| Nr. | Nom de partie | Description | Fabricant |
| 49521 | 2N7002 | TRANSISTOR À EFFET DE CHAMP de MODE de PERFECTIONNEMENT De N-canal | Panjit International Inc |
| 49522 | 2N7002 | Transistor à effet de champ De Mode De Perfectionnement De N-Canal | Chino-Excel Technology |
| 49523 | 2N7002 | FETS Verticaux Du Perfectionnement-Mode DMOS De N-Canal | Supertex Inc |
| 49524 | 2N7002 | N-canal 60V - 1,8 Ohms - 0.3Ä Sot23-3l - Transistor MOSFET De To-92 STripFET™II | ST Microelectronics |
| 49525 | 2N7002 | 60 V, 300 mA à canal N MOSFET Trench | NXP Semiconductors |
| 49526 | 2N7002 | Transistor à canal N. Drain-sourse tension 60 V. | Comchip Technology |
| 49527 | 2N7002 | 0.2W MOSFET de puissance, Vdss 60V 0.115A Id, 7.5Om Rds | SemiWell Semiconductor |
| 49528 | 2N7002(Z) | 60V SOT23 N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49529 | 2N7002-01 | TRANSISTOR À EFFET DE CHAMP de MODE de PERFECTIONNEMENT De N-canal | Diodes |
| 49530 | 2N7002-13-F | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49531 | 2N7002-7-02 | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49532 | 2N7002-7-F | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49533 | 2N7002-G | MOSFET, V DS = 60V, je d = 0,25 A, P D = 350mW | Comchip Technology |
| 49534 | 2N7002-HF | Halogène MOSFET gratuit, V DS = 60V, je d = 0,25 A, P D = 350mW | Comchip Technology |
| 49535 | 2N7002A | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49536 | 2N7002A-7 | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49537 | 2N7002AQ | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49538 | 2N7002AX | N-CANAL ENHANCEMENT MODE MOSFET | Diodes |
| 49539 | 2N7002BK | 60 V, 350 mA à canal N MOSFET Trench | NXP Semiconductors |
| 49540 | 2N7002BKM | 60 V, 450 mA à canal N MOSFET Trench | NXP Semiconductors |
| 49541 | 2N7002BKMB | 60 V, N-canal Trench MOSFET unique | NXP Semiconductors |
| 49542 | 2N7002BKS | 60 V, 300 mA double canal N MOSFET Trench | NXP Semiconductors |
| 49543 | 2N7002BKT | 60 V, 290 mA à canal N MOSFET Trench | NXP Semiconductors |
| 49544 | 2N7002BKV | 60 V, 340 mA double canal N MOSFET Trench | NXP Semiconductors |
| 49545 | 2N7002BKW | 60 V, 310 mA à canal N MOSFET Trench | NXP Semiconductors |
| 49546 | 2N7002CK | 60 V, 0,3 A à canal N MOSFET Trench | NXP Semiconductors |
| 49547 | 2N7002CSM | TRANSISTOR de MOS de MODE de PERFECTIONNEMENT De N-canal | SemeLAB |
| 49548 | 2N7002DW | TRANSISTORS MOSFET | Diodes |
| 49549 | 2N7002DW | N-Channel Enhancement Mode Effet champ Transistor | Fairchild Semiconductor |
| 49550 | 2N7002DW-7-F | DUAL N-CHANNEL MODE De PERFECTIONNEMENT MOSFET | Diodes |
| 49551 | 2N7002DWA | DUAL N-CHANNEL MODE De PERFECTIONNEMENT MOSFET | Diodes |
| 49552 | 2N7002DWA-13 | DUAL N-CHANNEL MODE De PERFECTIONNEMENT MOSFET | Diodes |
| 49553 | 2N7002DWA-7 | DUAL N-CHANNEL MODE De PERFECTIONNEMENT MOSFET | Diodes |
| 49554 | 2N7002E | FET De Niveau De Logique De TrenchMOS(tm) | Philips |
| 49555 | 2N7002E | Transistor MOSFET Du N-Canal 60-V | Vishay |
| 49556 | 2N7002E | TRANSISTORS MOSFET | Diodes |
| 49557 | 2N7002E | Petit MOSFET signal 60V 310mA 2,5 Ohm Single N-Channel SOT-23 | ON Semiconductor |
| 49558 | 2N7002E | N-canal niveau logique TrenchMOS FET | NXP Semiconductors |
| 49559 | 2N7002E | 60V; 0.25A; À canal N en mode enchanced transistor à effet de champ | SamHop Microelectronics Corp. |
| 49560 | 2N7002E | MOSFET petit signal | Panasonic |
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