| Nr. | Teilname | Beschreibung | Hersteller |
| 1184121 | T2300F | 2,5-A empfindlicher-Gate Silizium Triac. Max 3 mA Tor, Vdrom 50 V. | General Electric Solid State |
| 1184122 | T2300M | 2,5-A empfindlicher-Gate Silizium Triac. Max 3 mA Tor, Vdrom 600 V. | General Electric Solid State |
| 1184123 | T2300N | 2,5-A empfindlicher-Gate Silizium Triac. Max 3 mA Tor, Vdrom 800 V. | General Electric Solid State |
| 1184124 | T2301 | EMPFINDLICHE GATTER-SILIKON-TRIAC | General Electric Solid State |
| 1184125 | T2301A | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 100 V. | General Electric Solid State |
| 1184126 | T2301B | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 200 V. | General Electric Solid State |
| 1184127 | T2301D | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 400 V. | General Electric Solid State |
| 1184128 | T2301F | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 50 V. | General Electric Solid State |
| 1184129 | T2301M | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 600 V. | General Electric Solid State |
| 1184130 | T2301N | PHASE STEUERTHYRISTOREN | etc |
| 1184131 | T2301N | 2,5-A empfindlicher-Gate Silizium Triac. Max 4 mA Tor, Vdrom 800 V. | General Electric Solid State |
| 1184132 | T2302 | EMPFINDLICHE GATTER-SILIKON-TRIAC | General Electric Solid State |
| 1184133 | T2302A | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 100 V. | General Electric Solid State |
| 1184134 | T2302B | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 200 V. | General Electric Solid State |
| 1184135 | T2302D | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 400 V. | General Electric Solid State |
| 1184136 | T2302F | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 50 V. | General Electric Solid State |
| 1184137 | T2302M | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 600 V. | General Electric Solid State |
| 1184138 | T2302N | 2,5-A empfindlicher-Gate Silizium Triac. Max 10 mA Tor, Vdrom 800 V. | General Electric Solid State |
| 1184139 | T2316160A | 1024K x SCHNELLER SEITE MODUS DES DYNAMISCHEN RAM-16 | Taiwan Memory Technology |
| 1184140 | T2316160A | 4,5 bis 5,5 V; 1.2W; 1024K x 16 Dynamic RAM: Fast Page Mode | TM Technology |
| 1184141 | T2316160A-45 | 1024K x SCHNELLER SEITE MODUS DES DYNAMISCHEN RAM-16 | Taiwan Memory Technology |
| 1184142 | T2316160A-60 | 1024K x SCHNELLER SEITE MODUS DES DYNAMISCHEN RAM-16 | Taiwan Memory Technology |
| 1184143 | T2316162A | 1024K x DYNAMISCHER RAM16 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184144 | T2316162A | 4,5 bis 5,5 V; 1.2W; 1024K x 16 Dynamic RAM: EDO Seite Mode | TM Technology |
| 1184145 | T2316162A-45 | 1024K x DYNAMISCHER RAM16 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184146 | T2316162A-50 | 1024K x DYNAMISCHER RAM16 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184147 | T2316162A-60 | 1024K x DYNAMISCHER RAM16 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184148 | T2316405A | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184149 | T2316405A | 0,5 bis 4,6 V; 1.0W; 4M x 4 Dynamic RAM: EDO Seite Mode | TM Technology |
| 1184150 | T2316405A-10 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184151 | T2316405A-50 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184152 | T2316405A-60 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184153 | T2316405A-70 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184154 | T2316407A | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184155 | T2316407A | 0,5 bis 4,6 V; 1.0W; 4M x 4 Dynamic RAM: EDO Seite Mode | TM Technology |
| 1184156 | T2316407A-10 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184157 | T2316407A-50 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184158 | T2316407A-60 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184159 | T2316407A-70 | DYNAMISCHER RAM4M x 4 EDO-SEITE MODUS | Taiwan Memory Technology |
| 1184160 | T2320 | EMPFINDLICHE SILIKON-TRIAC DES GATTER-2.5-A | General Electric Solid State |
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