|   Erste Seite   |   Alle Hersteller   |   Durch Funktion   |   Inhaltsverzeichnis   |  

Teilnummer, Bezeichnung oder Hersteller enthalten:    
Schneller Sprung zu:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA  



Datenblaetter Gefunden :: 1351360Seite: << | 6238 | 6239 | 6240 | 6241 | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | >>
Nr.TeilnameBeschreibungHersteller
249681BC237BTFNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249682BC237BTFRNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249683BC237BUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249684BC237BZL1Transistor-Silikon NPNON Semiconductor
249685BC237CVerstärker-TransistorenMotorola
249686BC237CTransistor-Silikon-Plastik NPNON Semiconductor
249687BC237C0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380-800 hFEContinental Device India Limited
249688BC237CBUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249689BC237CTANPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249690BC237TFNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249691BC237TFRNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249692BC238Schaltung und Verstärker-AnwendungenFairchild Semiconductor
249693BC238Universeller TransistorKorea Electronics (KEC)
249694BC238Tranzystor krzemowy ma.ej mocy, ma.ej cz?otliwo.ciUltra CEMI
249695BC238Tranzystor ma.ej cz?otliwo.ci ma.ej mocyUltra CEMI
249696BC238NPN SILIKON-PLANARER EPITAXIAL- TRANSISTORMicro Electronics
249697BC2380.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120-800 hFEContinental Device India Limited
249698BC238Transistor. Schalt- und Verstärkeranwendungen. Kollektor-Basisspannung VCBO = 30V. Kollektor-Emitter-Spannung Vceo = 25V. Emitter-Basis-Spannung Vebo = 6V. Kollektor-Verlust Pc (max) = 500mW. Kollektorstrom Ic = 100mA.USHA India LTD



249699BC238ANPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249700BC238A0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120-220 hFEContinental Device India Limited
249701BC238ABUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249702BC238ATANPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249703BC238ATFNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249704BC238ATFRNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249705BC238BVerstärker-TransistorenMotorola
249706BC238B0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200-460 hFEContinental Device India Limited
249707BC238BBUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249708BC238BTANPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249709BC238BUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249710BC238CVerstärker-TransistorenMotorola
249711BC238C0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380-800 hFEContinental Device India Limited
249712BC238CVerstärker-Transistor NPNON Semiconductor
249713BC238CBUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249714BC238CTANPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249715BC238TARNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249716BC238TFNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249717BC238TFRNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
249718BC239Schaltung und Verstärker-AnwendungenFairchild Semiconductor
249719BC239Universeller TransistorKorea Electronics (KEC)
249720BC239Tranzystor ma.ej cz?otliwo.ci ma.ej mocyUltra CEMI
Datenblaetter Gefunden :: 1351360Seite: << | 6238 | 6239 | 6240 | 6241 | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | >>
English Version for this page Version française pour cette page Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian version Versiunea romaneasca



© 2024 - www.DatasheetCatalog.com