| Nr. | Teilname | Beschreibung | Hersteller |
| 47241 | 2N5249 | NPN SILIKON-TRANSISTOR | Micro Electronics |
| 47242 | 2N5249 | Planar epitaktischen passi NPN Silikon-Transistor. 50V, 100mA. | General Electric Solid State |
| 47243 | 2N5249A | Planar epitaktischen passi NPN Silikon-Transistor. 50V, 100mA. | General Electric Solid State |
| 47244 | 2N5252 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
| 47245 | 2N5253 | ZWEIPOLIGE NPN VORRICHTUNG IN Einem HERMETISCH SIEGELPAKET Des METALLTO39 | SemeLAB |
| 47246 | 2N5253 | ZWEIPOLIGE NPN VORRICHTUNG IN Einem HERMETISCH SIEGELPAKET Des METALLTO39 | SemeLAB |
| 47247 | 2N5262 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47248 | 2N5294 | NPN SILIKON-TRANSISTOR | Central Semiconductor |
| 47249 | 2N5294 | 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30-120 hFE. | Continental Device India Limited |
| 47250 | 2N5294 | Silikon-NPN-Transistor. 80V, 36W. | General Electric Solid State |
| 47251 | 2N5294 | Silicon plastik NPN-Transistor. Allzweck-Schalt- und Verstärkeranwendungen. Vceo = 70Vdc, Vcer = 75 VDC, VCBO = 80VDC VEB = 7VDC, Ic = 4Adc, Ib = 2 Adc, PD = 36W. | USHA India LTD |
| 47252 | 2N5296 | NPN SILIKON-TRANSISTOR | Central Semiconductor |
| 47253 | 2N5296 | 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30-120 hFE. | Continental Device India Limited |
| 47254 | 2N5296 | Silikon-NPN-Transistor. 60V, 36W. | General Electric Solid State |
| 47255 | 2N5296 | Silicon plastik NPN-Transistor. Allzweck-Schalt- und Verstärkeranwendungen. Vceo = 40Vdc, Vcer = 50VDC, VCBO = 60Vdc VEB = 5VDC, Ic = 4Adc, Ib = 2 Adc, PD = 36W. | USHA India LTD |
| 47256 | 2N5298 | NPN SILIKON-TRANSISTOR | Central Semiconductor |
| 47257 | 2N5298 | 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 47258 | 2N5298 | Silikon-NPN-Transistor. 80V, 36W. | General Electric Solid State |
| 47259 | 2N5301 | ENERGIE TRANSISTORS(200W) | MOSPEC Semiconductor |
| 47260 | 2N5301 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47261 | 2N5301 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 47262 | 2N5301 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit NPN-Leistungstransistor. 40V, 200W. | General Electric Solid State |
| 47263 | 2N5301 | 40 V, 30 A, 200 W, NPN Silizium-Leistungstransistor | Texas Instruments |
| 47264 | 2N5302 | NPN Transistor | Microsemi |
| 47265 | 2N5302 | NPN Transistor | Microsemi |
| 47266 | 2N5302 | ENERGIE TRANSISTORS(200W) | MOSPEC Semiconductor |
| 47267 | 2N5302 | NPN PLANARES ENDVERSTÄRKER-DC DES SILIKON-TRANSISTOR(AUDIO ZUM DC KONVERTER) | Wing Shing Computer Components |
| 47268 | 2N5302 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47269 | 2N5302 | Hoch-Energie NPN Silikon-Transistor | ON Semiconductor |
| 47270 | 2N5302 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit NPN-Leistungstransistor. 60V, 200W. | General Electric Solid State |
| 47271 | 2N5302 | 60 V, 30 A, 200 W, NPN Silizium-Leistungstransistor | Texas Instruments |
| 47272 | 2N5302-D | Hoch-Energie NPN Silikon-Transistor | ON Semiconductor |
| 47273 | 2N5303 | NPN Transistor | Microsemi |
| 47274 | 2N5303 | ENERGIE TRANSISTORS(200W) | MOSPEC Semiconductor |
| 47275 | 2N5303 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47276 | 2N5303 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 47277 | 2N5303 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit NPN-Leistungstransistor. 80V, 200W. | General Electric Solid State |
| 47278 | 2N5303 | 80 V, 30 A, 200 W, NPN Silizium-Leistungstransistor | Texas Instruments |
| 47279 | 2N5305 | TRANSISTOREN DES SILIKON-DARLINGTON | General Electric Solid State |
| 47280 | 2N5305 | TRANSISTOREN DES SILIKON-DARLINGTON | General Electric Solid State |
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