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Folhas de dados encontradas :: 1351360Página: << | 1210 | 1211 | 1212 | 1213 | 1214 | 1215 | 1216 | 1217 | 1218 | 1219 | 1220 | >>
Nr.Nome da parteDescriçãoFabricante
485612N6288Epitaxial-base, silício NPN VERSAWATT transistor. 40V.General Electric Solid State
485622N6289EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATTBoca Semiconductor Corporation
485632N6289Epitaxial-base, silício NPN VERSAWATT transistor. 40V.General Electric Solid State
485642N6290PODER TRANSISTORS(7A, 40w)MOSPEC Semiconductor
485652N6290EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATTBoca Semiconductor Corporation
485662N6290Finalidade Geral Leaded De Transistor De PoderCentral Semiconductor
485672N629040.000W Médio Poder NPN plástico com chumbo Transistor. 50V VCEO, Ic 7.000A, 2 hFE. 2N6109 ComplementarContinental Device India Limited
485682N6290Epitaxial-base, silício NPN VERSAWATT transistor. 60V.General Electric Solid State
485692N6291EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATTBoca Semiconductor Corporation
485702N6291Epitaxial-base, silício NPN VERSAWATT transistor. 60V.General Electric Solid State
485712N6292PODER TRANSISTORS(7A, 40w)MOSPEC Semiconductor
485722N6292EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATTBoca Semiconductor Corporation
485732N6292Finalidade Geral Leaded De Transistor De PoderCentral Semiconductor
485742N6292Poder 7A 70V NPN DiscretoON Semiconductor
485752N629240.000W Médio Poder NPN plástico com chumbo Transistor. 70V VCEO, Ic 7.000A, 2 hFE.Continental Device India Limited
485762N6292Epitaxial-base, silício NPN VERSAWATT transistor. 80V.General Electric Solid State
485772N6292Silicon plástico potência NPN transistor. Comutação e amplificador de aplicações de uso geral. VCEO = 70Vdc, Vcb = 80Vdc, o VEB = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W.USHA India LTD
485782N6293EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATTBoca Semiconductor Corporation



485792N6293Epitaxial-base, silício NPN VERSAWATT transistor. 80V.General Electric Solid State
485802N6294SILICONE COMPLEMENTAR DARLINGTONlCentral Semiconductor
485812N6295SILICONE COMPLEMENTAR DARLINGTONlCentral Semiconductor
485822N6295TRANSISTOR DE PODER COMPLEMENTAR DO SILICONE DE DARLINGTONSemeLAB
485832N6296SILICONE COMPLEMENTAR DARLINGTONlCentral Semiconductor
485842N6296Dispositivo Bipolar de PNPSemeLAB
485852N6297SILICONE COMPLEMENTAR DARLINGTONlCentral Semiconductor
485862N6298Transistor de PNP DarlingtonMicrosemi
485872N6298PODER TRANSISTORS(8A, 75W)MOSPEC Semiconductor
485882N6298TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTONBoca Semiconductor Corporation
485892N6298Transistor De Poder Leaded DarlingtonCentral Semiconductor
485902N6299Transistor de PNP DarlingtonMicrosemi
485912N6299PODER TRANSISTORS(8A, 75W)MOSPEC Semiconductor
485922N6299TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTONBoca Semiconductor Corporation
485932N6299Transistor De Poder Leaded DarlingtonCentral Semiconductor
485942N6300Transistor de NPN DarlingtonMicrosemi
485952N6300PODER TRANSISTORS(8A, 75W)MOSPEC Semiconductor
485962N6300TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTONBoca Semiconductor Corporation
485972N6300Transistor De Poder Leaded DarlingtonCentral Semiconductor
485982N6301Transistor de NPN DarlingtonMicrosemi
485992N6301PODER TRANSISTORS(8A, 75W)MOSPEC Semiconductor
486002N6301TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE DE DARLINGTONBoca Semiconductor Corporation
Folhas de dados encontradas :: 1351360Página: << | 1210 | 1211 | 1212 | 1213 | 1214 | 1215 | 1216 | 1217 | 1218 | 1219 | 1220 | >>
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