca Semiconductor Corporation |
243 | 2N6473 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
244 | 2N6474 | 130 V, epitaxial base NPN selicon versawatt transistor | Boca Semiconductor Corporation |
245 | 2N6475 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
246 | 2N6476 | Epitaxial-Base, silicone N-P-N e transistor de P-N-P VERSAWATT | Boca Semiconductor Corporation |
247 | 2N6486 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
248 | 2N6487 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
249 | 2N6488 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
250 | 2N6489 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
| | | |