| Nr. | Nome da parte | Descrição | Fabricante |
| 48841 | 2N6469 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48842 | 2N6469 | Epitaxial-base, PNP silício de alta potência transistor. -50V, 125W. | General Electric Solid State |
| 48843 | 2N6470 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48844 | 2N6471 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48845 | 2N6472 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48846 | 2N6473 | SWITCHING COMPLEMENTAR TRANSITORS DO SILICONE | Central Semiconductor |
| 48847 | 2N6473 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
| 48848 | 2N6473 | Epitaxial-base, silício NPN VERSAWATT transistor. 110V. | General Electric Solid State |
| 48849 | 2N6474 | SWITCHING COMPLEMENTAR TRANSITORS DO SILICONE | Central Semiconductor |
| 48850 | 2N6474 | 130 V, epitaxial base NPN selicon versawatt transistor | Boca Semiconductor Corporation |
| 48851 | 2N6474 | Epitaxial-base, silício NPN VERSAWATT transistor. 130V. | General Electric Solid State |
| 48852 | 2N6475 | SWITCHING COMPLEMENTAR TRANSITORS DO SILICONE | Central Semiconductor |
| 48853 | 2N6475 | EPITAXIAL-BASE, SILICONE N-P-N E TRANSISTOR DE P-N-P VERSAWATT | Boca Semiconductor Corporation |
| 48854 | 2N6475 | Epitaxial-base, silício PNP VERSAWATT transistor. -110V. | General Electric Solid State |
| 48855 | 2N6476 | SWITCHING COMPLEMENTAR TRANSITORS DO SILICONE | Central Semiconductor |
| 48856 | 2N6476 | Epitaxial-Base, silicone N-P-N e transistor de P-N-P VERSAWATT | Boca Semiconductor Corporation |
| 48857 | 2N6476 | Epitaxial-base, silício PNP VERSAWATT transistor. -130V. | General Electric Solid State |
| 48858 | 2N6477 | TRANSISTOR MÉDIOS DO SILICONE NPN DO PODER | General Electric Solid State |
| 48859 | 2N6477 | TRANSISTOR MÉDIOS DO SILICONE NPN DO PODER | General Electric Solid State |
| 48860 | 2N6478 | TRANSISTOR MÉDIOS DO SILICONE NPN DO PODER | General Electric Solid State |
| 48861 | 2N6478 | TRANSISTOR MÉDIOS DO SILICONE NPN DO PODER | General Electric Solid State |
| 48862 | 2N6486 | PODER TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48863 | 2N6486 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
| 48864 | 2N6486 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48865 | 2N6486 | 75.000W Médio Poder NPN plástico com chumbo Transistor. 40V VCEO, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48866 | 2N6486 | 15A, 75W, silício NPN epitaxial base VERSAWATT transistor. 50V. | General Electric Solid State |
| 48867 | 2N6487 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | ST Microelectronics |
| 48868 | 2N6487 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | SGS Thomson Microelectronics |
| 48869 | 2N6487 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | SGS Thomson Microelectronics |
| 48870 | 2N6487 | PODER TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48871 | 2N6487 | TRANSISTOR DE PODER PLÁSTICOS DE NPN/PNP | Boca Semiconductor Corporation |
| 48872 | 2N6487 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 48873 | 2N6487 | Poder 15A 80V NPN Discreto | ON Semiconductor |
| 48874 | 2N6487 | 75.000W Médio Poder NPN plástico com chumbo Transistor. 60V VCEO, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48875 | 2N6487 | 15A, 75W, silício NPN epitaxial base VERSAWATT transistor. 70V. | General Electric Solid State |
| 48876 | 2N6487-D | Transistor De Poder Plásticos 2N6487 Do Silicone Complementar | ON Semiconductor |
| 48877 | 2N6488 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | ST Microelectronics |
| 48878 | 2N6488 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | SGS Thomson Microelectronics |
| 48879 | 2N6488 | TRANSISTOR DE PODER COMPLEMENTARES DO SILICONE | SGS Thomson Microelectronics |
| 48880 | 2N6488 | PODER TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
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