Nr. | Nome da parte | Descrição | Fabricante |
48561 | 2N6288 | Epitaxial-base, silício NPN VERSAWATT transistor. 40V. | General Electric Solid State |
48562 | 2N6289 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
48563 | 2N6289 | Epitaxial-base, silício NPN VERSAWATT transistor. 40V. | General Electric Solid State |
48564 | 2N6290 | PODER TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
48565 | 2N6290 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
48566 | 2N6290 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
48567 | 2N6290 | 40.000W Médio Poder NPN plástico com chumbo Transistor. 50V VCEO, Ic 7.000A, 2 hFE. 2N6109 Complementar | Continental Device India Limited |
48568 | 2N6290 | Epitaxial-base, silício NPN VERSAWATT transistor. 60V. | General Electric Solid State |
48569 | 2N6291 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
48570 | 2N6291 | Epitaxial-base, silício NPN VERSAWATT transistor. 60V. | General Electric Solid State |
48571 | 2N6292 | PODER TRANSISTORS(7A, 40w) | MOSPEC Semiconductor |
48572 | 2N6292 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
48573 | 2N6292 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
48574 | 2N6292 | Poder 7A 70V NPN Discreto | ON Semiconductor |
48575 | 2N6292 | 40.000W Médio Poder NPN plástico com chumbo Transistor. 70V VCEO, Ic 7.000A, 2 hFE. | Continental Device India Limited |
48576 | 2N6292 | Epitaxial-base, silício NPN VERSAWATT transistor. 80V. | General Electric Solid State |
48577 | 2N6292 | Silicon plástico potência NPN transistor. Comutação e amplificador de aplicações de uso geral. VCEO = 70Vdc, Vcb = 80Vdc, o VEB = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. | USHA India LTD |
48578 | 2N6293 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
48579 | 2N6293 | Epitaxial-base, silício NPN VERSAWATT transistor. 80V. | General Electric Solid State |
48580 | 2N6294 | SILICONE COMPLEMENTAR DARLINGTONl | Central Semiconductor |
48581 | 2N6295 | SILICONE COMPLEMENTAR DARLINGTONl | Central Semiconductor |
48582 | 2N6295 | TRANSISTOR DE PODER COMPLEMENTAR DO SILICONE DE DARLINGTON | SemeLAB |
48583 | 2N6296 | SILICONE COMPLEMENTAR DARLINGTONl | Central Semiconductor |
48584 | 2N6296 | Dispositivo Bipolar de PNP | SemeLAB |
48585 | 2N6297 | SILICONE COMPLEMENTAR DARLINGTONl | Central Semiconductor |
48586 | 2N6298 | Transistor de PNP Darlington | Microsemi |
48587 | 2N6298 | PODER TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
48588 | 2N6298 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
48589 | 2N6298 | Transistor De Poder Leaded Darlington | Central Semiconductor |
48590 | 2N6299 | Transistor de PNP Darlington | Microsemi |
48591 | 2N6299 | PODER TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
48592 | 2N6299 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
48593 | 2N6299 | Transistor De Poder Leaded Darlington | Central Semiconductor |
48594 | 2N6300 | Transistor de NPN Darlington | Microsemi |
48595 | 2N6300 | PODER TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
48596 | 2N6300 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
48597 | 2N6300 | Transistor De Poder Leaded Darlington | Central Semiconductor |
48598 | 2N6301 | Transistor de NPN Darlington | Microsemi |
48599 | 2N6301 | PODER TRANSISTORS(8A, 75W) | MOSPEC Semiconductor |
48600 | 2N6301 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTON | Boca Semiconductor Corporation |
| | | |