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| Salto rápido a: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA |
| As folhas de dados encontraram :: 373 | 
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| Nr. | Nome da parte | Descrição | Fabricante |
| 151 | MT48LC4M4A1 | DRAM SYNCHRONOUS | Micron Technology |
| 152 | MT48LC4M4A1TGS | DRAM SYNCHRONOUS | Micron Technology |
| 153 | MT48LC4M4A2 | DRAM SYNCHRONOUS | Micron Technology |
| 154 | MT48LC64M4A2 | DRAM SYNCHRONOUS | Micron Technology |
| 155 | MT48LC64M8A2 | DRAM SYNCHRONOUS | Micron Technology |
| 156 | MT48LC64M8A2TG | DRAM SYNCHRONOUS | Micron Technology |
| 157 | MT48LC8M16A1TG | DRAM SYNCHRONOUS | Micron Technology |
| 158 | MT48LC8M16A2 | DRAM SYNCHRONOUS | Micron Technology |
| 159 | MT48LC8M16A2TG | DRAM SYNCHRONOUS | Micron Technology |
| 160 | MT48LC8M16A2TG-6A | DRAM SYNCHRONOUS | Micron Technology |
| 161 | MT48LC8M16LFFF | DRAM SYNCHRONOUS | Micron Technology |
| 162 | MT48LC8M32B2 | DRAM SYNCHRONOUS | Micron Technology |
| 163 | MT48LC8M32B2TG | DRAM SYNCHRONOUS | Micron Technology |
| 164 | MT48LC8M8A2 | DRAM SYNCHRONOUS | Micron Technology |
| 165 | MT48LC8M8A2TG | DRAM SYNCHRONOUS | Micron Technology |
| 166 | MT48V16M16LFFG | SDRAM MÓVEL | Micron Technology |
| 167 | MT48V4M32LFFC | DRAM SYNCHRONOUS | Micron Technology |
| 168 | MT48V8M16LFFF | DRAM SYNCHRONOUS | Micron Technology |
| 169 | MT49H16M16 | DRAM REDUZIDO RLDRAM DA LATÊNCIA | Micron Technology |
| 170 | MT49H16M16FM | DRAM REDUZIDO RLDRAM DA LATÊNCIA | Micron Technology |
| 171 | MT49H16M18 | Latência 288Mb Reduzida CIO | Micron Technology |
| 172 | MT49H16M18C | 288MB SIO REDUZIU LATENCY(RLDRAM II) | Micron Technology |
| 173 | MT49H16M18CFM-XX | 288MB SIO REDUZIU LATENCY(RLDRAM II) | Micron Technology |
| 174 | MT49H32M9 | Latência 288Mb Reduzida CIO | Micron Technology |
| 175 | MT49H32M9C | 288MB SIO REDUZIU LATENCY(RLDRAM II) | Micron Technology |
| 176 | MT49H32M9CFM-XX | 288MB SIO REDUZIU LATENCY(RLDRAM II) | Micron Technology |
| 177 | MT49H8M32 | DRAM REDUZIDO RLDRAM DA LATÊNCIA | Micron Technology |
| 178 | MT49H8M32FM | DRAM REDUZIDO RLDRAM DA LATÊNCIA | Micron Technology |
| 179 | MT49H8M36 | Latência 288Mb Reduzida CIO | Micron Technology |
| 180 | MT4C16256 | 256K x 16 DRAM (MT4C16256/7/8/9) | Micron Technology |
| 181 | MT4C16270 | DRAM 256K X 16 DRAM 5V/MODALIDADE PÁGINA Do EDO | Micron Technology |
| 182 | MT4C1M16C3 | DRAM DE FPM | Micron Technology |
| 183 | MT4C1M16C3DJ-6 | DRAM DE FPM | Micron Technology |
| 184 | MT4C1M16C3TG-6 | DRAM DE FPM | Micron Technology |
| 185 | MT4C1M16E5 | DRAM DO EDO | Micron Technology |
| 186 | MT4C1M16E5DJ-5 | DRAM DO EDO | Micron Technology |
| 187 | MT4C1M16E5DJ-6 | DRAM DO EDO | Micron Technology |
| 188 | MT4C1M16E5TG-5 | DRAM DO EDO | Micron Technology |
| 189 | MT4C1M16E5TG-6 | DRAM DO EDO | Micron Technology |
| 190 | MT4C4001 | o padrão ou o self refrescam | Micron Technology |
| 191 | MT4C4001J | 1MEG x 4DRAM | Micron Technology |
| 192 | MT4C4001J-6 | o padrão ou o self refrescam | Micron Technology |
| 193 | MT4C4001J-7 | o padrão ou o self refrescam | Micron Technology |
| 194 | MT4C4001J-8 | o padrão ou o self refrescam | Micron Technology |
| 195 | MT4C4001JDJ-6 | o padrão ou o self refrescam | Micron Technology |
| 196 | MT4C4001JL | 1MEG x 4DRAM | Micron Technology |
| 197 | MT4C4001JS | o padrão ou o self refrescam | Micron Technology |
| 198 | MT4C4001JS-6 | o padrão ou o self refrescam | Micron Technology |
| 199 | MT4C4001JS-7 | o padrão ou o self refrescam | Micron Technology |
| 200 | MT4C4001JS-8 | o padrão ou o self refrescam | Micron Technology |
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