Nr. | Nome da parte | Descrição | Fabricante |
610521 | KM416RD8AD-RK80 | 256K x 16 x 32s bancos dependentes RDRAM direta. Tempo de acesso: 45 ns, velocidade: 800 Mbps (400 MHz). | Samsung Electronic |
610522 | KM416RD8AS | RDRAM Direto | Samsung Electronic |
610523 | KM416RD8AS-RBM80 | 128Mbit RDRAM 256K x 16 bancos 2*16 dependentes do bocado x dirigem RDRAMTM para o pacote do consumidor | Samsung Electronic |
610524 | KM416RD8AS-RM80 | 256K x 16 x 32s bancos dependentes para pacote consumidor. Tempo de acesso: 40 ns, velocidade: 800 Mbps (400 MHz). | Samsung Electronic |
610525 | KM416RD8AS-SCM80 | 128Mbit RDRAM 256K x 16 bancos 2*16 dependentes do bocado x dirigem RDRAMTM para o pacote do consumidor | Samsung Electronic |
610526 | KM416RD8AS-SM80 | 256K x 16 x 32s bancos dependentes para pacote consumidor. Tempo de acesso: 40 ns, velocidade: 800 Mbps (400 MHz). | Samsung Electronic |
610527 | KM416RD8C | 128/144Mbit RDRAM 256K x 16/18 os bancos dependentes do bocado x de 2*16 dirigem RDRAMTM | Samsung Electronic |
610528 | KM416RD8D | 128/144Mbit RDRAM 256K x 16/18 os bancos dependentes do bocado x de 2*16 dirigem RDRAMTM | Samsung Electronic |
610529 | KM416S1120D | 512K x 16bit x DRAM synchronous LVTTL de 2 bancos | etc |
610530 | KM416S1120DT-G/F10 | 512K x 16bit x DRAM synchronous LVTTL de 2 bancos | etc |
610531 | KM416S1120DT-G/F7 | 512K x 16bit x DRAM synchronous LVTTL de 2 bancos | etc |
610532 | KM416S1120DT-G/F8 | 512K x 16bit x DRAM synchronous LVTTL de 2 bancos | etc |
610533 | KM416S1120DT-G/FC | 512K x 16bit x DRAM synchronous LVTTL de 2 bancos | etc |
610534 | KM416S4030C | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610535 | KM416S4030CT-F10 | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610536 | KM416S4030CT-F7 | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610537 | KM416S4030CT-F8 | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610538 | KM416S4030CT-FH | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610539 | KM416S4030CT-FL | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610540 | KM416S4030CT-G | 1M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610541 | KM416S4030CT-G7 | 64Mbit (1M x 16bit x 4 Banks) bynchronous LVTTL DRAMA, 143MHz | Samsung Electronic |
610542 | KM416S4030CT-G8 | 64Mbit (1M x 16bit x 4 Banks) bynchronous LVTTL DRAMA, 125MHz | Samsung Electronic |
610543 | KM416S4030CT-GH | 64Mbit (1M x 16bit x 4 Banks) bynchronous LVTTL DRAMA, 100MHz | Samsung Electronic |
610544 | KM416S4030CT-GL | 64Mbit (1M x 16bit x 4 Banks) bynchronous LVTTL DRAMA, 100MHz | Samsung Electronic |
610545 | KM416S4030CT-L10 | 64Mbit (1M x 16bit x 4 Banks) bynchronous LVTTL DRAMA, 100MHz | Samsung Electronic |
610546 | KM416S8030 | 2M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610547 | KM416S8030B | 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610548 | KM416S8030BT-G/F10 | 128Mbit SDRAM 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610549 | KM416S8030BT-G/F8 | 128Mbit SDRAM 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610550 | KM416S8030BT-G/FA | 128Mbit SDRAM 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610551 | KM416S8030BT-G/FH | 128Mbit SDRAM 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610552 | KM416S8030BT-G/FL | 128Mbit SDRAM 2M x 16Bit x DRAM synchronous LVTTL de 4 bancos | Samsung Electronic |
610553 | KM416S8030T-G/F10 | 2M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610554 | KM416S8030T-G/F8 | 2M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610555 | KM416S8030T-G/FH | 2M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610556 | KM416S8030T-G/FL | 2M x 16Bit x DRAM synchronous de 4 bancos | Samsung Electronic |
610557 | KM416V1000B | RAM dinâmica do 1M x 16Bit CMOS com modalidade rápida da página | Samsung Electronic |
610558 | KM416V1000BJ-5 | 1M x RAM dinâmica 16Bit CMOS com o modo de página rápida, 3.3V, 50ns | Samsung Electronic |
610559 | KM416V1000BJ-6 | 1M x RAM dinâmica 16Bit CMOS com o modo de página rápida, 3.3V, 60ns | Samsung Electronic |
610560 | KM416V1000BJ-7 | 1M x RAM dinâmica 16Bit CMOS com o modo de página rápida, 3.3V, 70ns | Samsung Electronic |
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