| Nr. | Nome da parte | Descrição | Fabricante |
| 499361 | HM51S4800CLTT-6 | 60ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499362 | HM51S4800CLTT-7 | 70ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499363 | HM51S4800CLTT-8 | 80ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499364 | HM51S4800CTT-6 | 60ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499365 | HM51S4800CTT-7 | 70ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499366 | HM51S4800CTT-8 | 80ns; V (cc): -1 a + 7V; 50 mA; 1W; Memória de acesso aleatório 524.288 palavras x 8-bit dinâmica | Hitachi Semiconductor |
| 499367 | HM51W16165 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499368 | HM51W16165J-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499369 | HM51W16165J-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499370 | HM51W16165J-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499371 | HM51W16165LJ-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499372 | HM51W16165LJ-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499373 | HM51W16165LJ-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499374 | HM51W16165LTT-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499375 | HM51W16165LTT-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499376 | HM51W16165LTT-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499377 | HM51W16165TT-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499378 | HM51W16165TT-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499379 | HM51W16165TT-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499380 | HM51W18165J-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499381 | HM51W18165J-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499382 | HM51W18165LJ-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499383 | HM51W18165LJ-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499384 | HM51W18165LJ-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499385 | HM51W18165LTT-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499386 | HM51W18165LTT-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499387 | HM51W18165LTT-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499388 | HM51W18165TT-5 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499389 | HM51W18165TT-6 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499390 | HM51W18165TT-7 | O DRAM do EDO de 16 M (1-Mword 16-bit) 4 k Refresh/1 k refresca | Hitachi Semiconductor |
| 499391 | HM5212325F | relação SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM de 128M LVTTL | Hitachi Semiconductor |
| 499392 | HM5212325F-B60 | relação SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM de 128M LVTTL | Hitachi Semiconductor |
| 499393 | HM5212325FBP-B60 | 128M interface de LVTTL 100MHz SDRAM, 1-Mword x 32-bit x 4 banco | Hitachi Semiconductor |
| 499394 | HM5212325FBPC | relação SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM de 128M LVTTL | Hitachi Semiconductor |
| 499395 | HM5212325FBPC-B60 | relação SDRAM 100 megahertz 1-Mword x x 32-bit 4-bank PC/100 SDRAM de 128M LVTTL | Hitachi Semiconductor |
| 499396 | HM5216165TT-10H | SDRAM interface de 16 M LVTTL (512 kword × 16 bits × 2-banco), 100MHz | Elpida Memory |
| 499397 | HM5216165TT-12 | SDRAM interface de 16 M LVTTL (512 kword um 16-bit a 2 banco), 83MHz | Elpida Memory |
| 499398 | HM5225165B | relação SDRAM 133 MHz/100 megahertz 4-Mword de 256M LVTTL. 16-bit. 4-bank/8-Mword. 8-bit. 4-bank /16-Mword. 4-bit. 4-bank PC/133, PC/100 SDRAM | Elpida Memory |
| 499399 | HM5225165B-75 | relação SDRAM 133 MHz/100 megahertz 4-Mword de 256M LVTTL. 16-bit. 4-bank/8-Mword. 8-bit. 4-bank /16-Mword. 4-bit. 4-bank PC/133, PC/100 SDRAM | Elpida Memory |
| 499400 | HM5225165B-A6 | relação SDRAM 133 MHz/100 megahertz 4-Mword de 256M LVTTL. 16-bit. 4-bank/8-Mword. 8-bit. 4-bank /16-Mword. 4-bit. 4-bank PC/133, PC/100 SDRAM | Elpida Memory |
| | | |
