Nr. | Nome da parte | Descrição | Fabricante |
47801 | 2N5633 | Dispositivo bipolar de NPN em um pacote hermetically selado do metal TO3 | SemeLAB |
47802 | 2N5633 | TRANSISTOR DE PODER DO SILICONE | Central Semiconductor |
47803 | 2N5634 | Dispositivo Bipolar de NPN | SemeLAB |
47804 | 2N5634 | TRANSISTOR DE PODER DO SILICONE | Central Semiconductor |
47805 | 2N5634 | Dispositivo Bipolar de NPN | SemeLAB |
47806 | 2N5634 | TRANSISTOR DE PODER DO SILICONE | Central Semiconductor |
47807 | 2N5638 | Interruptor Da N-Canaleta | Fairchild Semiconductor |
47808 | 2N5638 | Transistor Do Interruptor inversor de JFET | ON Semiconductor |
47809 | 2N5638 | Interruptor JFET N-channel | Intersil |
47810 | 2N5638-D | N-Canaleta Dos Transistor Do Interruptor inversor de JFET - Depletion | ON Semiconductor |
47811 | 2N5638RLRA | Transistor Do Interruptor inversor de JFET | ON Semiconductor |
47812 | 2N5638_D26Z | Interruptor Da N-Canaleta | Fairchild Semiconductor |
47813 | 2N5639 | Interruptor Da N-Canaleta | Fairchild Semiconductor |
47814 | 2N5639 | Transistor Do Interruptor inversor de JFET | ON Semiconductor |
47815 | 2N5639 | Interruptor JFET N-channel | Intersil |
47816 | 2N5639RLRA | Transistor Do Interruptor inversor de JFET | ON Semiconductor |
47817 | 2N5639_D26Z | Interruptor Da N-Canaleta | Fairchild Semiconductor |
47818 | 2N5639_D75Z | Interruptor Da N-Canaleta | Fairchild Semiconductor |
47819 | 2N5640 | N-Canaleta JFETs | Taitron Components |
47820 | 2N5640 | N-Canaleta JFETs | Taitron Components |
47821 | 2N5640 | Interruptor JFET N-channel | Intersil |
47822 | 2N5641 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47823 | 2N5641 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47824 | 2N5641 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 15W; VHF poder transistor | SGS Thomson Microelectronics |
47825 | 2N5642 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47826 | 2N5642 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47827 | 2N5642 | V (CEO): 35V; V (cb): 65V; V (eb): 4V; 3A; 30W; NPN RF potência silicone transistor | Motorola |
47828 | 2N5642 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 30W; VHF poder transistor | SGS Thomson Microelectronics |
47829 | 2N5643 | TRANSISTOR DE PODER DO RF DO SILICONE DE NPN | Advanced Semiconductor |
47830 | 2N5643 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47831 | 2N5643 | TRANSISTOR DE PODER DO RF DO SILICONE DE NPN | Advanced Semiconductor |
47832 | 2N5643 | 7W/20W/40W, 28V, TRANSISTOR DE PODER DO VHF | ST Microelectronics |
47833 | 2N5643 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 60W; VHF poder transistor | SGS Thomson Microelectronics |
47834 | 2N5655 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
47835 | 2N5655 | Transistor De Poder Plástico Da Elevado-Tensão Do Silicone de NPN | ON Semiconductor |
47836 | 2N5655-D | Transistor De Poder Plástico Da Elevado-Tensão Do Silicone de NPN | ON Semiconductor |
47837 | 2N5656 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
47838 | 2N5656 | SILICONE DOS TRANSISTOR DE PODER NPN | ON Semiconductor |
47839 | 2N5657 | TRANSISTOR DO SILICONE NPN | ST Microelectronics |
47840 | 2N5657 | TRANSISTOR DO SILICONE NPN | SGS Thomson Microelectronics |
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